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IETE Journal of Research Volume 8, 1962 - Issue 1

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Original Articles

Control Characteristics of 4-Layer Silicon Controlled Rectifier (SCR)

K. K. BoseIndian Institute of Technology, Kharagpur.

Pages 36-41 | Received 23 Dec 1961, Published online: 21 Aug 2015

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https://doi.org/10.1080/03772063.1962.11486327

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Electronics, Engineering Edition (March 1958), pp. 52–55.
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Baker, A. N., Goldey, J. M. & Ross, I. M., I.R.E. Wescon Convention Record, Part 3, 43 (1959).
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Mackintosh, I. M., “Three-terminal p-n-p-n transistor switches”, I.R.E. Trans, on Electron Devices, 5 (Jan. 1958).
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