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Phase Transitions
A Multinational Journal
Volume 88, 2015 - Issue 9
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Original Articles

Light-induced metastable defects in a-Se90X10 (X = Sb, In and Ag) thin films

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Pages 939-949 | Received 03 Feb 2015, Accepted 16 Mar 2015, Published online: 17 Apr 2015

References

  • Lang DV, Cohen JD, Harbison JP. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy. Phys Rev B. 1982;25:5285–5320.
  • Snell AJ, MacKenzie KD, Le Comber PG, Spear WE. The metal–amorphous silicon barrier, interpretation of capacitance and conductance measurements. J Non Cryst Solids. 1980; 35–36:593–598.
  • Okushi H, Tokumaru Y, Yamasaki S, Oheda H, Tanaka K. Isothermal capacitance transient spectroscopy: its application to the study of gap states of a-Si:H. J Phys Colloques. 1981;42:C4-613–C4-616.
  • Spear WE, Le Comber PG. Investigation of the localised state distribution in amorphous Si films. J Non-Cryst Solids. 1972;8–10:727–738.
  • Lampert MA, Mark P. Current injection in solids. New York: Academic Press; 1970.
  • Braunlich P. Thermally stimulated relaxation in solids: topics in applied physics. Series 37ed. Heidelberg: Springer; 1979.
  • Goodman NB, Fritzsche H. Analysis of field-effect and capacitance-voltage measurements in amorphous-semiconductors. Philos Mag B. 1980;42:149–165.
  • El-Sayed SM. Space-charge-limited current, trap distribution and optical energy gap in amorphous (In13Se87 and In20Se80) thin films. Vacuum. 2002;65:177–184.
  • Sharma A, Barman PB. Effect of Bi incorporation on defect state density in a-Se85−xTe15Bix thin films. Physica B. 2009;404:1591–1594.
  • Brunst G, Weiser G. Deep electron traps in As2Se3 single crystals studied by photoconductivity and TSC measurements. Philos Mag B. 1985;52:843–856.
  • Street RA, Yoffe AD. Thermally stimulated conductivity in amorphous chalcogenides. Thin Solid Films. 1972;11:161–174.
  • Shimakawa K, Kondo A, Hayashi K, Akahori S, Kato T, Elliot SR. Photoinduced metastable defects in amorphous semiconductors: communality between hydrogenated amorphous silicon and chalcogenides. J Non-Cryst Solids. 1993;164:387–390.
  • Shimakawa K, Inami S, Kato T, Elliot SR. Origin of photoinduced metastable defects in amorphous chalcogenides. Phys Rev B. 1992;46:10062–10069.
  • Kamboj M, Mohammadi F. Steady state and transient photoconductivity measurements in a-Se90−xSb10Inx thin films. Thin Solid Films. 2009;518:1585–1589.
  • Abkowitz M. Relaxation induced changes in electrical behavior of glassy chalcogenide semiconductors. Polym Engg Sci. 1984;24:1149–1154
  • Simmons JG, Taylor GW. Nonequilibrium steady-state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps. Phys Rev B. 1971;4:502–511.
  • Simmons JG, Taylor GW, Tam MC. Thermally stimulated currents in semiconductors and insulators having arbitrary trap distributions. Phys Rev B. 1973;7:3714–3719.
  • Kumar D, Kumar S. Thermally stimulated currents in amorphous Se60Te20Ge20. J Opt Elec Adv Mater. 2004;6:413–420.
  • Kushwaha VS, Kumar D, Kumar A. Localized states in a-Se98Sb2 determined by thermally stimulated current measurements. J Opt Adv Mater. 2006;8:1356–1358.
  • Yadav S, Pal RK, Sharma SK, Kumar A. Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements. Physica B. 2009; 404:2225–2228.
  • Yadav S, Kumar D, Pal RK, Sharma SK, Kumar A. TSC measurements in a-Ge22Se78− xBix thin films. Physica B. 2010;405:4982–4985.
  • Manfredotti C, Murri R, Quirini A, Vasanelli L. Photoelectronic properties of n-GaSe. Phys Status Solidi (a). 1976;38:685–693.
  • Bube RH. Photoelectronic properties of semiconductors. Cambridge: Cambridge University Press; 1992.
  • Staebler DL, Wronski CR. Reversible conductivity changes in discharge-produced amorphous Si. Appl Phys Lett. 1977;31:292–294.
  • Biegelsen DK, Street RA. Photoinduced defects in chalcogenide glasses. Phys Rev Lett. 1980;44:803–806.
  • Redfield D, Bube RH. Photoinduced defects in semiconductors. Cambridge: Cambridge University Press; 1996.
  • Tanaka K. Photoexpansion in As2S3 glass. Phys Rev B. 1998;57:5163–5167.
  • Morigaki K. Physics of amorphous semiconductors. London: World Scientific; 1999.
  • Singh J, Shimakawa K. Advances in amorphous semiconductors. London: Taylor and Francis; 2003.
  • Elliott SR, Shimakawa K. Model for bond-breaking mechanisms in amorphous arsenic chalcogenides leading to light-induced electron-spin resonance. Phys Rev B. 1990;42:9766–9770.

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