Monolithic III-V light-emitting devices on Si substrates

References

• Fang , S. F. , Adomi , K. , Iyer , S. , Morkoc , H. , Zabel , H. , Choi , C. and Otsuka , N. 1990 . Gallium Arsenide and Other Compound Semiconductors on Silicon . J. Appl. Phys. , Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. Vol. 68 October : R31 – RS8 .
   Google Scholar
• Ohkubo , S. , Takai , K. , Takagi , N. , Miyagaki , S. , Eshita , T. and Takasaki , K. 1993 . New MOCVD Growth Technique for GaAs on Si with IC-Grade Surface,” Inst. Phys. Conf. Ser. No. 129, Inst. Phys. Publishing, Bristol and Philadelphia . : 187 – 192 .
   Google Scholar
• Suehiro , H. , Kuroda , S. , Miyata , T. , Ohori , T. and Takikawa , M. 1992 . InGaP/InGaAs/GaAs Pseudomorphic HEMT DCFL Circuits on Si Substrates . Extended Abstracts of the 1992 Intern. Conf. on Solid State Devices and Materials ,
   Google Scholar
• Tsukuba , Japan. August . August , 662 – 664 . Tokyo : Business Center for Academic Societies .
   Google Scholar
• Akiyama , M. , Ueda , T. and Onozawa , S. April 1988 . “ MOCVD Growth of GaAs on Si ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 116 , April , 79 – 89 . Pittsburgh : Material Research Society .
   Google Scholar
• Yamamoto , A. and Yamaguchi , M. April 1988 . “ Heterocpitaxy of GaAs, GaP and InP on Si by OMVPE and Their Application to Thin Film Solar Cells ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 116 , April , 285 – 296 . Pittsburgh : Material Research Society .
   Google Scholar
• Tachikawa , M. and Mori , H. 1990 . Dislocation Generation of GaAs on Si in the Cooling Stage . Appl. Phys. Lett. , 56 May : 2225 – 2227 .
   Google Scholar
• Wada , N. , Yoshimi , S. , Sakai , S. , Shao , C. L. and Fukui , M. 1992 . Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate . Jpn. J. Appl. Phys. , 31 February : L78 – L81 .
   Google Scholar
• Sakai , S. , Yoshimi , S. and Wada , N. LEOS Summer Topical Meeting Digest on Integrated Optoelectronics . “High-Efficiency Long Lifetime AlGaAs/GaAs Light Emitting Diodes on Si Substrates . Santa Barbara, CA. August , pp. 65 – 66 . New York : IEEE .
   Google Scholar
• Sugo , M. , Mori , H. , Itoh , Y. and Sakai , Y. August 1992 . “ InP-Based Devices on Si Substrates ” . In Extended Abstracts of the 1992 Internat. Conf. on Solid State Devices and Materials , Edited by: Tsukuba , Japan. August , 656 – 658 . Tokyo : Business Center for Academic Societies: .
   Google Scholar
• Fan , J. C. C. and Poate , J. M. April 1986 . “ Heteroepitaxy on Silicon ” . In Mat. Res. Soc. Sympos. Proc. , vol. 67 , April , Pittsburgh : Material Research Society .
   Google Scholar
• Fan , J. C. C. , Phillips , J. M. and Tsaur , B. Y. April 1987 . “ Heteroepitaxy on Silicon II ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 91 , April , Pittsburgh : Material Research Society .
   Google Scholar
• Choi , H. K. , Hull , R. , Ishiwara , H. and Nemanich , R. J. April 1988 . “ Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 116 , April , Pittsburgh : Material Research Society .
   Google Scholar
• Nissim , Y. I. and Rosencher , E. May 1988 . “ Heterostructures on Silicon: One Step Further with Silicon ” . In NATO ASI Ser. E , Vol. 160 , May , Dordrecht : Kluwer Academic Publishers .
   Google Scholar
• Sharan , S. and Narayan , J. 1989 . Strain Relief Mechanism and the Nature of Dislocations in GaAs/Si Heterostructures . J. Appl. Phys. , 66 September : 2376 – 2380 .
   Google Scholar
• Soga , T. , Imori , T. and Umeno , M. April 1987 . “ Heteroepitaxy of GaAs on Si by MOCVD ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 91 , April , 69 – 72 . Pittsburgh : Material Research Society .
   Google Scholar
• Yao , T. , Okada , Y. , Kawanami , H. , Mataui , S. , Imagawa , A. and Ishida , K. April 1987 . “ Residual Stress in GaAs Layer Grown on 4°-off (100) Si by MBE ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 91 , April , 63 – 68 . Pittsburgh : Material Research Society .
   Google Scholar
• Rosner , S. J. , Koch , S. M. and Harris , J. S. April 1987 . “ Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 91 , April , 155 – 160 . Pittsburgh : Material Research Society .
   Google Scholar
• Kamejima , T. , Ishida , K. and Matsui , J. 1977 . Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser . Jpn. J. Appl. Phys. , 16 February : 233 – 240 .
   Web of Science ®Google Scholar
• Hartman , R. L. and Hartman , A. R. 1973 . Strain-Induced Degradation of GaAs Injection Lasers . Appl. Phys. Lett. , 23 August : 147 – 149 .
   Google Scholar
• Choi , S. K. , Mihara , M. and Nimomiya , T. 1977 . Dislocation Velocities in GaAs . Jpn. J. Appl. Phys. , 16 May : 737 – 745 .
   Web of Science ®Google Scholar
• Nozawa , K. and Horikoshi , Y. 1991 . Low Threading Dislocation Density GaAs on Si (100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy . Jpn. J. Appl. Phys. , 30 April : L668 – L671 .
   Google Scholar
• Shimomura , H. , Okada , Y. and Kawabe , M. 1992 . Low Dislocation Density GaAs on Vicinal Si (100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation . Jpn. J. Appl. Phys. , 31 May : L628 – L631 .
   Google Scholar
• Sakai , S. 1987 . New Method to Relax Thermal Stress in GaAs Grown on Si Substrates . Appl. Phys. Lett. , 51 October : 1069 – 1071 .
   Google Scholar
• Feng , Z. and Liu , H. 1983 . Generalized Formula for Curvature Radius and Layer Stresses Caused by Thermal Strain in Semiconductor Multilayer Structures . J. Appl. Phys. , 54 January : 83 – 85 .
   Google Scholar
• Humphreys , T. P. , Miner , C. J. , Posthill , J. B. , Das , K. , Summerville , M. K. , Nemanich , R. J. , Sukow , C. A. and Parikh , N. R. 1989 . Heteroepitaxial Growth and Characterization of GaAs on Silicon-on-Sapphire and Sapphire Substrates . Appl. Phys. Lett. , 54 April : 1687 – 1689 .
   Google Scholar
• Yamaichi , E. , Ueda , T. , Yamagishi , C. and Akiyama , M. September 1992 . “ Change of Dislocation Density in GaAs on Si Covered with SiO2 II ” . In Extended Abstracts of the 53rd Autumn Meeting of the Japan Society of Applied Physics. , September , 304 Tokyo : Japanese Society of Applied Physics . Japanese
   Google Scholar
• Jacobi , B. G. , Zemon , S. , Norris , P. , Jagannath , C. and Sheldon , P. 1878 . Stress Variations Due to Microcracks in GaAs Grown on Si . Appl. Phys. Lett. , 51 December : 2236 – 2238 .
   Google Scholar
• Chand , N. J. P. , Ziel , van der , Weiner , J. S. , Sergent , A. M. , Cho , A. Y. and Grim , K. A. 1988 . Warpage of GaAs-on-Si Wafer and Its Reduction by Selective Growth of GaAs through a Silicon Shadow Mask by Molecular Beam Epitaxy . Appl. Phys. Lett. , 53 July : 225 – 227 .
   Google Scholar
• Yacobi , B. G. , Jagannath , C. , Zemon , S. and Sheldon , P. 1988 . Stress Variation and Relief in Patterned GaAs Grown on Mismatched Substrates . Appl. Phys. Lett. , 52 February : 555 – 557 .
   Google Scholar
• Sakai , S. , Chang , S. S. , Matyi , R. J. and Shichijo , H. April 1988 . “ Growth and Characterization of LPE GaAs on GaAs-Coated Si Prepared by MBE ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 116 , April , 155 – 160 . Pittsburgh : Material Research Society .
   Google Scholar
• Lee , H. P. , Huang , Y. H. , Liu , X. , Lin , H. , Smith , J. S. , Weber , E. R. , Wu , P. , Wang , S. and Weber , Z. L. April 1988 . “ The Photoluminescence and TEM Studies of Patterned GaAs Films on Si Substrate Grown by Molecular Beam Epitaxy ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 116 , April , 219 – 226 . Pittsburgh : Material Research Society .
   Google Scholar
• Suhir , E. April 1987 . “ Stresses in Multilayered Thin Films on a Thick Substrate ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 91 , April , 73 – 80 . Pittsburgh : Material Research Society .
   Google Scholar
• Sakai , S. , Kawasaki , K. and Wada , N. 1990 . Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates . Jpn. J. Appl. Phys. , 29 June : L853 – L855 .
   Google Scholar
• Sakai , S. , Kawasaki , K. and Wada , N. 1990 . Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate . Jpn. J. Appl. Phys. , 29 October : 2077 – 2081 .
   Google Scholar
• Kawasaki , K. , Sakai , S. , Wada , N. and Shintani , Y. 1990 . “ Geometrical Effects on the Thermal Stress in GaAs Layers Grown on Si Substrates ” . In Inst. Phys. Conf Ser. , Vol. no. 112 , 269 – 274 . Bristol and Philadelphia : Inst. Phys. Publishing .
   Google Scholar
• Wada , N. , Sakai , S. , Ueta , Y. and Kawasaki , K. April 1991 . “ Thermal Stress in Partially Separated GaAs Layers Grown Epitaxially on Si Substrates ” . In Mat. Res. Soc. Sympos. Proc. , Vol. 221 , April , 429 – 434 . Pittsburgh : Material Research Society .
   Google Scholar
• Sakai , S. , Wada , N. and Shao , C. L. 1991 . “ Thermal Annealing Effects on the Defect and Stress Reduction in Undercut GaAs on Si ” . In Inst. Phys. Conf. Ser. , Vol. 120 , 113 – 118 . Bristol and Philadelphia : Inst. Phys. Publishing .
   Google Scholar
• Wada , N. , Iwabu , K. , Sakai , S. and Fukui , M. 1992 . Photoluminescence-dark-spot-free AlGaAs Grown on Si Substrate . Appl. Phys. Lett. , 60 March : 1354 – 1356 .
   Google Scholar
• Sakai , S. , Shao , C. L. , Wada , N. , Yuasa , T. and Umeno , M. 1992 . Dislocation Reduction in the Annealed Undercut GaAs on Si . Appl. Phys. Lett. , 60 March : 1480 – 1482 .
   Google Scholar
• Wada , N. , Yoshimi , S. , Shigekane , M. , Sakai , S. , Shintani , Y. and Fukui , M. August 1992 . “ Low Defect Density Low Stress GaAs Grown on Undercut GaAs on Si ” . In Extended Abstracts of the 1992 Internat. Conf. on Solid State Devices and Materials , Edited by: Tsukuba , Japan. August , 650 – 652 . Tokyo : Business Center for Academic Societies: .
   Google Scholar
• Sakai , S. , Soga , T. , Takeyasu , M. and Umeno , M. 1985 . AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Superlattice Buffer Layers by MOCVD . Jpn. J. Appl. Pizys. , 24 August : L666 – 668 .
   Google Scholar
• Deppe , D. G. , Holonyak , N. , Nam , D. W. , Hsieh , K. C. , Jackson , G. S. , Matyi , R. J. , Shichijo , H. , Epler , J. E. and Chung , H. F. 1987 . Room-Temperature Continuous Operation of AlGaAs-GaAs Quantum Well Heterostructure Lasers Grown on Si . Appl. Phys. Lett. p-n , 51 August : 637 – 639 .
   Google Scholar
• Chen , H. , Paslaski , J. , Yariv , A. and Morkoc , H. 1988 . High-frequency Modulation of AlGaAs/GaAs Lasers Grown on Si Substrate by Molecular Beam Epitaxy . Appl. Phys. Lett. , 52 February : 605 – 606 .
   Google Scholar
• Choi , H. K. , Wang , C. A. and Fan , J. C. C. 1990 . Room-Temperature Continuous Operation of GaAs/AlGaAs Lasers Grown on Si by Organometallic Vapor-Phase Epitaxy . J. Appl. Phys. , 68 August : 1916 – 1917 .
   Google Scholar
• Egawa , T. , Tada , H. , Kobayashi , Y. , Soga , T. , Jimbo , T. and Umeno , M. 1990 . Low-Threshold Continuous-Wave Room-Temperature Operation of AlGaAs/GaAs Single Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition on Si Substrates with SiO2, Back Coating . Appl. Phys. Lett. , 57 September : 1179 – 1181 .
   Google Scholar
• Sakai , S. , Shiraishi , H. and Umeno , M. 1987 . AlGaAs/GaAs Stripe laser Diodes Fabricated on Si Substrates by MOCVD . IEEE J. Quantum Electron. , QE-23 June : 1080 – 1084 .
   Google Scholar
• Lee , H. P. , Liu , X. and Wang , S. 1990 . Double-Heterostructure GaAs/AlGaAs Lasers on Si Substrates with Reduced Threshold Current and Built-in Index Guiding by Selective-Area Molecular Beam Epitaxy . Appl. Phys. Lett. , 56 March : 1014 – 1016 .
   Google Scholar
• Liu , X. , Lee , H. P. and Wang , S. 1990 . Polarization Characteristics of AlGaAs/GaAs Double-Heterostructure Lasers Grown on Si Substrates . Appl. Phys. Lett. , 57 November : 1955 – 1957 .
   Google Scholar
• van der Ziel , J. P. and Chand , N. 1990 . Stress Reduction Resulting in Reduced Degradation in GaAs Lasers Grown on Si Substrates by Post Growth Patterning and SiO2 Layers . J. Appl. Phys. , 68 September : 2731 – 2734 .
   Google Scholar
• Choi , H. K. , Wang , C. A. and Karam , N. H. 1991 . GaAs-Based Diode Lasers on Si with Increased Lifetime Obtained by Using Strained InGaAs Active Layer . Appl. Phys. Lett. , 59 November : 2634 – 2635 .
   Google Scholar
• Egawa , T. , Yamamoto , K. , Jimbo , J. and Umeno , M. August 1992 . “ Monolithic Integration of Strain-Relieved AlGaAs/InGaAs Lasers and GaAs MESFET Grown on Si Using Selective Regrowth by MOCVD ” . In Extended Abstracts of the 1992 Internat. Conf. on Solid State Devices and Materials , Edited by: Tsukuba , Japan. August , 665 – 667 . Tokyo : Business Center for Academic Societies: .
   Google Scholar
• Wada , N. , Yoshimi , S. , Sakai , S. and Fukui , M. 1992 . Low Stress Low Dislocation Density AlGaAs/GaAs Laser Diodes Fabricated on Si Substrates . Conf. Digest 13th IEEE Internat. Semiconductor Laser Conf. , September : 54 – 55 . Takamatsu, Japan
   Google Scholar
• Razeghi , M. , Defour , M. , Blondeau , R. , Omnes , F. , Maurel , P. , Acher , O. , Brillouet , F. , Fan , J. C. C. and Salerno , J. 1988 . First cw Operation of a GaInAsP-InP Laser on a Silicon Substrate . Appl. Phys. Lett. , 53 December : 2389 – 2390 .
   Google Scholar