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Original Articles

Radiation F-center production in LiF at and above room temperature

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Pages 115-125 | Published online: 12 Sep 2006

References

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  • Sonder , E. and Sibley , W. A. 1972 . Point Defects in Solids , Edited by: Crawford , J. H. Jr. and Slifkin , L. F. New York : Plenum Press .
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  • We are immensely grateful to Robert Pohl of the Cornell University Physics Department and to Gerhard Schmidt and the Crystal Growth Laboratory of the Cornell Materials Science Center for making these specially prepared samples available
  • Ritz , V. H. and Cheek , C. H. 1965 . Radiation Research , 25 : 537
  • Kaufman , J. V. R. , Clark , C. D. , Nahum , J. and Wiegand , D. A. 1967 . Phys. Rev. , 154 : 817 have pointed out that there are a number of bands which absorb in the vicinity of 445nm. The main absorption, probably more than 80 per cent, is due to F 2 centers; much of the remainder is due to F 3 + centers. Since F 3 + centers appear to grow and F 2 + centers (which absorb at 645nm) decay slowly at room temperature to form more F 3 + centers, the shape, height and identity of the 445 nm absorption depends not only on the irradiation conditions but on time and temperature after cessation of the irradiation. Therefore the 445 nm band can be used only as an approximate indicator of F-aggregate center concentration
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  • Sample O1 was prepared from LiF for which the Li had been enriched to 99.99 per cent 7Li. We do not believe that increasing the 7Li content from 93 per cent (the natural percentage) can cause the change in coloration behavior
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  • Since free electrons are attracted to F + centers, all of these latter would immediately revert to F centers unless some of the electrons freed by the radiation were trapped elsewhere. To describe the details of the charge redistribution kinetics would be very complicated. The equations would depend on unknown parameters like trap depths, electron and hole mobilities, as well as ionization rate. However, under steady state conditions one would expect the number of F + centers to be approximately equal to the number of deep electron traps and not to depend strongly on dose rate
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