10
Views
0
CrossRef citations to date
0
Altmetric
Short Papers

AIGaAs/GaAs V‐Groove channeled substrate buried heterostructure laser diodes

, &
Pages 311-316 | Received 06 Jun 1984, Accepted 03 Dec 1984, Published online: 04 May 2011

References

  • Ishikawa , H. , Takagi , N. , Ohsaka , S. , Hanamitsu , K. , Fujiwara , T. and Takusagawa , M. 1978 . “Mode‐Stabilized Separated Multiclad Layer Stripe Geometry GaAlAs Double Heterostructure Laser,” . Appl. Pkys. Lett. , 36 ( 7 ) : 520 – 522 .
  • Oron , M. , Tamari , N. and Shtrikman , H. 1982 . “Lasing Properties of InGaAsP Buried Heterojunction Lasers Grown on a Mesa Substrate,” . Appl. Phys. Lett. , 41 ( 7 ) : 609 – 611 .
  • Saito , K. and Ito , R. 1980 . “Buried‐Heterostructure AlGaAs Lasers,” . IEEE J. Quantum Electron. , QE‐16 ( 2 ) : 205 – 215 .
  • Kuroda , T. , Nakamura , M. , Aiki , K. and Umeda , J. 1978 . “Channeled‐Substrate‐Planar Structure AlxGa1–xAs Lasers: an Analytical Waveguide Study,” . Appl. Opt. , 17 ( 20 ) : 3264 – 3267 .
  • Yamamoto , S. , Hayashi , H. , Hayakawa , T. , Miyauchi , N. , Yano , S. and Hijikata , T. 1983 . “High Optical Power CW Operation in Visible Spectral Range by Window V‐channeled Substrate Inner Stripe Lasers,” . Appl. Phys. Lett. , 42 ( 5 ) : 406 – 408 .
  • Hayakwa , T. , Miyauchi , N. , Yamamoto , S. , Hayashi , H. , Yano , S. and Hijikata , T. 1982 . “Highly Reliable and Mode‐Stabilized Operation in V‐channeled Substrate Inner Stripe Lasers on p‐GaAs Substrate Emitting in the Visible Wavelength Region,” . J. Appl. Phys. , 53 ( 11 ) : 7224 – 7234 .
  • Tsukada , T. 1974 . “GaAs‐Ga1–xAlxAs Buried‐Heterostructure Injection Lasers,” . J. Appl. Phys. , 45 ( 11 ) : 4899 – 4906 .
  • Kirkly , P. A. and Thompsom , G. H. B. 1976 . “Channeled Substrate Buried Heterostructure GaAs‐(GaAl)As Injection Lasers,” . J. Appl. Phys. , 47 ( 10 ) : 4578 – 4589 .
  • Adachi , S. and Kawagnchi , H. 1981 . “Chemical Etching Characteristics of (001) InP,” . J. Electrochem. Soc. , 128 ( 6 ) : 1342 – 1349 .
  • Botez , D. , Tsang , W. T. and Wang , S. 1976 . “Growth Characteristics of GaAs‐Ga1–xAlxAs Structure Fabricated by Liquid‐Phase Epitaxy over Preferentially Etched Channels,” . Appl. Phys. Lett. , 28 ( 4 ) : 234 – 236 .
  • Casey , H. C. and Panish , M. B. 1978 . Heterostructure Lasers , 80 – 90 . New York, N.Y. : Academic Press . Part B
  • Liou, J. W., (private communication)
  • Casey , H. C. and Panish , M. B. 1978 . Heterostructure Lasers , 158 – 161 . New York, N.Y. : Academic Press . Part A
  • Sze , S. M. 1981 . Physics of Semiconductor Devices, , 2nd Edition , 27 – 30 . New York, N.Y. : John Wiley and Sons .
  • Tsukada , T. 1976 . “Liquid‐Phase Epitaxial Growth of Ga1–x,AlxAs on the Side and Top Surfaces of Air‐Exposed Ga1–y,AlyAs,” . Appl. Phys. Lett. , 28 ( 12 ) : 697 – 699 .
  • Ishikawa , H. , Imai , H. , Tanahashi , T. , Nishitani , Y. and Takusagama , M. 1981 . “V‐Grooved Substrate Buried‐Heterostructure InGaAsP/ InP Laser,” . Electron: Lett. , 17 ( 13 ) : 465 – 466 .
  • Gottsmann , C. W. , Marschall , P. and Petermann , K. 1981 . “Criteria for Desigining V‐Groove Lasers,” . IEEE J. Quantum Electron. , QE‐17 ( 5 ) : 756 – 758 .
  • Chinone , N. 1977 . “Nonlinearity in Power‐Output‐Current Characteristics of Stripe‐Geometry Injection Lasers,” . J. Appl. Phys. , 48 ( 8 ) : 3237 – 3243 .
  • Ishikawa , H. , Yano , M. and Takusagawa , M. 1982 . “Mechanism of Asymmetric Longitudinal Mode Competition in InGaAsP/InP Lasers,” . Appl. Phys. Lett. , 40 ( 7 ) : 553 – 555 .
  • Hakki , B. W. 1973 . “Carrier and Gain Spatial Profiles in GaAs Stripe Geometry Lasers,” . J. Appl. Phys. , 44 ( 11 ) : 5021 – 5028 .

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.