Publication Cover
Phase Transitions
A Multinational Journal
Volume 93, 2020 - Issue 10-11
89
Views
3
CrossRef citations to date
0
Altmetric
Articles

Band structure and chemical bonding of GaP: pressure-induced effects

, , &
Pages 973-980 | Received 05 Jul 2020, Accepted 25 Aug 2020, Published online: 09 Sep 2020

References

  • Isshiki M, Wang J. Wide-bandgap II–VI semiconductors: growth and properties. In: S Kasap, P Capper, editor. Springer handbook of electronic and photonic materials. Cham: Springer; 2017.
  • Chow TP, Tyagi R. (1993). Wide bandgap compound Semiconductors for superior high-voltage power devices. Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, Monterey, CA, USA, 1993, pp. 84–88.
  • Bouarissa N. Pressure dependence of optoelectronic properties of GaN in the zinc-blende structure. Mater Chem Phys. 2002;73(1):51–56.
  • Lebedev AA, Chelnokov VE. Wide-gap semiconductors for high-power electronics. Semiconductors. 1999;33:999–1001.
  • Bouarissa N. Electron and positron energy levels and deformation potentials in group-III nitrides. Phys Stat Sol B. 2002;231(2):391–402.
  • Adachi S. Optical constants of crystalline and amorphous semiconductors, numerical data and graphical information. Springer. New York (US): Kluwer Academic Publishers; 1999.
  • Hellwege K-H, Madelung O, editors. . Numerical data and functional relationships in science and technology. In: Landolt-Bőrnstein, New Series, Group III. Berlin: Springer; 1982. p. 1–311.
  • Adachi S. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley-Interscience; 1992.
  • Václavik J, Vàpenka D. Gallium phosphide as a material for visible and infrared optics, EPJ Web of Conferences, 2013; 48: 00028 (4 pages).
  • Mujica A, Rubio A, Muñoz A, et al. High-pressure phases of group-IV, III-V, and II-VI compounds. Rev Mod Phys. 2003;75(3):863–912.
  • Manjón FJ, Errandonea D. Pressure-induced structural phase transitions in materials and earth sciences. Phys Stat Sol B. 2009;246(1):9–31.
  • Errandonea D, Manjón FJ. Pressure effects on the structural and electronic properties of ABX4 scintillating crystals. Prog Mater Sci. 2008;53(4):711–773.
  • Eremets MI. High pressure experimental methods. Oxford: Oxford University Press; 1996.
  • Hemley RJ, Mao HK, Struzhkin VV. Synchrotron radiation and high pressure: new light on materials under extreme conditions. J Synchrotron Radiat. 2005;12:135–154.
  • Nelmes RJ, McMahon MI. Chapter 3 Structural transitions in the group IV, III-V, and II-VI semiconductors under pressure. Semicond Semimetal. 1998;54:145–246.
  • McMahon MI, Nelmes RJ. New structural systematics in the II-VI, III-V, and group-IV semiconductors at high pressure. Phys Stat Sol B. 1996;198(1):389–402.
  • Yin MT, Cohen ML. Microscopic theory of the phase transformation and lattice dynamics of Si. Phys Rev Lett. 1980;45(12):1004–1007.
  • Payne MC, Teter MP, Alan DC, et al. Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients. Rev Mod Phys. 1992;64(4):1045–1097.
  • Saib S, Bouarissa N. Structural parameters and transition pressures of ZnO: ab-initio calculations. Phys Stat Sol B. 2007;244(3):1063–1069.
  • Boucenna M, Bouarissa N. Predicted electronic properties of GaAs under hydrostatic pressure. Mater Chem Phys. 2004;84(2-3):375–379.
  • Lukačević I, Kirin D. High-pressure phase transition in CdTe by a density functional lattice dynamics approach. Croat Chem Acta. 2010;83(1):15–19.
  • Bouarissa N. Electronic structure and lattice properties of zinc-blende InN under high pressure. Eur Phys J B. 2002;26:153–158.
  • Daoud S, Bouarissa N. Elastic, piezoelectric and thermal properties of zinc-blende AlN under pressure. Theor Chem Acc. 2019;138:49.
  • Elabsy AM, Degheidy AR, Abdelwahed HG, et al. Pressure response to electronic structures of bulk semiconductors at room temperature. Physica B. 2010;405(17):3709–3713.
  • Benmakhlouf F, Bechiri A, Bouarissa N. Zinc-blende ZnS under pressure: predicted electronic properties. Solid State Electron. 2003;47(8):1335–1338.
  • Cohen ML, Chelikowsky JR. Electronic structure and optical properties of semiconductors. Berlin: Springer-Verlag; 1989.
  • Harrison P. Quantum wells, wires and dots: theoretical and computational physics. Chichester: Wiley; 2000.
  • Kobayasi T, Nara H. Properties of nonlocal pseudopotentials of Si and Ge optimized under full interdependence among potential parameters. Bull Coll Med Sci Tohoku Univ. 1993;2(1):7–16.
  • Bechiri A, Bouarissa N. Energy band gaps for the GaxIn1-xAsyP1-y alloys lattice-matched to different substrates. Superlatt Microstruct. 2006;39(6):478–488.
  • Bouarissa N, Boucenna M. Band parameters for AlAs, InAs and their ternary mixed crystals. Phys Scr. 2009;79:015701.
  • Levinshtein M, Rumyantsev S, Shur M. Handbook series on semiconductor parameters. Singapore: World Scientific; 1999.
  • Bouarissa N. Electronic properties of GaxIn1-xP from pseudopotential calculations. Mater Chem Phys. 2010;124(1):336–341.
  • Tsay YF, Mitra SS, Bendow B. Pressure dependence of energy gaps and refractive indices of tetrahedrally bonded semiconductors. Phys Rev B. 1974;10(4):1476–1481.
  • Adachi S. Properties of group-IV, III-V, and II-VI semiconductors. Chichester: Wiley; 2005.
  • Bouarissa N, Saib S, Boucenna M, et al. Lattice properties, elastic parameters and microhardness of CdTe under hydrostatic compression. Comput Condens Matter. 2018;17:e00346.
  • Bouarissa N. Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs. Phys Lett A. 1998;245(3-4):285–291.
  • Bechiri A, Benmakhlouf F, Bouarissa N. Band structure of III-V ternary semiconductor alloys beyond the VCA. Mater Chem Phys. 2003;77(2):507–510.
  • Rode DL. Semiconductors and semimetals. In: RK Willardson, AC Beer, editor. Transport phenomena. New York: Academic Press; 1975, p. 1
  • Nakwaski W. Effective masses of electrons and heavy holes in GaAs, InAs, AlAs and their ternary compounds. Physica B. 1995;210(1):1–25.
  • Yeo YC, Chong TC, Li MF. Electronic band structures and effective-mass parameters of wurtzite GaN and InN. J Appl Phys. 1998;83(3):1429–1436.
  • Hannachi L, Bouarissa N. Band parameters for cadmium and zinc chalcogenide compounds. Physica B. 2009;404(20):3650–3654.
  • Kim K, Lambrecht WRL, Segall B, et al. Effective masses and valence-band splittings in GaN and AlN. Phys Rev B. 1997;56(12):7363–7375.
  • Persson C, da Silva A F, Ahuja R, et al. Effective electronic masses in wurtzite and zinc-blende GaN and AlN. J Cryst Growth. 2001;231(3):397–406.
  • Bouarissa N. Phonons and related crystal properties in indium phosphide under pressure. Physica B. 2011;406(13):2583–2587.
  • Bouarissa N. Effective masses of electrons, heavy holes and positrons in quasi-binary (GaSb)1-x(InAs)x crystals. J Phys Chem Sol. 2006;67(7):1440–1443.
  • Richardson SL, Cohen ML, Louie SG, et al. Electron charge densities at conduction-band edges of semiconductors. Phys Rev B. 1986;33(2):1177–1182.
  • Bouarissa N. Pseudopotential study of bonding and ionicity in InP at various pressures. Infrared Phys Technol. 1999;40(2):117–121.
  • Bouarissa N. Electron valence charge densities in Hg1-xCdxTe mixed crystals. Infrared Phys Technol. 1998;39(5):265–270.
  • Deĭbuk VG, Voznyĭ AV, Sletov MM. Band structure and spatial charge distribution in AlxGa1-xN. Semiconductors. 2000;34:35–39.
  • Wang CS, Klein BM. First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective masses. Phys Rev B. 1981;24(6):3393–3416.
  • Bouarissa N, Annane F. Electronic properties and elastic constants of the ordered Ge1-xSnx alloys. Mater Sci Eng B. 2002;95(2):100–106.
  • Bouarissa N. The behaviour of electron valence and conduction charge densities in InP under pressure. Mater Chem Phys. 2000;65(1):107–112.
  • Ackland GJ. High-pressure phases of group IV and III-V semiconductors. Rep Prog Phys. 2001;64:483–516.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.