Recent Development in InGaAs based Millimeter Wave HEMTs

REFERENCES

• M Ono, M Saito, T Yoshitomi, C Fiegna, T Ohguro, H S Momose & H Iwai, Fabrication of sub-50nm gate-length n-metal-oxide-semiconductor field effect transistors and their electrical characteristics, J Vac Sc Technol B, vol 13, no 4, pp 1740–1743, July/August 1995.
   Web of Science ®Google Scholar
• J C Bean, Materials and Technologies, Chap 1, High Speed Semiconductor Devices, S M Sze (Ed), John Wiley and Sons Inc, New York, pp 13–55, 1990.
   Google Scholar
• M A Hollis & R A Murphy, Homogeneous Field Effect Transistors, Chap 4, Ibid, pp 211–281, 1990.
   Google Scholar
• D Fritzsche, Heterostructures in MODFETs, Solid State Electronics, vol 30, no 11, pp 1183–1195, Nov 1987.
   Web of Science ®Google Scholar
• P C Chao, A Swanson, A Brown, U Mishra, F Ali & C Yuen, HEMT Devices and Circuit Applications, Chap 3, in HEMTs and HBTs: Devices, Fabrication and Circuits, F Ali and A Gupta (Eds), Artech House, Boston, pp 77–190, 1991.
   Google Scholar
• S J Pearton & N J Shah, Heterostructure Field Effect Transistors, Chap 5, in High Speed Semiconductor Devices, S M Sze (Eds), John Wiley and Sons Inc, New York, pp 283–334, 1990.
   Google Scholar
• A K Gupta, J A Higgins & C-P Lee, High electron mobility transistors for millimeter wave and high speed digital IC applications, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, SPIE, vol 795, pp 68–90, 1987.
   Google Scholar
• S Adachi, Heterojunctions of InGaAs and band offsets, Chap 3, in Properties of Lattice Matched and Strained Indium Gallium Arsenide, P Bhattacharaya (Ed), emis Data review Series No. 8, Inspec, IEE, London, pp 84–96, 1993.
   Google Scholar
• H Kroemer, Critique of Two Recent Theories of Heterojunction Line-ups, IEEE Electron Dev Lett, vol EDL-4, no 2, pp 25–26, February 1983.
   Web of Science ®Google Scholar
• J L Pelouard, R Castagne & P Hesto, Monte-Carlo study of ballistic transport in heterojunction bipolar transistors (HJBTs) and in high electron mobility transistors (HEMTs), Integrated Circuits, SPIE, vol 795, p 41–57, 1987.
   Google Scholar
• J K Luo, H Ohno, K Matsuzaki & H Hasegawa, Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AIGaAs/GaInAs/GaAs Pseudomorphic Structures, Jap J App Phys, vol 27, no 10, pp 1831–1840, October 1988.
   Web of Science ®Google Scholar
• S Takamiya, N Yoshida, N Hayafuji, T Sonoda & S Mitsui, Overview of Recent Development of HEMTs in the mm-Wave Range, Solid State Electronics, vol 38, no 9, pp 1581–1588, 1995.
   Web of Science ®Google Scholar
• N Chand, LPE Growth of InGaAs, Chap 8, in Properties of Lattice Matched and Strained Indium Gallium Arsenide, P Bhattacharya (Ed), emis Data review Series no 8, Insepc, IEE, London, pp 222–225, 1993.
   Google Scholar
• R F Karlicek Jr, Chloride Vapour Phase Epitaxy Techniques, Ibid, pp 234–236, 1993.
   Google Scholar
• N Chand, MBE Growth of In0.53Ga0.47 As, Ibid, pp 226–227, 1993.
   Google Scholar
• N Chand, MBE growth of Strained InxGa1–xAs on GaAs Substrates, Ibid, pp 227–229, 1993.
   Google Scholar
• D Schmitz, Low Pressure MOVPE of InP Based Compound Semiconductors, Chap 4, in Indium Phosphide and Related Materials, A Katz (Ed), Artech House, Boston, pp 103–153, 1992.
   Google Scholar
• C R Abernathy, Growth of InP and Related Compounds by GSMBE and MOMBE, Chap 6, Ibid, pp 177–210, 1992.
   Google Scholar
• T Suntola, Atomic Layer Epitaxy, Thin Solid Films, vol 216, pp 84–89, 1992.
   Web of Science ®Google Scholar
• W G Jeong, E P Menu & P D Dapkus, Atomic Layer Epitaxy of GaAs and InAs, Mat Res Soc Symp Proc, vol 145, pp 163–168, 1989.
   Google Scholar
• H Shimawaki, Y Kato & A Usui, InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy, Mat Res Soc Symp Proc, vol 160, pp 395–400, 1990.
   Google Scholar
• S Goto, J Ishizaki, T Fukui & H Hasegawa, Atomic Layer Epitaxy Growth of GaAs/InAs Superlattice Structures, Intl Symp, GaAs and Related Compounds, Karuizawa, Inst Phys Conf Ser no 129, Chap 3, pp 139–144, 1992.
   Google Scholar
• C A Tran, R Ares, S P Watkins, G Sorensen & Y Lacroix, Atomic Layer Epitaxy of InAs Using Tertiarybutylarsine, J Electronic Materials, vol 24, no 11, pp 1597–1603, 1995.
   Web of Science ®Google Scholar
• S M Bedair, M A Tischler, T Katsuyama & N A EI-Masry, Atomic Layer Epitaxy of III-V Binary Compounds, App Phys Lett, vol 47, no 1, pp 51–53, 1 July 1985.
   Web of Science ®Google Scholar
• D C Streit, T R Block, M Wojtowicz, D Pascua, R Lai, G I Ng, Po-Hsin Liu & K L Tan, Graded-channel InGaAs-InAlAs-InP High Electron Mobility Transistors, J Vac Sc Technol B, vol 13, no 2, pp 774–776, 1995.
   Web of Science ®Google Scholar
• A M Kusters, R Wuller, H J Geelen, A Kohl & K Heime, Sub-half-micrometer Pseudomorphic InP/InxGa1–xAs/InP HEMTs (0.74 ≤ x ≤ 0.81) with Very High ft Values, IEEE Electron Device Lett, vol 16, no 9, pp 396–398, 1995.
   Web of Science ®Google Scholar
• T Nakayama, H Miyamoto, E Oishi & N Samoto, High Electron Mobility 18300 cm2/V.s in the InAlAs/InGaAs Pseudomorphic Structure obtained by Channel Indium Composition Modulation, J Electron Mater, vol 25, no 4, pp 555–558, 1996.
   Web of Science ®Google Scholar
• J Dickmann, S Schildberg, K Riepe, B E Maile & A Schurr, Breakdown Mechanisms in Pseudomorphic InAlAs/InxGa1–xAs High Electron Mobility Transistors on InP II: On-State, Jap J App Phys I, vol 34, no 4A, pp 1805–1808, 1995.
   Web of Science ®Google Scholar
• W Klein, G Bohm, H Heiss, S Krauso, D Xu, R Semerad, G Trankle & G Weimann, Molecular Beam Epitaxial Growth of Pseudomorphic InAlAs/InGaAs High Electron Mobility Transistors with High Cut-off Frequencies, J Crystal Growth, vol 150, no 1-4, pp 1252–1255, 1995.
   Web of Science ®Google Scholar
• K Y Hur, R A Mc Taggart, B W Le Blanc, W E Hoke, P J Lemonias, A B Miller, T E Kazior & L M Aucoin, Double Recessed AlInAs/InGaAs/InP HEMTs with High Breakdown Voltages, IEEE GaAs IC Symp, 17th Annual Technical Digest, pp 89–92, 1995.
   Google Scholar
• T Hwang, T M Kao, D Glajchen & P Chye, Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in Low-Cost Plastic Packaging for DBS Applications, Elect Lett, vol 32, no 2, pp 141–143, 1996.
   Web of Science ®Google Scholar
• S Kimura, Y Imai, Y Umeda & T Enoki, 0-90 GHz InAlAs/InGaAs/InP HEMT Distributed Baseband Amplifier IC, Elect Lett, vol 31, no 17, pp 1430–1431, August 1995.
   Web of Science ®Google Scholar
• H Wang, G S Dow, M Aust, K W Chang, R Lai, M Biedenbender, D C Streit & B R Allen, A Novel W-Band Monolithic Push-Pull Power Amplifier, IEEE GaAs IC Symp, 16th Annual Tech Digest, pp 92–95, 1994.
   Google Scholar
• Y C Chen, C S Wu, C K Pao, M Cole, Z Bardai, L H Hou & T A Midford, High PAE Pseudomorphic InGaAs/AlGaAs HEMT X-band High Power Amplifiers, IEEE GaAs IC Symp, Mth Annual Tech Digest, pp 281–283, 1995.
   Google Scholar
• J M Schellenberg, A high-voltage Ka-band power MMIC with 41% Efficiency, Ibid, pp 284–287, 1995.
   Google Scholar
• M Camiade, C Dourlens, V Serru, P Savary & J C Blanc, Highly Integrated and Compact W-band Front End for Radiometry Applications, Ibid, pp 230–237, 1995.
   Google Scholar