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IETE Journal of Research Volume 20, 1974 - Issue 8

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Original Articles

Magnetic Sensitivity of Junction Field Effect Transistors with Uniform Channel Current Density

T. Siva RamNaval Science and Technological Laboratory, Visakhapatnam-3.

B. Ramachandra RaoElectronics Research Laboratories, Physics Department, Andhra University, Waltair, India.

Pages 419-420 | Received 13 Apr 1973, Published online: 21 Aug 2015

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https://doi.org/10.1080/03772063.1974.11487432

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REFERENCES

Gallahger (R C) and Corak (W S). A metal oxide semi conductor (MOS) Hallelement. Solid State Electronics. 9, 5, 1966; 571–580.
Web of Science ®Google Scholar
Grove (A S). Physics and Technology of Semiconductor Devices. 1967 John Wiley and Sons (INC) New York, 243–257.
Google Scholar
Mohan Rao (G R) and Carr (W N). Magnetic Sensitivity of a MAGFET of uniform channel current density. Solid State Electronics, 14, 10, 995–1001.
Web of Science ®Google Scholar

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