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IETE Journal of Research Volume 21, 1975 - Issue 9
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Original Articles

Fabrication of GaP Light Emitting Diodes by LPE Technique

B. L. SharmaSolidstate Physics Laboratory, Delhi110 007.
&
S. N. MukerjeeSolidstate Physics Laboratory, Delhi110 007.
Pages 479-481 | Received 19 Nov 1974, Published online: 11 Jul 2015

REFERENCES

  • NUESE (CJ), KRESSEL (H) and LADANY (I). Light-emitting diodes and semiconductor materials for displays. J. Vac. Sci. Technology. 10, 5; 1973; 772–88.
  • BERGH (AA) and DEAN (PJ). Light-emitting diodes. Proc. IEEE. 60, 2; 1972; 156–223.
  • SOLOMON (R) and DEFEVERE (D). Efficiency shift in very high efficiency GaP (Zn-0) diodes. Appl. Phys. Letters. 21, 6; 1972; 257–60.
  • HACKETT (WH), SAUL (RH), VERLEUR (HW) and BASS (SJ). High efficiency red-emitting GaP diodes grown by single epitaxy on Solution-grown (n=6%) and Czochralski (n=2%) substrates. Appl. Phys. Letters. 16, 12; 1970; 477–79.
  • SAUL (RH), ARMSTRONG (J) and HACKETT (WH). GaP red electroluminescent diodes with an external quantum efficiency of 7%. Appl. Phys. Letters. 15, 7; 1969; 229–31.
  • SAUL (RH) and HACKETT (WH). Distribution of impurities in Zn, 0-doped GaP liquid phase epitaxy layers. J. Electrochem. Society. 117, 7; 1970; 921–24.
  • KASAMI (A), NAITO (M) and TOYAMA (M). Gallium phosphide monolithic display with low drive power. IEEE Trans. Electron Devices. ED-19, 10; 1972; 1093–97.
  • LORENZ (MR) and PILKUHN (M). Preparation and pro perties of Solution-grown epitaxial p-n junctions in GaP. Appl. Physics. 37, 11; 1966; 4094–4102.
  • CODERRE (WM). Technical Bulletin 40013. 1970. Micro systems International Ltd. Ottawa, Canada. P 1–10.

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