References
- Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK. Two-dimensional atomic crystals. Proc Natl Acad Sci. 2005;102:10451–10453.
- Novoselov KS, Geim AK, Morozov SV, Jiang D, Katsnelson MI, Grigorieva IV, Dubonos SV, Firsov AA. Two-dimensional gas of massless Dirac fermions in graphene. Nature. 2005;438:197–200.
- Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol. 2012;7:699–712.
- Coleman JN, Lotya M, O'Neill A, Bergin SD, King PJ, Khan U, Young K, Gaucher A, De S, Smith RJ, Shvets IV, Arora SK, Stanton G, Kim H-Y, Lee K, Kim GT, Duesberg GS, Hallam T, Boland JJ, Wang JJ, Donegan JF, Grunlan JC, Moriarty G, Shmeliov A, Nicholls RJ, Perkins JM, Grieveson EM, Theuwissen K, DWComb Mc, Nellist PD, Nicolosi V. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science. 2011;331:568–571.
- Wu Y, Xiang J, Yang C, Lu W, Lieber CM. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature. 2004;430:61–65.
- Joensen P, Frindt RF, Morrison SR. Single-layer MoS2. Mater Res Bull. 1986;21:457–461.
- Yang D, Frindt RF. Li-intercalation and exfoliation of WS2. J Phys Chem Solids. 1996;57:1113–1116.
- Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Mishchenko A, Georgiou T, Katsnelson MI, Eaves L, Morozov SV, Peres NMR, Leist J, Geim AK, Novoselov KS, Ponomarenko LA. Field-effect tunneling transistor based on vertical graphene heterostructures. Science. 2012;335:947–950.
- Chhowalla M, Shin HS, Eda G, Li L-J, Loh KP, Zhang H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem. 2013;5:263–275.
- Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Lett. 2014;14:2039–2045.
- Pumera M, Sofer Z, Ambrosi A. Layered transition metal dichalcogenides for electrochemical energy generation and storage. J Mater Chem A. 2014;2:8981–8987.
- Yun WS, Han SW, Hong SC, Kim IG, Lee JD. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- semiconductors (Mo, W; S, Se, Te). Phys Rev B. 2012;85:033305-1–033305-5.
- Fuchtbauer HG, Tuxen AK, Moses PG, Topsoe H, Besenbacher F, Lauritsen JV. Morphology and atomic-scale structure of single-layer WS2 nanoclusters. Phys Chem Chem Phys. 2013;15:15971–15980.
- Ghorbani M-Asl, Zibouche N, Wahiduzzaman M, Oliveira AF, Kuc A, Heine T. Electromechanics in MoS2 and WS2: nanotubes vs. monolayers. Scientific Rep. 2013;3:2961-1–2961-8.
- Deepak FL, Esparza R, Borges B, Lopez-Lozano X, Jose-Yacaman M. Direct imaging and identification of individual dopant atoms in MoS2 and WS2 catalysts by aberration corrected scanning transmission electron microscopy. ACS Catalysis. 2011;1:537–543.
- Kreisel J, Noheda B, Dkhil B. Phase transitions and ferroelectrics: revival and the future in the field. Phase Transit. 2009;82:633–661.
- Andrushchak AS, Chernyhivsky EM, Gotra ZY, Kityk AV, Andrushchak NA, Maksymyuk TA, Mytsyk BG, Schranz W. Spatial anisotropy of the acousto-optical efficiency in lithium niobate crystals. J Appl Phys. 2010;108:103118-1–103118-5.
- Hagemann H, Filinchuk Y, Chernyshov D, van Beek W. Lattice anharmonicity and structural evolution of LiBH4: an insight from Raman and X-ray diffraction experiments. Phase Transit. 2009;82:344–355.
- Eng AYS, Ambrosi A, Sofer Z, Šimek P, Pumera M. Electrochemistry of transition metal dichalcogenides: strong dependence on the metal-to-chalcogen composition and exfoliation method. ACS Nano. 2014;12:12185–12198.
- Chia X, Ambrosi A, Sedmidubský D, Sofer Z, Pumera M. Precise tuning of the charge transfer kinetics and catalytic properties of MoS2 materials via electrochemical methods. Chem A Eur J. 2014;1:17426–17432.
- Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M. Coherent atomic and electronic heterostructures of single-layer MoS2. ACS Nano. 2012;6:7311–7317.
- Lin Y-C, Dumcenco DO, Huang Y-S, Suenaga K. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2. Nat Nanotechnol. 2014;9:391–396.
- Ou JZ, Chrimes AF, Wang Y, Tang S-Y, Strano MS, Kalantar-zadeh K. Ion-driven photoluminescence modulation of quasi-two-dimensional MoS2 nanoflakes for applications in biological systems. Nano Lett. 2014;14:857–863.
- Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Single-layer MoS2 transistors. Nat Nanotechnol. 2011;6:147–150.
- Fontana M, Deppe T, Boyd AK, Rinzan M, Liu AY, Paranjape M, Barbara P. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Scientific Rep. 2013;3:1634-1–1634-5.
- Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV, Kim Y-J, Gholinia A, Haigh SJ, Makarovsky O, Eaves L, Ponomarenko LA, Geim AK, Novoselov KS, Mishchenko A. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol. 2013;8:100–103.
- Li J, Wang L-W. First principle study of core/shell structure quantum dots. Appl Phys Lett. 2004;84:3648–3650.
- Zhang SB, Wei SH, Zunger A. Microscopic origin of the phenomenological equilibrium ‘Doping Limit Rule’ in n-type III-V semiconductors. Phys Rev Lett. 2000;84:1232–1235.
- Kavan L, Grätzel M, Gilbert SE, Klemenz C, Scheel HJ. Electrochemical and photoelectrochemical investigation of single-crystal anatase. J Am Chem Soc. 1996;118:6716–6723.
- Koma A. Van der Waals epitaxy for highly lattice-mismatched systems. J Crystal Growth. 1999;201:236–241.
- Kresse G, Furthmüller J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B. 1996;54:11169–11186.
- Blöchl PE. Projector augmented-wave method. Phys Rev B. 1994;50:17953–17979.
- Perdew JP, Burke K, Ernzerhof M. Generalized gradient approximation made simple. Phys Rev Lett. 1996;77:3865–3868.
- Heyd J, Scuseria GE, Ernzerhof M. Hybrid functionals based on a screened coulomb potential. J Chem Phys. 2003;118:8207–8215.
- Monkhorst HJ, Pack JD. Special points for Brillouin-zone integrations. Phys Rev B. 1976;13:5188–5192.
- Ataca C, Şahin H, Ciraci S. Single-layer MX2 transition metal oxides and dichalcogenides in a honeycomb-like structure. J Phys Chem C. 2012;116:8983–8999.
- Shi H, Pan H, Zhang Y-W, Yakobson BI. Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2. Phys Rev B. 2013;87:155304-1–155304-8.
- Molina-Sánchez A, Wirtz L. Phonons in single-layer and few-layer MoS2 and WS2. Phys Rev B. 2011;84:155413-1–155413-8.
- Marques MAL, Vidal J, Oliveira MJT, Reining L, Botti S. Density-based mixing parameter for hybrid functionals. Phys Rev B. 2011;83:035119-1–035119-5.
- Zhuang HL, Hennig RG. Computational search for single-layer transition-metal dichalcogenide photocatalysts. J Phys Chem C. 2013;117:20440–20445.
- Kuc A, Zibouche N, Heine T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys Rev B. 2011;83:245213-1–245213-4.
- Kang J, Tongay S, Zhou J, Li J, Wu J. Band offsets and heterostructures of two-dimensional semiconductors. Appl Phys Lett. 2013;102:012111-1–012111-4.