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IETE Journal of Research Volume 12, 1966 - Issue 9
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Original Articles

On Some Physical Parameters of Uniform Base Junction Transistors

G. R. Mohan RaoElectronics Research Laboratories, Physics Department, Andhra University, Waltair, India.
(Non-Member) &
B. Ramachandra RaoElectronics Research Laboratories, Physics Department, Andhra University, Waltair, India.
(Non-Member)
Pages 484-489 | Received 23 Apr 1966, Published online: 21 Aug 2015

REFERENCES

  • Evans, D. M., “Measurements on alloy type germanium transistors and their relation to theory”, J. Electronics, March 1956.
  • Pritchard, R. L., “Frequency variation of junction transistor parameters”, Proc. Inst. Radio Engrs, May 1954.
  • Deb, S. & Daw, A. N., “Determination of physical parameters and geometry of junction transistors”, Proc. I.E.E., March 1960.
  • Rao, K. J. M. & Rao, B. R., “Determination of physical parameters of junction transistors”, J. Inst. Telecom. Engrs, 12 (2) (1966), 48–54.
  • Rao, G. R. M. & Rao, B. R., “Determination of some of the physical parameters of alloy junction transistors”, J. Inst. Telecom. Engrs, 12 (6) (1966), 334–43.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 166.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 279.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 302.
  • Gartner, W: W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 111.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 303.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 171.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 170.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 30.
  • Gartner, W. W., “Transistors: Principles, design and application”, Van Nostrand Series, p. 263.
  • Early, J. M., “Effects of space charge layer widening in junction transistors”, Proc. I.R.E., November 1952.
  • Gartner, W. W., Hanel, R., Stampfl, R. & Caruso, F., “Current amplification factor of a junction transistor as a function of emitter current and junction temperature”, Proc. I.R.E., Nov. 1958.

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