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IETE Journal of Research Volume 24, 1978 - Issue 12
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Original Articles

Study of D. C. Characteristics of Si, Ge and GaAs p-i-n Avalanche Diodes by a New Non-iterative Method

R. GhoshCentre of Advanced Study in Radio Physics & Electronics (CAS Building), 1, Girish Vidyaratna Lane Calcutta700009.View further author information
(Assoc. Member) ,
S. K. RoyCentre of Advanced Study in Radio Physics & Electronics (CAS Building), 1, Girish Vidyaratna Lane Calcutta700009.
(Assoc. Member) &
B. B. PalCentre of Advanced Study in Radio Physics & Electronics (CAS Building), 1, Girish Vidyaratna Lane Calcutta700009.View further author information
Pages 547-551 | Received 24 Aug 1977, Published online: 11 Jul 2015

REFERENCES

  • Misawa (T). Negative Resistance in p-n Junctions under Avalanche Breakdown Conditions, Part II. IEEE Trans. ED-13, 1; 1966; 143–151.
  • Bowers (H C). Space-Charge-Induced Negative Resistance in Avalanche Diodes. IEEE Trans. ED-15, 6; 1968; 343–350.
  • Muller (M W) and Guckel (H). Negative Resistance and Filamentary Currents in Avalanching Silicon p-i-n+ Junctions. IEEE Trans. ED-15, 8; 1968; 560–568.
  • Scharfetter (DL), Bartelink (DJ) and DE LOACH (B C). Comments on Static Negative Resistance in Avalanche p+-t-n+ Junctions. IEEE Trans. ED-16, 11; 1969; 970–972.
  • Scharfetter (D L) and Gummel (H K). Large-Signal Analysis of a Silicon Read Diode Oscillator. IEEE Trans. ED-16, 1; 1969; 64–77.
  • Wierich (R L). Computer Simulation of Avalanche Diodes with Special Regard to Noise, PhD Thesis, University College of London, 1971. P 8–18.
  • Lee (C H), LOMAX (R J) and Haddad (G I). Semiconductor Device Simulation. IEEE Trans. MTT-22, 3; 1974; 160–177.
  • Bauhahn (P) and Haddad (G I). IMPATT Device Simulation and Properties. IEEE Trans. ED-24, 6; 1977; 634–642.
  • Carroll (JE). Hot Electron Microwave Generators. 1970. Edward Arnold Ltd., London. P 183–188.
  • Misawa (T). IMPATT Diodes, Semiconductors and Semimetals. 7, 1971. Academic Press, NY. P 372–472.
  • Sze (SM). Physics of Semiconductor Devices. 1569. Wiley, NY. P 56–65.
  • Sze (S M) and Gibbons (G). Avalanche Breakdown Volt ages of Abrupt and Linearly Graded p-n Junctions in Ge, Si, GaAs and GaP. Appl. Phys. Letters. 8, 5; 1966; 111–112.
  • Glover (G H). Ionization Rates in GaAs Determined from Photomultiplication in a Schottky Barrier. J. Appl. Phys. 44, 7; 1973; 3252–3256.
  • Rodrigues (V), Ruegg (H) and Nicolet (M A). Measure ment of the Drift Velocity of Hole in Silicon at High Field Strengths. IEEE Trans. ED-14, 1; 1967; 44–46.
  • Dalal (VL), Dreeben (A B) and Triano (A). Tempe rature-Dependence of Hole Velocity in GaAs. J. Appl. Phys. 42, 6; 1971; 2864–2867.

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