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Original Articles

Evaluation of Device Geometry and Performance Characteristics of Semiconductor Devices from Charge Control Parameters

(Assoc. Member) & (Grad. Member)
Pages 283-298 | Published online: 21 Aug 2015

REFERENCES

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  • Ebers, J. J. & Moll, J. L., “Large signal behaviour of junction transistors”, Proc. I.R.E., 42 (Dec. 1954), 1761–72.
  • Kuno, H. J., “Analysis and characterization of p-n junction diode switching”, I.E.E. Trans., ED-11 (1) (Jan. 1964).
  • Laderhandler & Giacalatto, “Measurement of minority carrier life-time and surface effects in junction diodes”, Proc. I.R.E., 43 (April 1955), 477–83.
  • Sparkes, J. J., “The measurement of transistor transient switching parameters”, Proc. I.E.E., 106B (Suppl. 15) (May 1959), 562.
  • Nanavati, R. P., “An introduction to semiconductor electronics” (McGraw-Hill Book Co. Inc.), 1963, 292.

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