Relationship between mobile charges and interface trap states in silicon mos capacitors

References

• Aitken , J.M. and Young , D.R. 1976 . “Electron Trapping by Radiation‐Induced Charge in MOS Devices,” . J. Appl. Phys. , 47 : 1196 – 1198 .
   Google Scholar
• Berglund , C.M. and Powell , R.J. 1971 . “Photo‐injection Into SiO2: Electron Scattering in the Image Force Potential Well,” . J. Appl. Phys. , 42 : 573 – 579 .
   Google Scholar
• Crowley , J.L. , Hoffman , H.J. and Stultz , T.J. 1982 . “A Model for Field‐Sensitive Interface States,” . J. Appl. Phys. , 53 : 6919 – 6926 .
   Google Scholar
• Deal , B.E. , Sklar , M. , Grove , A.S. and Snow , E.H. 1967 . “Characteristics of the Surface State Charge (Qss) of Thermally Oxidized Silicon,” . J. Electrochem. Soc. , 114 : 266 – 274 .
   Web of Science ®Google Scholar
• Deal , B. E. 1974 . “The Current Understanding of Charges in the Thermally Oxidized Silicon Structure,” . J. Electrochem. Soc. , 121 : 198C – 205C .
   Web of Science ®Google Scholar
• DiMaria , D. J. , Aitken , J. M. and Young , D. R. 1976 . “Capture of Electrons Into N+ a‐Related Trapping Sites in the SiO2 Layer of MOS Structure at 77°K,” . J. Appl. Phys. , 47 : 2740 – 2743 .
   Web of Science ®Google Scholar
• Eitan , B. , Frohamn‐Bentchkowsky , D. , Shappir , J. and Balog , M. 1982 . “Electron Trapping in SiO2‐An Injection Mode Dependent Phenomenon,” . Appl. Phys. Lett. , 40 : 523 – 525 .
   Google Scholar
• Grove , A. S. 1967 . Physics and Technology of Semiconductor Devices , New York : J. Wiley and Sons . Chapter 12
   Google Scholar
• Hamasaki , M. 1982 . “Generation Kinetics of Oxide Charges and Surface States during Oxidation of Silicon,” . Solid State Electron. , 25 : 205 – 211 .
   Google Scholar
• Nicollian , E. H. and Goetzberger , A. 1967 . “The Si‐SiO2 Interface‐Electrical Properties as Determined by the Metal‐Insulator‐Silicon Conductance Technique,” . Bell Syst. Technol. , 46 : 1055 – 1133 .
   Google Scholar
• Nicollian , E. H. and Berglund , C. N. 1970 . “Avalanche Injection of Electrons into Insulating SiO2Using MOS Structure,” . J. Appl. Phys. , 41 : 3052 – 3057 .
   Web of Science ®Google Scholar
• Sah , C. T. , Sun , Y. C. and Tzou , J. T. 1982 . “Generation Annealing Kinetics of Interface States on Oxidized Silicon Activated by 10.2‐eV Photohole Injection,” . J. Appl. Phys. , 53 : 8886 – 8893 .
   Google Scholar
• Sah , C. T. , Sun , Y. C. and Tzou , J. T. 1983 . “Generation‐Annealing Kinetics and Atomic Models of A Compensating Donor in the Surface Space Charge Layer of Oxidized Silicon,” . J. Appl. Phys. , 54 : 944 – 956 .
   Google Scholar
• Sinha , A. K. , Levinstein , H. J. , Adda , L. P. , Fules , E. N. and Povilonis , E. I. 1978 . “Effect of High‐Temperature H2‐Anneals on the Slow‐Trapping Instability of MOS Structures,” . Solid State Electron , 21 : 531 – 535 .
   Google Scholar
• Snow , E. H. , Grove , A. S. , Deal , B. E. and Sah , C. T. 1965 . “Ion Transport Phenomena in Insulating Films,” . J. Appl. Phys. , 36 : 1664 – 1673 .
   Web of Science ®Google Scholar
• Sze , S. M. 1981 . Physics of Semiconductor Devices , 2nd edition , New York : J. Wiley and Sons . Chapter 7
   Google Scholar
• Williams , R. 1965 . “Photoemission of Electrons from Silicon Into Silicon Dioxide,” . Phys. Rev. , 140 : A569 – 575 .
   Google Scholar
• Wu , J. K. , Lyon , S. A. and Johnson , W. C. 1983 . “Temperature and Field Dependence of the Generation of Interface States in the Si‐SiO2System after High‐Field Stress,” . Appl. Phys. Lett. , 42 : 585 – 587 .
   Google Scholar