Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part I

References

• Grove , W. R. 1852 . On the electro-chemical polarity of gases . Trans. Royal Soc. , 142 : 87
   Google Scholar
• Itoh , N. 1976 . Sputtering and dynamic interstitial motion in alkali halides . Nuclear Instrum. Methods , 132 : 201
   Web of Science ®Google Scholar
• Townsend , P. D. 1979 . Photon induced Sputtering . Surf: Sci. , 90 : 256
   Web of Science ®Google Scholar
• Townsend , P. D. , Browning , R. , Garlant , D. J. , Kelley , J. C. , Mahjoobi , A. , Michael , A. J. and Saidoh , M. 1976 . Sputtering patterns and defect formation in alkali halides . Rad. Eff. , 30 : 55
   Web of Science ®Google Scholar
• Overeijnderi , H. , Szymonak , M. , Haring , A. and de Vries , A. E. 1978 . Electron sputtering of alkali halides. A study of its dependence on the beam energy and the target temperature . Rad. Eff. , 38 : 21
   Google Scholar
• Szymonski , M. 1980 . On the model of the electron sputtering process of alkali halides . Rad. Eff. , 52 : 9
   Web of Science ®Google Scholar
• McCracken , G. M. 1975 . The behavior of surfaces under ion bombardment . Rep. Prog. Phys. , 28 : 241
   Web of Science ®Google Scholar
• Hagstrum , H. D. 1977 . “ Low energy de-excitation and neutralization processes near surfaces ” . In Inelastic Ion-Surface Collisions , Edited by: Talk , N. H. , Tully , J. C. , Heiland , W. and White , C. W. New York : Academic Press . chap. 1
   Google Scholar
• Petrov , N. N. 1960 . Secondary emission from incandescent metal bombarded by cesium and potassium ions . Sov. Phys. Sol. St. , 2 : 865
   Web of Science ®Google Scholar
• Wehner , G. 1966 . Energievertelilung der von 2, 5, 10 and 15 keV He- and Ar-lonen an Molybdän ausgelöten Eletronen . Z. Phys. , 193 : 439
   Google Scholar
• Kornelsen , E. V. 1964 . The ionic entrapment and thermal desorption of inert gases in tungsten for kinetic energies of 40 eV to 5 keV . Can. J. Phys. , 42 : 364
   Web of Science ®Google Scholar
• Carter , G. , Armour , D. G. , Donnelly , S. E. , Ingram , D. C. and Webb , R. P. 1980 . The injection of inert gas ions into solids: their trapping and escape . Rad. Eff. , 53 : 143
   Web of Science ®Google Scholar
• Oechsner , H. 1975 . Sputtering – A review of some recent experimental and theoretical aspects . Appl. Phys. , 8 : 185
   Web of Science ®Google Scholar
• Kornelsen , E. V. and Sinha , M. K. 1969 . Thermal release of inert gases from (110) and (211) tungsten surfaces . J. Appl. Phys. , 40 : 2888
   Web of Science ®Google Scholar
• Harrison , D. E. , Kelly , P. W. , Garrison , P. J. and Winograd , N. 1978 . Low energy ion impact phenomena on single crystal surfaces . Surf. Sci. , 76 : 311
   Web of Science ®Google Scholar
• Wehner , G. K. and Anderson , G. S. 1970 . “ The nature of physical sputtering ” . In Handbook of Thin Film Technology , Edited by: Maissel , li. and Glang , R. New York : McGraw-Hill . chap. 3
   Google Scholar
• Stuart , R. V. and Wehner , G. K. 1962 . Sputtering yields at very low bombarding ion energies . J. Appl. Phys , 33 : 2345
   Web of Science ®Google Scholar
• Sigmund , P. 1969 . Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets . Phys. Rev. , 184 : 383
   Web of Science ®Google Scholar
• Wehner , G. K. , Stuart , R. V. and Rosenburg , D. 1961 . General Mills Annual Report of Sputtering Yields, Number 2254
   Google Scholar
• Guseva , M. I. 1960 . The sputtering effect of positive ions with energies up to 25 keV in a small electromagnetic separator . Sov. Phys. Sol. St. , 1 : 1410
   Web of Science ®Google Scholar
• Almen , O. and Bruce , G. 1961 . Collection and sputtering experiments with noble gas ions . Nuclinstrum. Methods , 11 : 257
   Web of Science ®Google Scholar
• Dupp , G. and Schumann , A. 1966 . Die Zerstäubung von Kupfer durch Ne+–, Ar+–, Kr+– and Xe+ – Ionen im Energiebereich von 75 keV bis 1 MeV . Z. Physik , 192 : 284
   Web of Science ®Google Scholar
• Keywell , F. 1955 . Measurements and collision - radiation damage theory of high-vacuum sputtering . Phys. Rev. , 97 : 1611
   Web of Science ®Google Scholar
• Hous , M. and Robinson , M. T. 1979 . Computer simulation of low energy sputtering in the binary collision approximation . Appl. Phys. , 18 : 381 See, for example, and references therein
   Web of Science ®Google Scholar
• Winograd , N. , Garrison , J. , Fleisch , T. , Delgass , W. N. and Harrison , D. E. 1979 . Particle ejection from ion-bombarded clean and reacted single crystal surfaces . J. Vac. Sci. Technol. , 16 : 629 See for example
   Web of Science ®Google Scholar
• Sigmund , P. 1972 . Collision theory of displacement damage, ion ranges, and sputtering . Rev. Roum. Phys. , 17 : 832
   Google Scholar
• Sigmund , P. 1972 . Collision theory of displacement damage: displacement cascades . Rev. Roum. Phys. , 17 : 969
   Google Scholar
• Sigmund , P. 1972 . Collision theory of displacement damage: some aspects of sputtering . Rev. Roum. Phys. , 17 : 1079
   Google Scholar
• Winterbon , K. B. 1975 . Ion Implantation Range and Energy Deposition Distributions , Vol. 2 , New York : Plenum Press .
   Google Scholar
• Bay , H. L. and Bohdansky , J. 1979 . Sputtering yields for light ions as a function of angle of incidence . Appl. Phys. , 19 : 421
   Web of Science ®Google Scholar
• Sigmund , P. Proceedings of the Int. Conf on Atomic Collisions in Solids . Kiev
   Google Scholar
• Gurmin , B. M. , Ryzhov , Yu. A. and Skharban , I. I. 1969 . Angular distributions of atoms sputtering from polycrystalline targets by inert-gas ions . Bull. Acad. Sci. USSR, Phys. Ser. (USA) , 33 : 752
   Google Scholar
• Wehner , G. K. and Rosenberg , D. 1960 . Angular distribution of sputtered material . J. Appl. Phys. , 31 : 177
   Web of Science ®Google Scholar
• Patterson , H. and Tomlin , D. H. 1962 . Experiments by radioactive tracer methods on sputtering by rare-gas ions . Proc. Roy. Soc. , 265 : 474
   Google Scholar
• Littmark , U. and Sigmund , P. 1975 . Momentum deposition by heavy-ion bombardment and an Application to sputtering . J. Phys. D. , 8 : 241
   Web of Science ®Google Scholar
• Matsunami , N. , Yamamura , Y. , Itakawa , Y. , Itoh , N. , Kazumata , Y. , Miyagawa , S. , Morita , K. and Shimizu , R. 1980 . A semi-empirical formula for the energy dependence of the sputtering yield . Rad. Eff. Letters , 57 : 15
   Google Scholar
• Bohdansky , J. , Roth , J. and Bay , H. L. 1980 . An analytical formula and important parameters for low energy ion sputtering . J. Appl. Phys. , 52 : 2861
   Web of Science ®Google Scholar
• Stuart , R. V. and Wehner , G. K. 1960 . Sputtering thresholds and displacement energies . Phys. Rev. Lett. , 4 : 409
   Web of Science ®Google Scholar
• Husinsky , W. , Bruckmuller , R. , Blum , P. , Viehböck , F. , Hammer , D. and Benes , E. 1977 . Measurements of the velocity spectrum of sputtered Na from a Nal target by a Doppler-shift laser spectrometer . J. Appl. Phys. , 48 : 4734
   Web of Science ®Google Scholar
• Overeijnder , H. , Haring , A. and de Vries , A. E. 1978 . The sputtering processes of alkali halides during 6 keV Xe- ion bombardment . Rad. Eff. , 37 : 205
   Web of Science ®Google Scholar
• Husinsky , W. and Bruckmüller , R. 1979 . Energy spectra of sputtered Na atoms from bombardment of NaCl with 20 keV rare gas ions . Surf. Sci. , 80 : 637
   Web of Science ®Google Scholar
• Johson , R. E. and Evatt , R. 1980 . Thermal spikes and sputtering yields . Rad. Eff. , 52 : 187
   Google Scholar
• Thompson , D. A. Non-linear effects in sputtering . Proceedings of the Symposium on Sputtering . Edited by: Varga , P. , Betz , G. and Viehböck , F. P. pp. 62 Wein, , Austria : Inst. Allgemeine Physik, Technische Universität .
   Google Scholar
• Sigmund , P. 1980 . Sputtering of single and multiple component materials . J. Vac. Sci. Technol. , 17 : 396
   Web of Science ®Google Scholar
• Bay , H. L. , Andersen , H. H. , Hofer , W. O. and Nielsen , O. 1976 . The energy dependence of gold selfsputtering . Nuclinstrum. Methods , 132 : 301
   Web of Science ®Google Scholar
• Andersen , H. H. and Bay , H. L. 1975 . Heavy-ion sputtering yields of gold: further evidence of non-linear effects . J. Appl. Phys. , 46 : 2416
   Web of Science ®Google Scholar
• Andersen , H. H. and Bay , H. L. 1974 . Nonlinear effects in heavy-ion sputtering . J. Appl. Phys. , 45 : 953
   Web of Science ®Google Scholar
• Johar , S. S. and Thompson , D. A. 1979 . Spike effects in heavy-ion sputtering of Ag, Au, and Pt thin films . Surf. Sci. , 90 : 319
   Web of Science ®Google Scholar
• Oliva-Florio , A. R. , Alonson , E. V. , Baragiola , R. A. , Ferron , J. and Jakas , M. M. 1979 . Energy dependence of the molecular effect in sputtering . Rad Eff. Letters , 50 : 3
   Google Scholar
• Veje , E. 1981 . Emission of secondary electrons and photons from silver bombarded with Sb+, Sb2 +, and Sb3 + . Rad. Eff. Letters , 58 : 35
   Web of Science ®Google Scholar
• Thum , F. and Hofer , W. O. 1979 . No enhanced electron emission from high-density atomic collision cascades in metals . Surf Sci. , 90 : 331
   Web of Science ®Google Scholar
• Anderson , C. A. and Hinthorne , J. R. 1972 . Ion microprobe mass analyzer . Science , 175 : 853
   PubMed Web of Science ®Google Scholar
• Benninghoven , A. and Mueller , A. 1972 . Secondary ion yields near 1 for some chemical compounds . Phys. Letters , 40A : 169
   Google Scholar
• Werner , H. W. 1975 . The use of secondary ion mass spectrometry in surface analysis . Surf Sci. , 47 : 301
   Web of Science ®Google Scholar
• Benninghoven , A. 1975 . Developments in secondary ion mass spectroscopy and Applications to surface studies . Surf Sci. , 53 : 596
   Web of Science ®Google Scholar
• Williams , P. Materials Research Laboratory , University of Illinois . private communication
   Google Scholar
• Oechsner , H. and Gerhard , W. 1974 . Mass spectroscopy of sputtered neutrals and its Application for surface analysis . Surf Sci. , 44 : 480
   Web of Science ®Google Scholar
• Gerhard , W. and Oechsner , H. 1975 . Mass spectrometry of neutral molecules sputtered from polycrystalline metals by Ar+-ions of 100–1000 eV . Z. Physik , B22 : 41
   Web of Science ®Google Scholar
• Gerhard , W. 1975 . A model calculation of the neutral molecule emission by sputtering processes . Z. Physik. , B22 : 31
   Web of Science ®Google Scholar
• Winograd , N. , Harrison , D. E. Jr. and Garrison , B. J. 1978 . Structure sensitive factors in molecular cluster formation by ion bombardment of single crystal surfaces . Surf. Sci. , 78 : 467
   Web of Science ®Google Scholar
• Können , G. P. , Tip , A. and de Vries , A. E. 1974 . On the energy distribution of sputtered dimers . Radiat. Eff. , 21 : 269
   Web of Science ®Google Scholar
• Konnen , G. P. , Tip , A. and de Vries , A. E. 1975 . On the energy distribution of sputtered clusters . Radiat. Eff , 26 : 23
   Web of Science ®Google Scholar
• Garrison , B. J. , Winograd , N. and Harrison , D. E. Jr. 1978 . Formation of small metal clusters by ion bombardment of single crystal surfaces . J. Chem. Phys. , 69 : 1440
   Web of Science ®Google Scholar
• Prigge , S. and Bauer , E. Static SIMS studies of metal covered W(110) surfaces . Proc. 2nd Int. Conf. Secondary Ion Mass Spectrometry . Edited by: Benninghoven , A. , Evans , C. A. Jr. , Powel , R. A. , Shimizu , R. and Storms , H. A. pp. 133 New York : Springer-Verlag .
   Google Scholar
• Coburn , J. W. , Taglauer , E. and Kay , E. 1974 . a study of the neutral species of sputtered from oxide targets, I . Japn. J. Appl. Phys. , : 501
   Web of Science ®Google Scholar
• Gruen , D. M. , Guadioso , S. L. , McBeth , R. L. and Kerner , J. L. 1974 . Application of matrix isolation spectroscopy to quantitative sputtering studies. I. Energies and oscillator strengths of the resonance transitions of gold atoms isolated in noble gas matrices . J. Chem. Phys. , 60 : 89
   Web of Science ®Google Scholar
• Gruen , D. M. , Finn , P. A. and Page , D. L. 1976 . Vaporization thermodynamics and molecular sputtering of binary targets . Nucl. Technol. , 29 : 309
   Web of Science ®Google Scholar
• Steinbruchel , Ch. and Gruen , D. M. 1980 . Absolute measurement of sputtered ion fractions using matrix isolation spectroscopy . Surf Sci. , 93 : 299
   Web of Science ®Google Scholar
• Comas , J. and Cooper , C. B. 1967 . Mass spectrometric study of sputtering of single crystals of GaAs by low energy Ar ions . J. Appl. Phys. , 38 : 2956
   Web of Science ®Google Scholar
• Szymonski , M. and Bhattacharya . 1979 . The sputtering of GaAs at elevated temperatures . Appl. Phys. , 20 : 207
   Web of Science ®Google Scholar
• Stuart , R. V. , Wehner , G. K. and Andersen , G. S. 1969 . Energy distribution of atoms sputtered from polycrystalline metals . J. Appl. Phys. , 40 : 803
   Web of Science ®Google Scholar
• Oechsner , H. 1970 . Enerieverteilung bei der Festkorperzerstäubung durch lonenbeschuβ . Z. Physik , 238 : 433
   Web of Science ®Google Scholar
• Bernhardt , F. , Oechsner , H. and Stumpe , E. 1976 . Energy distributions of neutral atoms and molecules sputtered from polycrystalline silver . Nuc. Inst. Inst. Methods , 132 : 329
   Web of Science ®Google Scholar
• Gillam , E. 1959 . The penetration of positive ions of low energy into alloys and composition changes produced in them by sputtering . J. Phys. Chem. Solids , 11 : 55
   Web of Science ®Google Scholar
• Andersen , H. H. 1981 . “ Sputtering of multicomponent metals and semiconductors ” . In Symposium on the Physics of Ionized Gases 1980 , Edited by: Cobic , B. Beograd, , Yugoslavia : Boris Kidric Institute of Nuclear Sciences .
   Google Scholar
• Coburn , J. W. 1979 . The influence of ion sputtering on the elemental analysis of solid surfaces . Thin Solid Films , 64 : 371
   Web of Science ®Google Scholar
• Patterson , W. L. and Shirn , G. A. 1967 . The sputtering of nickel-chromium alloys . J. Vac. Sci. Technol. , 4 : 343
   Web of Science ®Google Scholar
• Shimizu , H. , Ono , M. and Nakayama , K. 1973 . Quantitative Auger analysis of copper-nickel alloy surfaces after argon ion bombardment . Surf. Sci. , 36 : 817
   Web of Science ®Google Scholar
• Ho , P. S. , Lewis , J. E. , Wildman , H. S. and Howard , J. K. 1976 . Auger study of preferred sputtering on binary alloy surfaces . Surf Sci. , 56 : 393
   Web of Science ®Google Scholar
• Winters , H. F. and Coburn , J. W. 1976 . Influence of the altered layer on depth profiling measurements . Appl. Phys. Letters , 28 : 176
   Web of Science ®Google Scholar
• Pickering , H. W. 1976 . Ion sputtering of alloys . J. Vac. Sci. Technol. , 13 : 618
   Web of Science ®Google Scholar
• Ho , P. S. 1978 . Effects of enhanced diffusion of preferred sputtering of homogeneous alloy surfaces . Surf Sci. , 72 : 253
   Web of Science ®Google Scholar
• Webb , R. , Carter , G. and Collins , R. 1978 . The influence of preferential enhanced diffusion on composition changes in sputtered binary solids . Rad. Effects , 39 : 129
   Web of Science ®Google Scholar
• Lam , N. Q. , Leaf , G. K. and Wiedersich , H. 1980 . Sputter-induced surface composition changes in alloys . J. Nuc. Mat. , 88 : 289
   Web of Science ®Google Scholar
• Eltoukhy , A. H. and Greene , J. E. 1980 . Diffusion enhancement due to low-energy ion bombardment during sputter etching and deposition . J. Appl. Phys. , 51 : 4444
   Web of Science ®Google Scholar
• Greene , J. E. , Natarjan , B. R. and Sequeda-Osorio , F. 1978 . Sputtering of metal alloys containing second phase precipitates . J. Appl. Phys. , 49 : 417
   Web of Science ®Google Scholar
• Andersen , N. and Sigmund , P. 1974 . Energy dissipation by heavy ions in compound targets . K. Dan, Vidensk, Selsk, Mat. Fys. Medd. , 39 ( 3 ) : 1 See also reference 75
   Google Scholar
• Liau , Z. L. , Brown , W. L. , Homer , R. and Poate , J. M. 1977 . Surface-layer composition changes in sputtered alloys and compounds . Appl. Phys. Letters , 30 : 626
   Web of Science ®Google Scholar
• Tarng , M. L. and Wehner , G. K. 1971 . Alloy sputtering studies with in-situ Auger electron spectroscopy . J. Appl. Phys. , 42 : 2449
   Web of Science ®Google Scholar
• Taglauer , E. and Heiland , W. 1980 . “ Changes in the surface composition of compounds due to light ion bombardment ” . In Symposium on Sputtering , Edited by: Varga , P. , Betz , G. and Viehböck , F. P. 423 Vienna : Inst. Allegemein, Physik .
   Google Scholar
• Sigmund , P. 1977 . “ Sputtering processes: collision cascades and spikes ” . In Inelastic Ion-Surface Collisions , Edited by: Tolk , N. H. , Tully , J. C. , Heiland , W. and White , C. W. 121 New York : Academic Press .
   Google Scholar
• Sigmund , P. “ Sputtering by ion bombardment ” . In Topics in Applied Physics , Edited by: Behrisch , R. Vol. 47 , Springer . in press
   Google Scholar
• Russell , W. A. , Papanastassiou , D. A. and Tombrello , T. A. 1980 . Kellogg Rad. Lab. Report BAP-19, (See also reference 75.)
   Google Scholar
• van Oostrom , A. 1976 . Application of AES to the study of selective sputtering of thin films . J. Vac. Sci. Technol. , 13 : 224
   Web of Science ®Google Scholar
• Jacobi , K. and Ranke , W. 1976 . Oxidation and annealing of GaPand GaAs (III) faces studied by AES and UPS . J. Electron. Spectros. Rel. Phen. , 8 : 225
   Web of Science ®Google Scholar
• Singer , I. L. , Murday , J. S. and Comas , J. 1981 . Preferential sputtering from disordered GaAs . J. Vac. Sci. Technol. , 18 : 161
   Web of Science ®Google Scholar
• Mizokawa , Y. , Iwasaka , H. , Nishitani , R. and Nakamura , S. 1978 . ESCA studies of Ga, As, GaAs, Ga2O3, and As2O5 . J. Electron. Spectros. Rel. Phen. , 14 : 129
   Web of Science ®Google Scholar
• McGuire , G. E. 1978 . Effects of ion sputtering on semiconductor surfaces . Surf Sci. , 76 : 130
   Web of Science ®Google Scholar
• Singer , J. L. , Murday , J. S. and Cooper , L. R. 1978 . Abstract: Composition changes in GaAs due to low energy ion bombardment . J. Vac. Sci. Technol. , 15 : 127
   Web of Science ®Google Scholar
• Eltoukhy , A. H. , Barnett , S. A. and Greene , J. E. 1979 . Ion bombardment effects on elemental incorporation probabilities during sputter deposition of GaSb and InSb . J. Vac. Sci. Technol. , 16 : 321
   Web of Science ®Google Scholar
• Zilko , J. L. , Barnett , S. A. , Eltoukhy , A. H. and Greene , J. E. 1980 . Modification of elemental incorporation probabilities by ion bombardment during growth of III-V compound and metastable films . J. Vac. Sci. Technol. , 17 : 595
   Web of Science ®Google Scholar
• Stewart , A. D. G. and Thompson , M. W. 1969 . Microtopography of surfaces eroded by ion-bombardment . J. Materials Sci. , 4 : 56
   Web of Science ®Google Scholar
• Barber , D. J. , Frank , F. C. , Moss , M. , Steeds , J. W. and Tsong , I. S. T. 1973 . Prediction of ion-bombardment surface topographies using Frank's kinematic theory of crystal dissolution . J. Materials Sci. , 8 : 1030
   Web of Science ®Google Scholar
• Frank , F. C. 1958 . “ On the kinematic theory of crystal growth and dissolution processes ” . In Growth and Perfection of Crystals , Edited by: Doremus , R. H. , Roberts , B. W. and Turnbull , D. 411 Wiley .
   Google Scholar
• Carter , G. , Colligon , J. S. and Nobes , M. J. 1977 . Analytical modelling of sputter induced surface morphology . Rad. Eff. , 21 : 65
   Google Scholar
• Belson , J. and Wilson , I. H. 1980 . Flux density equations for topographical evolution of features on ion bombarded surfaces . Rad. Eff. , 51 : 27
   Web of Science ®Google Scholar
• Wilson , I. H. 1973 . The topography of sputtered semiconductors . Rad. Eff. , 18 : 95
   Google Scholar
• Altstetter , C. J. and Tortorelli , P. F. 1976 . Argon ion surface erosion of niobium . J. Nucl. Materials , 63 : 235 See, for example, and references therein
   Web of Science ®Google Scholar
• Barnett , S. A. , Bajor , G. and Greene , J. E. 1980 . Growth of high quality epitaxial GaAs films by sputter deposition . Appl. Phys. Letters , 37 : 734
   Web of Science ®Google Scholar
• Vossen , J. L. 1971 . Contamination in films sputtered from hot-pressed targets . J. Vac. Sci. Technol. , 8 : 751
   Web of Science ®Google Scholar
• Gulbransen , E. A. and Andrew , K. F. 1949 . Kinetics of the reactions of titanium with O2, N2, and H2 . AIME Trans. , 185 : 741
   Google Scholar
• Kyle , M. L. , Pierce , R. D. , Coleman , L. F. and Arntzen , J. D. 1968 . Removal of N2 from Ar with a titanium metal sponge . Ind. Engr. Chem. Process Design , 7 : 447
   Web of Science ®Google Scholar
• Gibbs , D. S. , Svec , H. J. and Harrington , R. E. 1956 . Purification of the rare gases . Ind. Engr. Chem. , 48 : 289
   Web of Science ®Google Scholar
• Maissel , li. 1966 . “ The deposition of thin films by cathode sputtering ” . In Physics of Thin Films , Edited by: Hass , G. and Thun , R. E. Vol. 3 , 61 New York : Academic Press .
   Google Scholar
• Maissel , li. 1970 . “ Application of sputtering to the deposition of films ” . In Handbook of Thin Film Technology , Edited by: Maissel , li. and Glang , R. New York : Mc-Graw Hill . chap. 4
   Google Scholar
• Vossen , J. L. 1971 . Control of film properties by rf sputtering techniques . J. Vac. Sci. Technol. , 8 : S12
   Web of Science ®Google Scholar
• Vossen , J. L. and Cuomo , J. J. 1978 . “ Glow discharge sputter deposition ” . In Thin Film Processes , Edited by: Vossen , J. L. and Kern , W. 11 New York : Academic Press .
   Google Scholar
• Chapman , B. 1980 . Glow Discharge Processes , New York : John Wiley and Sons .
   Google Scholar
• Harper , J. M. E. 1978 . “ Ion beam deposition ” . In Thin Film Processes , Edited by: Vossen , J. L. and Kern , W. 175 New York : Academic Press .
   Google Scholar
• Davis , W. D. and Vanderslice , T. A. 1963 . Ion energies at the cathode of a glow discharge . Phys. Rev. , 131 : 219
   Web of Science ®Google Scholar
• Houston , J. E. and Uhl , J. E. 1971 . A characterization of the ionic species incident on the cathode in a glow discharge Sandia Report Sc-RR-71–0122
   Google Scholar
• Tsui , R. T. C. 1968 . Calculation of ion bombarding energy and its distribution in rf sputtering . Phys. Rev. , 168 : 107
   Web of Science ®Google Scholar
• Koenig , H. R. and Maissel , li. 1970 . Application of rf discharges to sputtering . IBM J. Res. Dev. , 14 : 168
   Web of Science ®Google Scholar
• Coburn , J. W. and Kay , E. 1972 . Positive-ion bombardment of substrates in rf diode glow discharge sputtering . J. Appl. Phys. , 43 : 4965
   Web of Science ®Google Scholar
• Westwood , W. D. and Boynton , R. J. 1973 . Analysis of sputtering discharge by optical and mass spectrometry. I. Platinum and tantalum sputtered in argon . J. Appl. Phys. , 44 : 2610
   Web of Science ®Google Scholar
• Westwood , W. D. 1973 . Analysis of sputtering discharge by optical and mass spectrometry. II. Platinum and tantalum sputtered in argon/nitrogen mixtures . J. Appl. Phys. , 44 : 2419
   Web of Science ®Google Scholar
• Greene , J. E. , Sequede-Osorio , F. and Natarajan , B. R. 1975 . Glow discharge optical spectroscopy for microvolume elemental analysis . J. Appl. Phys. , 46 : 2701
   Web of Science ®Google Scholar
• Greene , J. E. 1978 . Optical spectroscopy for diagnostics and process control during glow discharge . J. Vac. Sci. Technol. , 15 : 1718
   Web of Science ®Google Scholar
• Houston , J. E. and Bland , R. D. 1973 . Relationship between sputter cleaning parameters and surface contaminants . J. Appl. Phys. , 44 : 2504
   Web of Science ®Google Scholar
• Thornton , J. A. and Penfold , A. S. 1978 . “ Cylindrical magnetron sputtering ” . In Thin Film Processes , Edited by: Vossen , J. L. and Kern , W. 76 New York : Academic Press .
   Google Scholar
• Fraser , D. B. 1978 . “ The sputter and S-gun magnetrons ” . In Thin Film Processes , Edited by: Vossen , J. L. and Kern , W. 115 New York : Academic Press .
   Google Scholar
• Waits , R. K. 1978 . “ Planar magnetron sputtering ” . In Thin Film Processes , Edited by: Vossen , J. L. and Kern , W. 131 New York : Academic Press .
   Google Scholar
• Chopra , K. L. , Randlett , M. R. and Duff , R. H. 1967 . Face-centered cubic modification in sputtered films of tantalum, molybdenum, tungsten, thenium, hafnium and zirconium . Philos. Mag. , 16 : 261 See, for example
   Web of Science ®Google Scholar
• von Ardenne , M. 1956 . Tabellen der Elektronenphysik, Ionenphysik, and Ubermicroskopie , 554 Berlin : Dtsch. Verlag Wiss. .
   Google Scholar
• Kaufman , H. R. 1974 . Technology of electron-bombardment ion thrusters . Adv. Electron. Electron Phys. , 36 : 265
   Google Scholar
• Reader , P. D. and Kaufman , H. R. 1975 . Optimization of an electron-bombardment ion source for ion machining Applications . J. Vac. Sci. Technol. , 12 : 1344
   Web of Science ®Google Scholar
• Fort Collins, Colorado : Ion Tech, Inc. .
   Google Scholar
• Barnett , S. A. and Greene , J. E. unpublished
   Google Scholar
• Eltoukhy , A. H. and Greene , J. E. 1979 . Growth and electrical properties of sputter-deposited single crystal GaSb films on GaAs substrates . J. Appl. Phys. , 50 : 6396
   Web of Science ®Google Scholar
• Vossen , J. L. 1977 . “ Transparent conducting films ” . In Physics of Thin Films , Edited by: Hass , G. , Francombe , M. H. and Hoffman , R. W. Vol. 9 , 1 New York : Academic Press .
   Google Scholar
• Wickersham , C. E. and Greene , J. E. 1978 . The effect of substrate bias on the electrical and optical properties of In2O3, films grown by rf sputtering . Phys. Stat. Sol. (a) , 47 : 329
   Web of Science ®Google Scholar
• Ohhata , Y. , Shinoki , F. and Yoshida , S. 1979 . Optical properties of rf reactive sputtered tin-doped In2O3 films . Thin Solid Films , 59 : 255
   Web of Science ®Google Scholar
• Miyata , N. , Miyake , K. , Koga , K. and Fukushima , T. 1980 . Transparent conducting cadmium-tin oxide films deposited by rf sputtering from a CdO-SnO2 target . J. Electrochem. Soc. , 127 : 918
   Web of Science ®Google Scholar
• Natarajan , B. R. , Eltoukhy , A. H. , Greene , J. E. and Barr , T. L. 1980 . Mechanisms of the reactive sputtering of In I. Growth of InN in mixed Ar-N2 discharges . Thin Solid Films , 69 : 201
   Web of Science ®Google Scholar
• Berak , J. M. and Quinn , D. J. Utilization of a subliming solid (arsenic) in rf reactive sputtering . J. Vac. Sci. Technol. , 13 609
   Web of Science ®Google Scholar
• Fraser , D. B. and Melchoir , H. 1972 . Sputter-deposited CdS films with high photoconductivity through film thickness . J. Appl. Phys. , 43 : 3120
   Web of Science ®Google Scholar
• Westwood , W. D. and Ingrey , S. J. 1976 . Fabrication of optical wave guides by ion-beam sputtering . J. Vac. Sci. Technol. , 13 : 104
   Web of Science ®Google Scholar
• Weissmantel , C. 1976 . Reactive film preparation . Thin Solid Films. , 32 : 11
   Web of Science ®Google Scholar
• Natarajan , B. R. , Eltoukhy , A. H. , Greene , J. E. and Barr , T. L. 1980 . Mechanisms of the reactive sputtering of In, Part 2: Growth of indium oxynitride in mixed N2-O2 discharges . Thin Solid Films , 69 : 217
   Web of Science ®Google Scholar
• Eltoukhy , A. H. , Natarajan , B. R. , Greene , J. E. and Barr , T. L. 1980 . Mechanisms of the reaction sputtering of IN, Part 3: A general phenomenological model for reactive sputtering . Thin Solid Films , 69 : 229
   Web of Science ®Google Scholar
• Hovel , H. J. and Cuomo , J. J. 1972 . Electrical and optical properties of rf-sputtered GaN and InN . Appl. Phys. Letters , 20 : 71
   Web of Science ®Google Scholar
• Greene , J. E. , Barnett , S. A. , Cadien , K. C. and Ray , M. A. 1982 . Growth of single crystal GaAs and metastable (GaSb)1−x, alloys by sputter deposition: ion-surface interaction effects . J. Cryst. Growth , 56 : 389
   Web of Science ®Google Scholar
• Winters , H. F. , Raimondi , D. L. and Horne , D. E. 1969 . Proposed model for the composition of sputtered multicomponent thin films . J. Appl. Phys. , 40 : 2996
   Web of Science ®Google Scholar
• Bolker , B. F. T. , Sidles , P. H. and Danielson , G. C. 1975 . Variable composition thin films in ternary chalcogenide systems by rf cosputtering . J. Vac. Sci. Technol. , 12 : 114
   Web of Science ®Google Scholar
• Heiman , N. , Kazama , N. , Kyser , D. F. and Muikiewiez , V. J. 1978 . Effects of substrate bias and annealing on the properties of amorphous alloy films of Gd-Co, Gd-Fe, and Gd-Co-X (X = Mo, Cu, Au) . J. Appl. Phys. , 49 : 366
   Web of Science ®Google Scholar
• Cuomo , J. J. and Gambino , R. J. 1975 . Influence of sputtering parameters on the composition of multi-component films . J. Vac. Soc. Technol. , 12 : 79
   Web of Science ®Google Scholar
• Rivaud , L. , Romano , L. T. , Barnett , S. A. and Greene , J. E. unpublished
   Google Scholar
• Narusawa , T. , Shimizu , S. and Komiya , S. 1979 . Simultaneous RHEED-AES-QMS study on epitaxial Si film growth on Si (111) and sapphire (1102) surfaces by partially ionized vapor deposition . J. Vac. Sci. Technol. , 16 : 366
   Web of Science ®Google Scholar
• Nowicki , R. S. , Buckley , W. D. , Mackintosh , W. D. and Mitchell , I. V. 1974 . Effects of deposition parameters on properties of rf sputtered molybdenum films . J. Vac. Sci. Technol. , 11 : 675
   Web of Science ®Google Scholar
• Cadien , K. C. , Eltoukhy , A. H. and Greene , J. E. 1981 . Growth of single crystal metastable semicon-ducting (GaSb)1−x Gex films . Appl. Phys. Letters , 38 : 773
   Web of Science ®Google Scholar
• Blachman , A. G. 1973 . dc bias-sputtered aluminum films . J. Vac. Sci. Technol. , 10 : 299
   Web of Science ®Google Scholar
• Zilko , J. L. and Greene , J. E. 1980 . Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs, Part I: Crystal growth . J. Appl. Phys. , 51 : 1549
   Web of Science ®Google Scholar
• Bland , R. D. , Kominiak , G. J. and Mattox , D. M. 1974 . Effect of ion bombardment during deposition on thick metal and ceramic deposits . J. Vac. Sci. Technol. , 11 : 671
   Web of Science ®Google Scholar
• Pan , A. and Greene , J. E. 1981 . Residual compressive stress in sputter deposited TiC films on steel substrates . Thin Solid Films , 78 : 25
   Web of Science ®Google Scholar
• Hanak , J. J. 1970 . The “multiple-sample concept” in materials research: synthesis, compositional analysis and testing of entire multicomponent systems . J. Materl. Sci. , 5 : 964
   Web of Science ®Google Scholar
• Hanak , J. J. , Lehman , H. W. and Wehner , R. K. 1972 . Calculation of deposition profiles and compositional analysis of cosputtered films . J. Appl. Phys. , 43 : 1666
   Web of Science ®Google Scholar
• Greene , J. E. , Wickersham , C. E. and Zilko , J. L. 1976 . Growth of In1−xGaxSb and In1−xAlxSb films by multi-target rf sputtering . Thin Solid Films , 32 : 51
   Web of Science ®Google Scholar
• Greene , J. E. , Wickersham , C. E. and Zilko , J. L. 1976 . Epitaxial growth of In1−xGaxSb thin films by multitarget rf sputtering . J. Appl. Phys. , 47 : 2289
   Web of Science ®Google Scholar
• Wickersham , C. E. and Greene , J. E. 1976 . Multitarget sputtering using decoupled plasmas . J. Appl. Phys. , 47 : 4734
   Web of Science ®Google Scholar
• Eltoukhy , A. H. and Greene , J. E. 1978 . Ion bombardment enhanced diffusion during the growth of sputtered superlattice thin films . Appl. Phys. Letters , 33 : 343
   Web of Science ®Google Scholar
• Eltoukhy , A. H. and Greene , J. E. 1979 . Compositionally modulated sputtered InSb/GaSb superlattices: Crystal growth and interlayer diffusion . J. Appl. Phys. , 50 : 505
   Web of Science ®Google Scholar
• Nowicki , R. S. 1980 . The rf diode co-deposition of refractorymetal silicides . Sol. St. Technol. , Nov. : 95
   Google Scholar
• Ball , D. J. 1972 . Plasma diagnostics and energy transport of a dc discharge used for sputtering . J. Appl. Phys. , 43 : 3047
   Web of Science ®Google Scholar
• Chapman , B. N. , Downer , D. and Guimaraes , L. J. M. 1974 . Electron effects in sputtering and co-sputtering . J. Appl. Phys. , 45 : 2115
   Web of Science ®Google Scholar
• Lau , S. S. , Mills , R. H. and Muth , D. G. 1972 . Temperature rise during film deposition by rf and dc sputtering . J. Vac. Sci. Technol. , 9 : 1196
   Web of Science ®Google Scholar
• Barnett , S. A. and Greene , J. E. unpublished
   Google Scholar
• Stirling , D. J. 1966 . electron bombardment induced changes in the growth and epitaxy of evaporated gold films . Appl. Phys. Letters , 9 : 326
   Google Scholar
• Palmberg , P. W. , Rhodin , T. N. and Todd , C. J. 1967 . Low energy electron diffraction studies of epitaxial growth of silver and gold in ultra-high vacuum . Appl. Phys. Letters , 10 : 122
   Web of Science ®Google Scholar
• Palmberg , P. W. , Todd , C. T. and Rhodin , T. N. 1968 . Role of surface defects in the epitaxial growth of some fcc metals on potassium chloride cleaved in ultra-high vacuum . J. Appl. Phys. , 39 : 4650
   Web of Science ®Google Scholar
• Jordan , M. R. and Stirland , D. J. 1971 . Changes in epitaxy produced by electron bombardment . Thin Solid Films , 8 : 221
   Web of Science ®Google Scholar
• Lord , D. G. and Prutton , M. 1974 . Electrons and the epitaxial growth of metals on alkaki halides . Thin Solid Films , 21 : 341
   Web of Science ®Google Scholar
• Shimaoka , G. 1975 . Modifications of epitaxy in evaporated films by electric charge effects . J. Cryst. Growth , 31 : 92
   Web of Science ®Google Scholar
• Namba , Y. and Nagai , K. 1976 . Epitaxy of Ag on NaCl deposited by ion deposition . Japn. J. Appl. Phys. , 15 : 377
   Web of Science ®Google Scholar
• Chapman , B. N. and Campbell , D. S. 1969 . Condensation of high-energy atomic beams . J. Phys. C. , 2 : 200
   Web of Science ®Google Scholar
• Adamov , M. , Perovic , B. and Nenadovic , T. 1974 . Electrical and structural properties of thin gold films obtained by vacuum evaporation and sputtering . Thin Solid Films , 24 : 89
   Web of Science ®Google Scholar
• Ueda , R. 1976 . Film growth of metals and semiconductors with ionized beams and surface imperfections . Thin Solid Films. , 39 : 25
   Web of Science ®Google Scholar
• Bykov , Yu. V. , Guseva , M. B. , Kevedo , Kh. and Adbrashitova , D. Kh. 1977 . Epitaxial gold films during ion bombardment . Bull. Akad. Nauk. SSSR , 41 : 135
   Google Scholar
• Krikorian , E. and Sneed , R. J. 1979 . Nucleation, growth, and transformation of amorphous and crystalline solids condensing from the gas phase . Astrophys. Space Science , 65 : 129
   Web of Science ®Google Scholar
• Ueda , R. 1975 . Synthesis and epitaxial growth of CdTe films by neutral and ionized beams . J. Cryst. Growth. , 31 : 333
   Web of Science ®Google Scholar
• Namba , Y. and Mori , T. 1976 . Epitaxial growth of ZnTe on NaCl by ion deposition . Thin Solid Films. , 39 : 119
   Web of Science ®Google Scholar
• Lane , G. E. and Anderson , J. C. 1975 . The nucleation and initial growth of gold films deposited onto sodium chloride by ion beam sputtering . Thin Solid Films , 26 : 5
   Web of Science ®Google Scholar
• Lane , G. E. and Anderson , J. C. 1979 . Features of the initial growth of gold films deposited on rock-salt substrates by ion beam sputtering . Thin Solid Films , 57 : 277
   Web of Science ®Google Scholar
• Marinov , M. 1977 . Effect of ion bombardment on the initial stages of thin film growth . Thin Solid Films , 46 : 267
   Web of Science ®Google Scholar
• Shawki , G. S. A. , I-Sherbiny , E. M. G. and Salem , F. B. 1981 . Nucleation and interface formation in thin films . Thin Solid Films , 75 : 29
   Web of Science ®Google Scholar
• Bovey , P. E. 1969 . The effect of arrival energy on the properties of gold films . Vacuum , 19 : 497
   Web of Science ®Google Scholar
• Cornely , R. H. , Mumtaz , A. and Fuschillo , N. 1975 . Nucleation and growth of rf triode sputtered gold films . J. Vac. Sci. Technol. , 12 : 693
   Web of Science ®Google Scholar
• Babaev , V. O. , Bykov , Ju. V. and Guseva , M. B. 1976 . Effect of ion irradiation on the formation, structure and properties of thin metal films . Thin Solid Films , 38 : 1
   Web of Science ®Google Scholar
• See discussion in reference 186
   Google Scholar
• Aleksandrove , L. N. , Lutovich , A. S. and Beloresets , E. D. 1979 . The mechanism of silicon epitaxial layer growth from ion-molecular beams . Phys. Stat. Sol. (a) , 54 : 463
   Google Scholar
• Shimizu , S. and Komiya , S. 1981 . Effects of Ga and Si ionization of the growth of Ga doped Si MBE . J. Vac. Sci. Technol. , 18 : 765
   Web of Science ®Google Scholar
• Pchelyakov , O. P. , Lovyagin , R. N. , Krivorotov , E. A. , Toropov , A. I. , Aleksandrov , L. N. and Stenin , S. I. 1973 . Silicon homoepitaxy with ion sputtering, 1. Mechanism of growth . Phys. Stat. Sol. (a) , 17 ( Suppl. 2 ) : 339
   Web of Science ®Google Scholar
• Aleksandrov , L. N. and Lovyagin , R. N. 1974 . Homoepitaxial growth of silicon films by ion sputtering . Japn. J. Appl. Phys. , : 609 Pt. 1, Proc. 6th Internatl. Vac. Congr., Kyoto, Japan
   Web of Science ®Google Scholar
• Aleksandrov , L. N. and Lovyagin , R. N. 1974 . Step motion of the growth surface in the initial stage of semiconductor film epitaxy with ion sputtering . Thin Solid, Films. , 20 : 1
   Web of Science ®Google Scholar
• Chopra , K. L. 1966 . influence of electric field on the growth of thin films . J. Appl. Phys. , 37 : 2249
   Web of Science ®Google Scholar
• Gunnier , A. 1963 . X-ray Diffraction in Crystals, Imperfect Crystals, and Amorphous Bodies , Edited by: Larrian , P. and Lorrian , D. Saint Marie . 279 San Francisco : W. H. Freeman and Co. .
   Google Scholar
• Cadien , K. C. , Eltoukhy , A. H. and Greene , J. E. 1981 . Growth and thermal stability of single crystal metastable semiconducting (GaSb)1−xGex, films . Vacuum , 31 : 253
   Web of Science ®Google Scholar
• Tsaur , B. Y. , Mayer , J. W. and Tu , K. N. 1980 . Ion-beam induced metastable Pt2Si3 phase: I. Formation, structure, and properties . J. Appl. Phys. , 51 : 5326
   Web of Science ®Google Scholar
• Tsaur , B. Y. , Mayer , J. W. , Graczyk , J. F. and Tu , K. N. 1980 . Ion-beam induced metastable Pt2Si3 phase: II. Kinetics and morphology . J. Appl. Phys. , 51 : 5334
   Web of Science ®Google Scholar
• Tsuar , B. Y. , Lau , S. S. and Mayer , J. W. 1980 . Continuous series of Ag-Cu solid solutions formed by ion beam-mixing . Appl. Phys. Letters , 36 : 823
   Web of Science ®Google Scholar
• Winters , H. F. 1966 . Ionic adsorption and dissociation cross-section for nitrogen . J. Chem. Phys. , 44 : 1472
   Web of Science ®Google Scholar
• Rivaud , L. , Ward , I. D. , Eltoukhy , A. H. and Greene , J. E. 1981 . Enhanced diffusion and precipitation in Cu: In alloys due to low energy ion bombardment . Surf. Sci. , 102 : 610
   Web of Science ®Google Scholar
• Rivaud , L. , Eltoukhy , A. H. and Greene , J. E. 1982 . Low energy ion bombardment enhanced diffusion, segregation, and phase transformations in Cu: In alloys . Rad. Eff. , 61 : 83
   Web of Science ®Google Scholar
• Winters , H. F. and Kay , E. 1967 . Gas incorporation into sputtered films . J. Appl. Phys. , 38 : 3928
   Web of Science ®Google Scholar
• Lee , W. W. Y. and Oblas , D. 1975 . Argon entrapment in metals films by dc triode sputtering . J. Appl. Phys. , 46 : 1728
   Web of Science ®Google Scholar
• Cuomo , J. J. and Gambino , R. J. 1977 . Incorporation of rare gases in sputtered amorphous metal films . J. Vac. Sci. Technol. , 14 : 152
   Web of Science ®Google Scholar
• Andersen , H. H. and Sigmund , P. 1965 . Defect distributions in channeling experiments . Nucl. Instr. Methods , 38 : 238
   Web of Science ®Google Scholar
• Barnett , S. A. and Greene , J. E. unpublished result
   Google Scholar
• Naganuma , M. and Takahashi , K. 1975 . Ionized Zn doping of GaAs molecular beam epitaxial films . Appl. Phys. Letters , 27 : 342
   Web of Science ®Google Scholar
• Matsunaga , N. , Suzuki , T. and Takahaski , J. 1978 . Ionized beam doping in molecular beam epitaxy of GaAs and AlxGa1−xAs . J. Appl. Phys. , 49 : 5710
   Web of Science ®Google Scholar
• Bean , J. C. and Dingle , R. 1979 . Luminescent p-GaAs grown by zinc ion doped MBE . Appl. Phys. Letters , 35 : 925
   Web of Science ®Google Scholar
• Itch , T. , Nakamura , T. , Muromachi , M. and Sugiyama , T. 1976 . Antimony concentrations in silicon epitaxial layer formed by partially ionized vapor deposition . Japan. J. Appl. Phys. , 15 : 1145
   Web of Science ®Google Scholar
• Ota , Y. 1980 . Silicon molecular beam epitaxy with simultaneous ion implant doping . J. Appl. Phys. , 52 : 1102
   Web of Science ®Google Scholar
• Francombe , M. H. 1968 . Preparation and properties of sputtered films . Trans. 10th Nat. Vacuum Symp. , : 316
   Google Scholar
• Francombe , M. H. 1966 . “ The preparation of epitaxial films by evaporation and cathodic sputtering ” . In The Use of Thin Films in Physical Investigations , Edited by: Anderson , J. C. 29 New York : Academic Press .
   Google Scholar
• Francombe , M. H. 1971 . “ Growth of epitaxial films by sputtering ” . In Epitaxial Growth , Edited by: Matthews , J. W. 109 New York : Academic Press .
   Google Scholar
• Greene , J. E. 1980 . “ Crystal growth by sputtering ” . In Handbook of Semiconductors , Edited by: Keller , S. P. Vol. III , 499 Amsterdam : North Holland Publishing Co. .
   Google Scholar
• Greene , J. E. and Eltoukhy , A. H. 1981 . Semiconductor crystal growth by sputter deposition . Surf. Interface Analysis , 3 : 34
   Web of Science ®Google Scholar
• Krikorian , E. and Sneed , R. J. Deposition parameters affecting epitaxial growth of single crystal films . Trans. 10th Nat. Vacuum Symp. pp. 368 New York
   Google Scholar
• Krikorian , E. 1964 . “ sputtering parameters affecting epitaxial growth of semiconductor single crystal films ” . In Single Crystal Films , Edited by: Francombe , M. H. and Sato , H. 113 Oxford : Pergamon Press .
   Google Scholar
• Wolsky , S. P. , Piwkowski , T. R. and Wallis , G. 1965 . Low pressure sputtered germanium films . J. Vac. Sci. Technol. , 2 : 97
   Web of Science ®Google Scholar
• Haq , K. E. 1965 . Deposition of germanium films by sputtering . J. Electrochem. Soc. , 112 : 500
   Web of Science ®Google Scholar
• Krikorian , E. and Sneed , R. J. 1966 . Epitaxial deposition of germanium by both sputtering and evaporation . J. Appl. Phys. , 37 : 3665
   Web of Science ®Google Scholar
• Khan , J. T. 1973 . Low temperature epitaxy of Ge films by sputter deposition . J. Appl. Phys. , 44 : 14
   Web of Science ®Google Scholar
• Adamsky , R. F. 1969 . Effect of deposition parameters on the crystallinity of evaporated germanium films . J. Appl. Phys. , 40 : 4301
   Web of Science ®Google Scholar
• Layton , C. K. and Cross , K. B. 1977 . The growth of epitaxial germanium films by triode sputtering . Thin Solid Films , 1 : 169
   Google Scholar
• Cadien , K. C. and Greene , J. E. to be published
   Google Scholar
• Sze , S. M. 1969 . Physics of Semiconductor Devices , 40 New York : John Wiley and Sons .
   Google Scholar
• Unvala , G. A. and Pearman , K. 1970 . Growth of epitaxial silicon layers by ion beam sputtering . J. Mat. Sci. , 5 : 1016
   Google Scholar
• Weissmantel , C. , Fielder , O. , Hecht , G. and Reisse , G. 1972 . Ion beam sputtering and its Application for the deposition of semiconducting films . Thin Solid Films. , 13 : 359
   Web of Science ®Google Scholar
• Weissmantel , C. 1976 . Ion beam utilization for etching and film deposition . Vide , 183 : 107
   Google Scholar
• Hinneberg , H. J. , Weidner , M. , Hect , G. and Weissmantel , C. 1976 . Electrical properties of ion beam sputtered silicon layers on spinet . Thin Solid Films , 33 : 25
   Web of Science ®Google Scholar
• El-Dessouki , M. S. and Weissmantel . Photoelectic, optical, and structure properties of ion beam sputtered silicon films on spinet . Proc. 7th Internat. Vacuum Congr. 1977 , Vienna.
   Google Scholar
• Harmon , R. V. , Tvarozek , O. , Vanek , O. , Kempny , M. and Liday , J. 1976 . rf sputtered silicon films on sapphire . Thin Solid Films , 32 : 55
   Web of Science ®Google Scholar
• Ito , K. 1978 . Preparation of Ge-Si epitaxial alloys by sputtering . J. Cryst. Growth , 45 : 340
   Web of Science ®Google Scholar
• Aleksandrov , L. N. , Lovagin , R. N. , Pchelyakov , O. P. and Stenin , S. I. 1974 . Heteroepitaxy of germanium thin films on silicon byion sputtering . J. Cyst. Growth , 24/25 : 298
   Web of Science ®Google Scholar
• Bajor , G. , Cadien , K. C. , Ray , M. , Greene , J. E. and Vljayakumar , P. S. 1982 . The growth of high quality epitaxial Ge films on (100)Si by sputter deposition . Appl. Phys. Letters , 40 : 696
   Web of Science ®Google Scholar
• Gunther , K. 1966 . “ Interfacial and condensation processes occurring with multicomponent vapors ” . In The Use of Thin Films for Physical Investigations , Edited by: Anderson , J. C. 213 New York : Academic Press .
   Google Scholar
• Cho , A. Y. and Arthur , J. R. 1975 . Molecular beam epitaxy . Prog. Sol. St. Chem. , 20 : 157 See, for example
   Google Scholar
• Francombe , M. H. , Flood , J. J. and Turner , T. L. 1962 . 5th Internat. Congr. electron Microscopy Vol. I , DD-8 Philadelphia
   Google Scholar
• Yurasova , V. E. , Levykina , L. N. and Efremenkova , V. M. 1966 . Preparation of thin intermetallic compound films by the cathode sputtering method . Sov. Phys. Sol. State St. , 7 : 2332
   Web of Science ®Google Scholar
• Kahn , T. H. 1968 . Epitaxial growth on indium antimonide films as studied by in-situ electron diffraction . Surface Sci. , 9 : 306
   Web of Science ®Google Scholar
• Cervenak , J. , Zivakova , A. and Buch , J. 1970 . Structure and electrical properties of Insb thin films prepared by plasmatic sputtering . Czech. J. Phys. , B20 : 84
   Web of Science ®Google Scholar
• Jachimowski , M. and Kusier , E. 1974 . Recrystallization of InSb thin films obtained by cathode sputtering . Thin Solid Films , 24 : 151
   Web of Science ®Google Scholar
• Greene , J. E. and Wickersham , C. E. 1976 . Structure and electrical characteristics of InSb thin films grown by rf sputtering . J. Appl. Phys. , 47 : 3630
   Web of Science ®Google Scholar
• Bajor , G. , Barnett , S. A. , Klinger , R. E. and Greene , J. E. 1979 . Determination of concentrations and ionization energies of imperfections in degenerate InSb films . Thin Solid Films , 59 : 183
   Web of Science ®Google Scholar
• Barnett , S. A. , Bajor , G. , Eltoukhy , A. H. and Greene , J. E. to be published
   Google Scholar
• Eltoukhy , A. H. and Greene , J. E. unpublished
   Google Scholar
• Eltoukhy , A. H. 1978 . Ph.D. thesis Urbana : Department of Metallurgy, University of Illinois .
   Google Scholar
• Jachimowski , M. and Data , A. 1978 . dc sputtered AlxIn1−xSb films . Thin Solid Films , 48 : L15
   Web of Science ®Google Scholar
• Jha , K. N. and Korgaonkar , A. V. 1971 . Electrical properties of dc sputtered InAs thin films . Thin Solid Films , 9 : 133
   Web of Science ®Google Scholar
• Szczyrbowski , J. , Czapla , A. and Jachimowski , M. 1977 . dc sputtering of thin indium arsenide films . Thin Solid Films , 42 : 193
   Web of Science ®Google Scholar
• Molnar , B. , Flood , J. J. and Francombe , M. H. 1965 . Fibered and Epitaxial growth in sputtered films of GaAs . J. Appl. Phys. , 35 : 3554
   Web of Science ®Google Scholar
• Evanns , T. and Noreika , A. J. 1966 . Effect of gaseous environment on the structure of sputtered GaAs films on NaCl substrates . Phil. Mag. , 23 : 717
   Google Scholar
• Bunton , G. V. and Day , S. C. M. 1972 . Epitaxial thin films of ZnS and GaAs prepared by rf sputtering on NaCl substrates . Thin Solid Films , 20 : 22
   Google Scholar
• Ray , M. , Barnett , S. A. , Chen , Haydn and Greene , J. E. unpublished
   Google Scholar
• Illegems , M. , Dingle , R. and Rupp , L. W. Jr. 1975 . Optical and electrical properties of Mn-doped GaAs grown by molecular beam, epitaxy . J. Appl. Phys. , 46 : 3059
   Web of Science ®Google Scholar
• Rosztoczy , F. E. , Ermanis , F. , Hayashi , I. and Schwartz , B. 1970 . Germanium doped GaAs . J. Appl. Phys. , 41 : 264
   Web of Science ®Google Scholar
• Vilms , J. and Garrett , J. P. 1972 . The growth and properties of LPe and GaAs . Sol. St. Electronics , 15 : 443
   Web of Science ®Google Scholar
• Rutz , R. , Harris , E. P. and Cuomo , J. J. 1973 . IBM J. Res. Dev. , 27 : 61
   Web of Science ®Google Scholar
• Duchene , J. 1971 . Radiofrequency reactive sputtering for deposition of aluminum nitride thin films . Thin Solid Films , 8 : 69
   Web of Science ®Google Scholar
• Puychevrier , N. and Monoret , M. 1976 . Synthesis of III-V semiconductor nitrides by reactive cathodic sputtering . Thin Solid Films. , 36 : 141
   Web of Science ®Google Scholar
• Favennec , P. N. , Henry , L. , Janicki , T. and Salvi , M. 1977 . Protection due GaAs, Ga1−xAlxAs. et GaAs1−xPx, par due nitrure d'aluminum depose par pulverisation reactive . Thin Solid Films , 47 : 327
   Web of Science ®Google Scholar
• Noreika , A. J. , Francombe , M. H. and Zeitman , S. A. 1969 . Dielectric properties of reactively sputtered films of aluminum nitride . J. Vac. Sci. Technol. , 6 : 194
   Web of Science ®Google Scholar
• Shuskus , A. J. , Reeder , T. M. and Paradis , E. L. 1974 . rf sputtered aluminum nitride films on sapphire . Appl. Phys. Letters , 24 : 155
   Web of Science ®Google Scholar
• Vesely , J. C. , Shatzkes , M. and Burkhardt , P. T. 1974 . Space-charge-limited current flow in gallium nitride thin films . Phys. Rev. B , 10 : 582
   Web of Science ®Google Scholar
• Sosniak , J. 1970 . Gallium phosphide films deposited by sputtering . J. Vac. Sci. Technol. , 7 : 110
   Web of Science ®Google Scholar
• Starosta , K. , Zellinka , J. , Berkova , D. and Kohout , J. 1979 . rf sputtering of gallium phosphide thin films . Thin Solid Films , 61 : 241
   Web of Science ®Google Scholar
• Hickernell , F. S. 1973 . dc triode sputtered zinc oxide surface elastic wave transducers . J. Appl. Phys. , 44 : 1061
   Web of Science ®Google Scholar
• Khuri-Yakub , B. S. , Kino , G. S. and Galle , P. 1975 . Studies of the optimum conditions for growth of rfsputtered ZnO films . J. Appl. Phys. , 46 : 3266
   Web of Science ®Google Scholar
• Ohji , K. , Tohda , T. , Wasa , K. and Hayakawa , S. 1976 . Highly oriented ZnO films by rf sputtering of hemispherical electrode system . J. Appl. Phys. , 47 : 1726
   Web of Science ®Google Scholar
• Paradis , E. L. and Shuskus , A. J. 1976 . rf sputtered epitaxial ZnO films on sapphire for integrated optics . Thin Solid Films. , 38 : 131
   Web of Science ®Google Scholar
• Mitsuyu , T. , Ono , S. and Wasa , K. 1980 . Structure and SAW properties of rf-sputtered single-crystal films of ZnO on sapphire . J. Appl. Phys. , 52 : 2464
   Web of Science ®Google Scholar
• Ambersley , M. D. and Pitt , C. W. 1981 . Piezoelectric ZnO transducers produced by rf magnetron sputtering . Thin Solid Films. , 80 : 183
   Web of Science ®Google Scholar
• Fritsche , H. 1952 . Der einfluss von gelostein sauerstoff auf die elektrische leitfahigkeit von zinkoxyd . Z. Phys. , 133 : 422
   Google Scholar
• Raimondi , D. L. and Kay , E. 1970 . High resistivity transparent ZnO thin films . J. Vac. Sci. Technol. , 7 : 96
   Web of Science ®Google Scholar
• Rozgoni , G. A. and Polito , W. J. 1966 . Preparation of ZnO thin films by sputtering of the compound in oxygen and argon . Appl. Phys. Letters , 8 : 220
   Web of Science ®Google Scholar
• Rozgonyi , G. A. and Polito , J. R. 1969 . Epitaxial thin films of ZnO on CdS and sapphire . J. Vac. Sci. Technol. , 6 : 115
   Web of Science ®Google Scholar
• Foster , N. F. 1969 . Crystallographic orientation of zinc oxide films deposited by triode sputtering . J. Vac. Sci. Technol. , 6 : 111
   Web of Science ®Google Scholar
• Maniv , S. and Zangvil , A. 1978 . Controlled texture of reactively rf sputtered ZnO thin films . J. Appl. Phys. , 49 : 2787
   Web of Science ®Google Scholar
• Lad , R. J. , Funkenbush , P. D. and Aita , C. R. 1980 . Post deposition annealing behavior of rf sputtered ZnO films . J. Vac. Sci. Technol. , 17 : 808
   Web of Science ®Google Scholar
• Ohji , K. , Yamazaki , O. , Wasa , K. and Hayakawa , S. 1978 . New sputtering system for manufacturing ZnO thin film SAW devices . J. Vac. Sci. Technol. , 15 : 1601
   Web of Science ®Google Scholar
• Hada , T. , Wasa , K. and Hayakawa , S. 1971 . Structures and electrical properties of zinc oxide films prepared by low pressure sputtering system . Thin Solid Films , 7 : 135
   Web of Science ®Google Scholar
• Hata , T. , Minamikawa , T. , Morimoto , O. and Hada , T. 1979 . dc reactive magnetron sputtered ZnO films . J. Cryst. Growth , 47 : 171
   Web of Science ®Google Scholar
• Shiosaki , T. , Ohnishi , S. , Murakami , Y. and Kawabata , A. 1978 . High rate epitaxial growth of ZnO films on sapphire by planar magnetron rf sputtering system . J. Cryst. Growth , 45 : 364
   Web of Science ®Google Scholar
• Glew , R. W. 1977 . Cadmium selenide sputtered films . Thin Solid Films , 46 : 59
   Web of Science ®Google Scholar
• Tanaka , K. 1970 . Photoconductivity of CdSe films prepared by a vapor evaporating reactive sputtering method . Japn. J. Appl. Phys. , 9 : 1070
   Web of Science ®Google Scholar
• Lehmann , H. W. and Wildmer , R. 1976 . Radio frequency sputtering of CdSe films . Thin Solid Films , 33 : 301
   Web of Science ®Google Scholar
• Helwig , G. and Konig , H. 1955 . Uber die herstellulng von lichtempfindlilchen cadmiumsulfidschichten durch kathodenzerstaubung . Z. Angew. Phys. , 7 : 323
   Google Scholar
• Dresner , J. and Shallcross , F. V. 1962 . Rectification and space-charge-limited currents in CdS films . Sol. Stat. Electron. , 5 : 205
   Web of Science ®Google Scholar
• Lakshamanan , T. K. and Mitchell , J. M. Some properties of sputtered sulphide films . Trans. 10th American Vacuum Soc. Symp. pp. 335
   Google Scholar
• Lichtensteiger , M. , Lagnado , I. and Gatos , H. C. 1969 . p-type cadmium sulphide crystalline films . Appl. Phys. Letters. , 15 : 418
   Web of Science ®Google Scholar
• Durand , S. , Bugnet , P. , Deforges , J. and Onderdelinden , D. 1972 . Precision measurements of the angular and temperature dependence of sputtering . Radiat. Eff. , 14 : 93
   Google Scholar
• Boronkay , S. , Cassanhiol , B. and Deforges , J. 1977 . Couches minces de CdS photosensibles par pulverisation cathodique rf reactive . Vide , 32 : 94
   Google Scholar
• Durand , S. , Bugnet , P. , Deforges , J. and Batailler , G. 1971 . Application de la pulverisation cathodique reactive a la fabrication de CdS photosensible . Thin Solid Films , 11 : 237
   Web of Science ®Google Scholar
• Takeuchi , M. , Sakagawa , Y. and Nagasaka , H. 1976 . Photoconduction and photovoltaic effects in sputtered CdS films . Thin Solid Films , 33 : 89
   Web of Science ®Google Scholar
• Clarke , J. R. and Greene , J. E. 1981 . Polycrystalline CdS films with large photoconductive gain grown by reactive sputtering . J. Vac. Sci., Technol. , 18 : 382
   Web of Science ®Google Scholar
• Nakada , T. 1977 . Growth and structure of rf sputtered HgS films on NaCl . J. Appl. Phys. , 48 : 3405
   Web of Science ®Google Scholar
• Nakada , T. and Kunioka , A. 1977 . Effect of potassium of crystal modification of rf sputtered HgS films . Japn. J. Appl. Phys. , 16 : 1045
   Web of Science ®Google Scholar
• Nakada , T. and Kunioka , A. 1980 . Growth and properties of sputter deposited α-HgS films in Hg vapor . Japn. J. Appl. Phys. , 19 : 845
   Web of Science ®Google Scholar
• Jones , P. L. , Moore , D. and Smith , D. C. A. 1976 . A technique for the growth of single crystal films of zinc sulphide on (100) gallium arsenide by radio frequency sputtering . J. Phys. E. Sci. Intr. , 9 : 312
   Google Scholar
• Schonbrodt , L. and Reichett , K. 1981 . Preparation of ZnS films by reactive sputtering and their investigation by electron microscopy and Rutherford backscattering . Thin Solid Films , 81 : 45
   Web of Science ®Google Scholar
• Durand , S. , Bulgnet , P. and Deforges , J. 1975 . Pulverisation cathodique reactive du sulfure de zinc active au cuivre et au chlore . Vide , 30 : 8
   Google Scholar
• Deforges , J. , Durand , S. and Bugnet , P. 1973 . Variations du pourcentage de ZnS dans des solutions solides de An1- CdxS obtenues par pulverisation cathodique reactive . Thin Solid Films , 18 : 231
   Web of Science ®Google Scholar
• Deforges , J. , Cachard , A. and Lupin , D. J. P. 1977 . Etude de solutions solides de composes II-VI obtenues par copulverisation reactive . Vide , 32 : 26
   Google Scholar
• Fraser , D. B. 1972 . Sputter deposited films for display devices . Thin Solid Films , 13 : 407
   Web of Science ®Google Scholar
• Valentovic , D. , Cervenak , J. , Luby , S. , Aldea , M. L. and Boila , T. 1979 . Some non-equilibrium phenomena in sputtered CdTe thin films . Phys. Stat. Sol. A. , 56 : 341
   Web of Science ®Google Scholar
• Gonzalez-Diaz , G. , Rodriguez-Vidal , M. , Sanchez-Quesada , F. and Valles-Abarca , J. A. 1971 . Electrode effects in the ac characteristics of thin sputtered CdTe films . Thin Solid Films , 58 : 67
   Web of Science ®Google Scholar
• Pawlewicz , W. T. , Allen , R. P. , Barrus , H. G. and Laegreid , N. 1977 . Structure and properties of sputter-deposited CdTe . Rev. Phys. Appl. , 12 : 417
   Web of Science ®Google Scholar
• Zozime , A. , Sella , C. and Cohen-Solal , G. 1972 . Sputtering of CdxHg1−xTe films in mercury vapor plasma . Thin Solid Films , 13 : 373
   Web of Science ®Google Scholar
• Zozime , A. , Cohen-Solal , G. and Bailly , F. 1980 . Growth of thin films of CdxHg1−xTe solid solutions by cathode sputtering in a mercury vapor plasma . Thin Solid Films , 70 : 139
   Web of Science ®Google Scholar
• Cohen-Solal , G. , Sella , C. , Imhoff , D. and Zozime , A. 1974 . Structure and properties of CdxHg1−xTe films . Japn. J. Appl. Phys. , : 517 Pt. 1
   Web of Science ®Google Scholar
• Cornely , R. H. , Suchow , L. , Gabara , T. and Diodato , P. 1980 . rf triode-sputtered mercury cadmium telluride thin films . IEEE Trans. Electron Devices. , D-27 : 29
   Web of Science ®Google Scholar
• Corsi , C. 1974 . PbxSn1−xTe layers by rf multicathode sputtering . Appl. Phys. Letters , 24 : 137
   Web of Science ®Google Scholar
• Corsi , C. 1974 . PbxSn1−xTe layers by rf multicathode sputtering . J. Appl. Phys. , 45 : 3467
   Web of Science ®Google Scholar
• Corsi , C. , Fainelli , E. , Petrocco , G. , Vitals , G. , Campisano , U. , Foti , G. and Rimini , E. 1976 . Single crystal heteroepitaxial growth of PbxSn1−xTe films on germanium substrates by rf sputtering . Thin Solid Films. , 33 : 135
   Web of Science ®Google Scholar
• Krikorian , E. , Crisp , M. T. and Sneed , R. J. General Dynamics Technical Report AFML-TR-75–63. Available from Air Force Materials Laboratory, Wright Patterson Air Force Base, Ohio
   Google Scholar
• Francombe , M. H. 1964 . Crystal growth and orientation in sputtered films of bismuth telluride . Phil. Mag. , 10 : 989
   Google Scholar
• Hewig , G. H. and Bloss , W. H. 1977 . Technology of thin film solar cells . Thin Solid Films , 45 : 1
   Web of Science ®Google Scholar
• Potter , R. W. 1977 . An electrochemical investigation of the system copper-sulphur . Econ. Geol. , 72 : 1524
   Web of Science ®Google Scholar
• Armantrout , G. A. , Miller , D. E. , Vindelov , K. E. and Brown , T. G. 1979 . Formation of thin Cu2S (chalcocite) films using reactive sputtering techniques . J. Vac. Sci. Technol. , 16 : 212
   Web of Science ®Google Scholar
• Radler , K. , Frey , H. , Muller , W. , Schuller , K. H. and von Wienskowski , J. 1979 . Structural, electrical and optical properties of CuxS layers produced by reactive of sputtering . Thin Solid Films , 59 : 13
   Web of Science ®Google Scholar
• Jonath , A. D. , Anderson , W. W. , Thornton , J. A. and Cornog , D. G. 1979 . Copper sulfide films deposited by cylindrical magnetron reactive sputtering . J. Vac. Sci. Technol. , 16 : 200
   Web of Science ®Google Scholar
• Hwang , H. L. , Sun , C. Y. , Leu , C. Y. , Cheng , C. L. and Tu , C. C. 1978 . Growth of CuInS2 and its characterization . Rev. Phys. Appl. , 13 : 745
   Web of Science ®Google Scholar
• Hwang , H. L. , Cheng , C. L. , Liu , L. M. , Liu , Y. C. and Sun , C. Y. 1980 . Growth and properties of sputter deposited CuInS2 thin films . Thin Solid Films , 67 : 83
   Web of Science ®Google Scholar
• Piekoszewski , J. , Loferski , J. J. , Beulieu , R. , Beall , J. , Roessler , B. and Shewchun , J. 1980 . Rf sputtered CuInSe: thin films, Sol . Energy Maser. , 2 : 363
   Google Scholar
• Scholl , F. W. and Cory , E. S. 1974 . Preparation and properties of ZnGeAs2 . Mat. Res. Bull. , 9 : 1511
   Web of Science ®Google Scholar
• Shah , S. I. and Greene , J. E. unpublished
   Google Scholar
• Jones , H. 1973 . Splat cooling and metastable phases . Rep. Prog. Phys. , 36 : 1425
   Web of Science ®Google Scholar
• Poate , J. M. 1978 . Metastable alloy formation . J. Vac. Sci. Technol. , 15 : 1636 See, for example
   Web of Science ®Google Scholar
• White , C. W. and Preecy , P. S. , eds. 1980 . Laser and Electron Beam Processing of Materials , New York : Academic Press . See, for example, articles in
   Google Scholar
• Greene , J. E. , Cadien , K. C. , Lubben , D. , Hawkins , G. A. , Erikson , G. R. and Clarke , J. R. 1981 . Epitaxial Ge/GaAs heterostructures by scanned CW laser annealing of Ge layers on GaAs . Appl. Phys. Letters , 39 : 232
   Web of Science ®Google Scholar
• Noreika , A. J. and Francombe , M. H. 1974 . Preparation of nonequilibrium solid solutions of (GaAs)1−xSix . J. Appl. Phys. , 45 : 3690
   Web of Science ®Google Scholar
• Barnett , S. A. , Ray , M. A. and Greene , J. E. unpublished
   Google Scholar
• Cadien , K. C. and Greene , J. E. 1982 . Single phase polycrystalline metastable (GaSb)1−xGex alloys obtained by annealing amorphous mixtures: lon mixing effects during deposition . Appl. Phys. Letters , 40 : 329
   Web of Science ®Google Scholar
• Shah , S. I. , Cadien , K. C. and Greene , J. E. 1982 . GaSb-Ge pseudobinary phase diagram . J. Electronic Materials , 11 : 53
   Web of Science ®Google Scholar
• Zilko , J. L. and Greene , J. E. 1980 . Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. II. Phase stability . J. Appl. Phys. , 51 : 1560
   Web of Science ®Google Scholar
• Wood , E. C. E. and Joyce , B. A. 1978 . Tip doping effects in GaAs films grown by molecular beam epitaxy . J. Appl. Phys. , 49 : 4854
   Web of Science ®Google Scholar
• Rockett , A. , Drummond , T. , Greene , J. E. and Morkoc , H. in press . Sn segregation in MBE-grown GaAs . J. Appl. Phys. ,
   Google Scholar