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Original Articles

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

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Pages 269-276 | Received 23 May 1996, Accepted 30 Oct 1996, Published online: 20 Aug 2006

References

  • Gopalakrishnan , G. K. , Bulmer , C. H. , Burns , W. K. , Mcelhanon , R. W. and Greenblatt , A. S. 1992 . 40 GHz, low half-wave voltage Ti:LiNbO3 intensity modulator . Electron. Lett. , 28 : 826 – 827 .
  • Miyamoto , H. , Ohta , H. , Tabuse , K. and Miyagawa , Y. 1992 . Design of high efficiency LiNbO3 broadband phase modulator using an electrode buried in buffer layer . Electron. Lett. , 28 : 322 – 324 .
  • Yi , J. C. 1990 . Finite element method for the impedance analysis of traveling-wave modulators . J. Lightwave Tech. , : 8
  • Wheeler , H. A. 1942 . Formulas for the skin effect . Proc. IRE , 30 : 412 – 424 .

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