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IETE Journal of Research Volume 26, 1980 - Issue 9
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Original Articles

Ion-Implantation for Semiconductor Device Fabrication

Invited Paper

Amarjit SinghCentral Electronics Engineering Research Institute, Pilani333 031.View further author information
(Dist. Fellow)
Pages 502-509 | Received 07 Apr 1979, Published online: 11 Jul 2015

REFERENCES

  • Stone (J L) and Plunkett (J C). Recent Advances in Ion-Implantation—A State-of-the-Art-Review. Solidstate Technology. June, 1976; 35–44.
  • Lee (D H) and Mayer (J W). Ion-Implanted Semiconductor Devices. Proc. IEEE. Sept. 1974; 1244–1255.
  • Lindhart (J), Scharff (M) and Schiott (H). Range Concepts and Heavy Ion Ranges. Kgl. Danske Vid. Selskab, Mat. Phys. Medd., 33, 1963; 1–42.
  • Wilson (W D), Haggmark (L G) and Bersack (J P). Phys. Rev. B 15, 1977; 2458.
  • Johnson (W S) and Gibbons (J F). Projected Range Statistics in Semiconductors. Stanford, Calif., Stanford, University Press, 1969.
  • Chu (W K), Crowder (B L), Mayer (J W) and Ziegler (J F). Ranges and Distributions of Ions Implanted in Dielectrics. Ion-Implantation in Semiconductors. B.L. Crowder, Ed. New York, Plenum, 1973, P 225–241.
  • Douglas (E C) et al. Ion-Implantation Basics, by RCA. Laboratories, Princeton, New Jersey, U.S.A. PRRL-72-TR-100, June 26, 1972, p. 1–61.
  • Reddi (V G K) and Yu (A Y C). Ion-Implantation for Silicon Device Fabrication. Solid state Technology. Oct., 1972; 35–41.
  • Gibbons (J F). Ion-Implantation in Semiconductors-Part II, Damage Production and Annealing. Proc. IEEE. 60, 9; 1972; 1062–1096.
  • Dearnaley (G), Freeman (J H), Nelson (R S) and Stephen. Ion-Implantation. Atomic Energy Research Establishment, Harwell. England, North Holland Publishing Co., Chapters 2 and 3.
  • Namba (S) and Masuda (K). Ion-Implantation in Semiconductors, in Advances in Electronics and Electron Physics, 37, 1975; Academic Press, New York, P 263–330.
  • Anderson (A) and Swenson (G). Annealing Experiments on Silicon Layers Implanted with 50 keV Phosphorous Ions. European Conference on Ion Implantation, p. 65, Reading (Sept. 1970).
  • Fladda (G), Bjorkqvist (K), Eriksson (L) and Sigurd (D). Appl. Phys. Letters. 16, 1970; 313.
  • Poate (J M) et al. Liquid and Solid Phase Regrowth of Si by Laser Irradiation and Thermally Assisted Flash Annealing Proc. Int. Conf. on Ion-Beam Modification of Materials, Budapest, Sept., 1978.
  • Bird (H M B) and Flemming (J P). Development of ERC Cold-cathode Ion Source for Use on the PR-30 Ion-Implantation System. J. Vac. Sci. Technol. 15, 3; 1978; 1070–1075.
  • Williams (N). High Current Ion Source for Use on the PR-30 Implantation. J. Vac. Sci. Technol. 15, 3; 1978; 1076–1079.

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