Summary of Advances in High Frequency Transistors, Optoelectronic Devices and CMOS Circuits Fabricated using GeSi Strained Layers

REFERENCES

• S C Jain, J R Willis & R Bullough, A Review of theoretical and experimental work on the structure of strained layers and superlattices with Extensive Biblography, Advances in Physics, vol 39, pp 127–190, 1990.
   Web of Science ®Google Scholar
• S C Jain & W Hayes, Structure, properties and applications of GexS1–x. strained layers and super-lattices, Semiconductor Science and Technology, vol 6, pp 547–576, 1991.
   Web of Science ®Google Scholar
• S C Jain, J Poortmans, S S Iyer, J J Loferski, J Nijs, R Mertens & R Overstraeten, Electrical and optical bandgaps of GexS1–x strained layers, IEEE Transactions of Electron Devices, vol 40, pp 2338–2343, 1993.
   Web of Science ®Google Scholar
• S C Jain, Germanium-silicon Strained Layers and Heterostructures, Advances in Electronics and Electron Physics series, (Supplement 24), Academic Press, Boston 1994.
   Google Scholar
• S C Jain, T J Gosling, J R Willis, D H J Totterdell & R Bullough, A new study of critical layer thickness, stability and strain relaxation in pseudomorphic GexS1–x strained epilayers, Philos Mag A, vol 65, pp 1151–1167, 1992.
   Web of Science ®Google Scholar
• J Poortmans, S C Jain & J Nijs, A review of GeSi Double Heterostructure Bipolar Transistors, chapter in the book edited by J Nijs, Adam Hilgers, IOP Publishing House, London 1994.
   Google Scholar
• S C Jain, H E Maes, K Pinardi & I De Wolf, Stresses and strains in lattice-mismatched stripes, quantum wires, quantum dots and substrates in Si technology, J Appl. Phys, vol 79, pp 6145–6165, 1996.
   Web of Science ®Google Scholar
• S C Jain, K Pinardi & H E Maes, Stresses in strained GeSi stripes and quantum structures: calculation using finite element method and determination using micro-Raman and other measurements, Invited paper in Spring MRS meeting, April 8–12, 1996, San Francisco.
   Google Scholar
• T J Gosling, S C Jain & A H Harker, The Kinetics of strains relaxation in lattice-mismatched semiconductor layers, Phys Stat Sol (a), vol 146, pp 713–734, 1994.
   Web of Science ®Google Scholar
• U König & J Hersener, Needs of low thermal budget processing in SiGe Technology, Proc of Gettering and Defect Engineering in Semiconductor Technology Conf. Eds.: H Richter, M Kittler and C Claeys, Solid State Phenomena 47–48, (SCITEC Publications, Switzerland 1996), pp 503–508.
   Google Scholar
• S C Jain, A H Harker, A Atkinson & K Pinardi, Edge induced stress and train in stripe films and substrates: A 2D finite element calculation, J Appl Phys, vol 78, pp 1630–1637, 1995.
   Web of Science ®Google Scholar
• S C Jain, B Deitrich, H Richter, A Atkinson & A H Harker, Stresses in strained GeSi stripes: Calculation and determination from Raman measurements, Phys Rev, B 52, pp 6247–6253, 1995.
   Web of Science ®Google Scholar
• K Ismail, Correlation between dislocations and electron transport properties, Proc of Gettering and Defect Engineering in Semiconductor Technology Conf, Eds.: H. Richter, M. Kittler and C. Claeys, Solid State Phenomena 47–48, (SCITEC Publications, Switzerland 1996).
   Google Scholar
• K Ismail, S F Nelson, J O Chu & B S Meyserson, Electron transport properties of Si/SiGe heterostructures: Measurements and device implications, Appl Phys Lett, vol 63, pp 660–662, 1993.
   Web of Science ®Google Scholar
• K Ismail, J O Chu & B S Meyserson, High hole mobility in SiGe alloys for device applications, Appl Phys Lett, vol 64, pp 3124–3126, 1994.
   Web of Science ®Google Scholar
• A Schüppen, A Gruhle, U Erben, H Kibbel & U Köing, Multi emitter finger SiGe-HBT with fmax up to 120 GHz, Tech Dig IEDM, vol 94, pp 377–380, 1994.
   Google Scholar
• A Sadek, K Ismail, M A Armstrong, D A Antoniadis & F Sterm, Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors, IEEE Trans Electron Device, vol 43, pp 1224–1232, 1996.
   Web of Science ®Google Scholar
• SC Jain, M Willander & H Maes, Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors. Semiconductor Sci and Technol, vol 11, pp 641–671, 1996; Erratum Semiconductor Sei. and Technol, vol 11, p 975, 1996.
   Web of Science ®Google Scholar
• B Dietrich, E Bugiel, H Frankenfeldt, A H Harker, U Jagdhold, B Tillack & A Wolf, International Conf Modulated Semicond, July 10–14, 1995 Madrid, (to be published in Solid State Electronics).
   Google Scholar
• B Dietrich, E Bugiei, H Frankenfeldt, Y S Tang, C M Sotomayor, Tarres H-P Zeindl & A Wolff, Gadest 95, Proc of Gettering and Defect Engineering in Semiconductor Technology Conf Eds.: H, Richter, M. Kittler & C Claeys, Solid State Phenomena 47–48, (SCITEC Publications, Switzerland 1996), pp 535–540.
   Google Scholar
• K Pinardi, B Dietrich & S C Jain, unpublished.
   Google Scholar
• Y S Tang & C M Sotomayor Torres, Gadest 95, Proc of Gettering and Defect Engineering in Semiconductor Technology Conf Eds.: H Richter, M Kittler, C Claeys, Solid State Pehnomena 47–48, (SCITEC Publications, Switzerland 1996), pp 613–618.
   Google Scholar