Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions

I. P. Akimchenko P. N. Lebedev Physics Institute of the USSR Academy of Sciences, Moscow, USSR

K. V. Kisseleva P. N. Lebedev Physics Institute of the USSR Academy of Sciences, Moscow, USSR

V. V. Krasnopevtsev P. N. Lebedev Physics Institute of the USSR Academy of Sciences, Moscow, USSR

A. G. Touryanski P. N. Lebedev Physics Institute of the USSR Academy of Sciences, Moscow, USSR

V. S. Vavilov P. N. Lebedev Physics Institute of the USSR Academy of Sciences, Moscow, USSR

References

Akimchenko , I. P. , Kisseleva , K. V. , Krasnopevtsev , V. V. Yu. , Milyutin , V. , Touryansky , A. G. and Vavilov , V. S. 1977 . Rad. Eff. , 33 : 75
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Konoplev , V. S. , Gippius , A. A. and Vavilov , V. S. 1976 . Rad. Eff., in Semiconductors , p. 244 Bristol and London : The Institute of Physics .
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Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions

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Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions

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