Fluence dependence of disorder depth profiles in Pb implanted Si

References

• Davies , J. A. , Denhartog , J. , Eriksson , L. and Mayer , J. W. 1967 . Can. J. Phys. , 45 : 4053
   Web of Science ®Google Scholar
• Mayer , J. W. , Eriksson , L. , Picraux , S. T. and Davies , J. A. 1968 . Can. J. Phys. , 46 : 663
   Web of Science ®Google Scholar
• Stein , H. J. , Vook , F. L. and Borders , J. A. 1969 . Appl. Phys. Lett. , 14 : 328
   Web of Science ®Google Scholar
• Stein , H. J. 1970 . Rad. Eff. , 6 : 19
   Google Scholar
• Brower , K. L. and Beezhold , W. 1972 . J. Appl. Phys. , 43 : 3499
   Web of Science ®Google Scholar
• Brower , K. L. , Vook , F. L. and Borders , J. A. 1969 . Appl. Phys. Lett. , 15 : 208
   Web of Science ®Google Scholar
• Hirvonen , J. K. , Brown , W. L. and Glotin , P. M. Proc. II Intn. Conf. on Ion Implantation . Edited by: Ruge and Graul . pp. 8 Springer-Verlag .
   Google Scholar
• Eisen , F. H. and Welch , B. Proc. European Conf. on Ion Implantation . pp. 227 Stevenage : Peter Peregrinus .
   Google Scholar
• Gibbons , J. F. 1972 . Proc. IEEE , 60 : 1062
   Web of Science ®Google Scholar
• Vook , F. L. 1973 . Radiation Damage and Defects in Semiconductors Edited by: Whitehead . 60 London Inst. Phys. Conf. Series No. 16
   Google Scholar
• Dennis , J. R. and Hale , E. B. 1978 . J. Appl. Phys. , 49 : 1119
   Web of Science ®Google Scholar
• Mazey , D. J. , Nelson , R. S. and Barnes , R. S. 1968 . Phil. Mag. , 17 : 1145
   Google Scholar
• Thompson , D. A. , Haugen , H. K. , Davies , J. A. and Howe , L. M. 1980 . Rad. Eff. , (to be published)
   Google Scholar
• Swanson , M. L. , Parsons , J. R. and Hoelke , C. W. 1971 . Radiation Effects in Semiconductors , Edited by: Corbett and Watkins . 359 London : Gordon Breach .
   Google Scholar
• Thompson , D. A. , Golanski , A. , Haugen , H. K. , Stevanovic , D. V. , Carter , G. and Christodoulides , C. E. 1980 . Rad. Eff. , (to be published)
   Google Scholar
• Carter , G. and Webb , R. 1979 . Rad. Eff. Lett. , 43 : 1
   Google Scholar
• Webb , R. and Carter , G. 1980 . Rad. Eff. , (to be published)
   Google Scholar
• Bøgh , E. , Hogeld , P. and Stensgaard , I. Proc. Ist int. Conf on Ion Implantation . Edited by: Chadderton and Eisen . pp. 51 London : Gordon and Breach .
   Google Scholar
• Bottiger , J. , Davies , J. A. , Morgan , D. V. , Whitton , J. L. and Winterbon , K. B. 1972 . Ion Implantation in Semiconductors and Other Materials , Edited by: Crowder . 599 New York : Plenum Press .
   Google Scholar
• Williams , J. S. 1978 . Nucl. Instrum. and Methods , 149 : 207
   Web of Science ®Google Scholar
• Kool , W. H. , Roosendaal , H. E. , Wiggers , L. W. and Saris , F. W. 1978 . Rad. Eff. , 36 : 41
   Web of Science ®Google Scholar
• Thompson , D. A. , Carter , G. , Haugen , H. K. and Stevanovic , D. V. 1980 . Rad. Eff. , to be published
   Google Scholar
• Eisen , F. H. 1973 . Channelling , Edited by: Morgan . 415 London : J. Wiley & Sons .
   Google Scholar
• Schmid , K. 1973 . Rad. Eff. , 17 : 201
   Google Scholar
• Ziegler , J. F. and Chu , W. K. 1974 . Atomic and Nuclear Data Tables , 13 : 463
   Google Scholar
• Carter , G. , Webb , R. and Collins , R. Rad. Eff. , 37 21
   Google Scholar
• Lindhard , J. , Scharff , M. E. and Schiott , H. E. 1963 . Mat. Fys. Medd. Dan. Vid. Selsk. , 33 ( 14 )
   Google Scholar
• Winterbon , K. B. , Sigmund , P. and Sanders , J. B. 1970 . Mat. Fys. Medd. Dan. Vid. Selsk. , 37 ( 14 )
   Google Scholar
• Winterbon , K. B. 1975 . Ion Implantation Range and Energy Deposition Distributions , Vol. 2 , New York : Plenum Press .
   Google Scholar
• Hsia , Y. Y. , Christodoulides , C. E. and Carter , G. 1978 . Rad. Eff. , 38 : 87
   Web of Science ®Google Scholar