145
Views
5
CrossRef citations to date
0
Altmetric
Articles

Electrical analyses of charge trapping and stress-induced leakage current in CeO2 gate dielectric

&

References

  • Aresu, S., W. De Ceuninck, R. Degraeve, B. Kaczer, G. Knuyt, and L. De Schepper. 2005. “Understanding Oxide Degradation Mechanisms in Ultra-Thin SiO2 through High-Speed, High-Resolution in-Situ Measurements.” Microelectronic Engineering 80(1): 182–185.
  • Blauwe, J. D., J. V. Houdt, D. Wellekens, G. Groeseneken, and H. E. Maes. 1998. “SILC-Related Effects in Flash E Prom’s – Part I: A Quantitative Model for Steady-State SILC.” IEEE Transactions on Electron Devices 45(8): 1745–1750.
  • Chatterjee, S., Y. Kuo, J. Lu, J. Y. Tewg, and P. Majhi. 2006. “Electrical Reliability Aspects of HfO2 High-k Gate Dielectrics with TaN Metal Gate Electrodes under Constant Voltage Stress.” Microelectronics Reliability 46(1): 69–76.
  • Chiu, F. C., S. Y. Chen, C. H. Chen, H. W. Huang, and H. L. Hwang. 2009. “Interfacial and Electrical Characterization in Metal-Oxide-Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric.” Japanese Journal of Applied Physics 48(4): 04C014-1–04C014-4.
  • Chiu, F. C. 2010. “Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film.” IEEE Transactions on Electron Devices 57(10): 2719–2725.
  • Chiu, F. C., and C. M. Lai. 2010. “Optical and Electrical Characterizations of Cerium Oxide Thin Films.” Journal of Physics D: Applied Physics 43(7): 075104-1–075104-5.
  • Crupi, F., R. Degraeve, A. Kerber, D. H. Kwak, and G. Groeseneken. 2004. “Correlation between-Induced Leakage Current (SILC) and the HfO2 Bulk Trap Density in a SiO2/HfO2 Stack.” In Proceedings of the International Reliability Physics Symposium, Phoenix, AZ, 25–29 April 2004: 181–186.
  • Evangelou, E. K., M. S. Rahman, and A. Dimoulas. 2009. “Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (1 0 0) Substrates.” IEEE Transactions on Electron Devices 56(3): 399–407.
  • Guo, S., H. Atwin, S. N. Jacobsen, K. Jkrendahl, and U. Helmersson. 1995. “A Spectroscopic-Ellipsometry Study of Cerium Dioxide Thin Films Grown on Sapphire by Rf Magnetron Sputtering.” Journal of Applied Physics 77(10): 5369–5376.
  • Gusev, E. P., and C. P. D’Emic. 2003. “Charge Detrapping in HfO2 High-k Gate Dielectric Stacks.” Applied Physics Letters 83(25): 5223–5225.
  • Houssa, M., and A. Stesmans. 2000. “Charge Trapping in Very Thin High-Permittivity Gate Dielectric Layers.” Applied Physics Letters 77(9): 1381–1383.
  • Kao, K. C., and W. Hwang. 1981. Electrical Transport in Solids. London: Pergamon.
  • Kumar, A., M. V. Fischetti, T. H. Ning, and E. Gusev. 2003. “Hot-Carrier Charge Trapping and Trap Generation in HfO2 and Al2O3 Field-Effect Transistors.” Journal of Applied Physics 94(3): 1728–1737.
  • Lin, C. Y., D. Y. Lee, S. Y. Wang, C. C. Lin, and T. Y. Tseng. 2008. “Reproducible Resistive Switching Behavior in Sputtered CeO2 Polycrystalline Films.” Surface and Coatings Technology 203(5–7): 480–483.
  • McKenna, K., and A. Shluger. 2009. “The Interaction of Oxygen Vacancies with Grain Boundaries in Monoclinic HfO2.” Applied Physics Letters 95(22): 222111-1–222111-3.
  • McPherson, J., J. Y. Kim, A. Shanware, and H. Mogul. 2003. “Thermochemical Description of Dielectric Breakdown in High Dielectric Constant Materials.” Applied Physics Letters 82(13): 2121–2123.
  • McPherson, J. W., R. B. Khamankar, and A. Shanware. 2000. “Complementary Model for Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics.” Journal of Applied Physics 88(9): 5351–5359.
  • Moazzami, R., and C. Hu. 1992. “Stress-Induced Current in Thin Silicon Dioxide Films.” International Electron Devices Meeting, Technical Digest, San Francisco, CA, 13–16 December 2004: 139–142.
  • Naruke, K., S. Taguchi, and M. Wada. 1988. “Stress Induced Leakage Current Limiting to Scale Down EEPROM Tunnel Oxide Thickness.” International Electron Devices Meeting, Technical Digest, San Francisco, CA, 11–14 December 1988: 424–427.
  • Nicollian, E. H., and J. R. Brews. 1982. MOS Physics and Technology. New York: Wiley.
  • Nigam T., R. Degraeve, G. Groeseneken, M. M. Heyns, and H. E. Maes. 1999. “A Fast and Simple Methodology for Lifetime Prediction of Ultra-thin Oxides.” In Proceedings of the International Reliability Physics Symposium, San Diego, CA, 22–25 March 1999: 381–388.
  • Nishikawa, Y., N. Fukushima, N. Yasuda, K. Nakayama, and S. Ikegawa. 2002. “Electrical Properties of Single Crystalline CeO2 High-k Gate Dielectrics Directly Grown on Si (1 1 1).” Japanese Journal of Applied Physics 41(4B): 2480–2483.
  • Ricco, B., G. Gozzi, and M. Lanzoni. 1998. “Modeling and Simulation of Stress-Induced Leakage Current in Ultrathin SiO2 Films.” IEEE Transactions on Electron Devices 45(7): 1554–1560.
  • Samanta, P., C. L. Cheng, Y. J. Lee Chan, M., and N. Raghavan. 2009. “Electrical Stress-Induced Charge Carrier Generation/Trapping Related Degradation of HfAlO/SiO2 and HfO2/SiO2 Gate Dielectric Stacks.” Journal of Applied Physics 105(12): 124507-1–124507-8.
  • Shubhakar, K., K. L. Pey, S. S. Kushvaha, S. J. O’Shea, M. Bosman, and H. Iwai. 2011. “Grain Boundary Assisted Degradation and Breakdown Study in Cerium Oxide Gate Dielectric Using Scanning Tunneling Microscopy.” Applied Physics Letters 98(7): 072902-1–072902-3.
  • Skorodumova, N. V., R. Ahuja, S. I. Simak, I. A. Abrikosov, B. Johansson, and B. I. Lundqvist. 2001. “Electronic, Bonding, and Optical Properties of CeO2 and Ce2O3 from First Principles.” Physical Review B 64(1): 115108-1–115108-9.
  • Sun, X., B. Sun, L. Liu, N. Xu, X. Liu, R. Han, and T. P. Ma. 2009. “Resistive Switching in CeOx Films for Nonvolatile Memory Application.” IEEE Electron Device Letters 30(4): 334–336.
  • Tye, L., N. A. El-Masry, T. Chikyow, P. McLarty, and S. M. Bedair. 1994. “Electrical Characteristics of Epitaxial CeO2 on Si(111).” Applied Physics Letters 65(24): 3081–3083.
  • Wang, J. C., Y. P. Hung, C. L. Lee, and T. F. Lei. 2004. “Improved Characteristics of Ultrathin CeO2 by Using Postnitridation Annealing.” Journal of the Electrochemical Society 151(2): F17–F21.
  • Yang, S. M., C. H. Chien, J. J. Huang, T. F. Lei, M. J. Tsai, and L. S. Lee. 2007. “Cerium Oxide Nanocrystals for Nonvolatile Memory Applications.” Applied Physics Letters 91(26): 262104-1–262104-3.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.