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Optimizing the Performance of Transistor-Resistor-Coupled Device Against Wide Variation of Temperature

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Pages 509-511 | Received 16 Mar 1978, Published online: 11 Jul 2015

REFERENCES

  • Darlington (S). U S Patent 2663806 (Dec. 1953).
  • Gray (G A), et al, A JFET Circuit for Instrumentation Applications. IEEE Trans. IM-22, 1973; 2–8.
  • Khan (A A) and Das (Y A). Transfer Characteristic of a New Solid-State Circuit. Indian J. Pure Appl. Phys. 15, 1977; 59–60.
  • Khan (A A) and Das (Y A). Analysis of Transistor-Resistor Coupled Device. Indian J. Pure Appl. Physics. 15, 1977; 260–263.
  • Khan (A A) and Das (Y A). Effect of Temperature on the Performace of Transistor-Resistor-Coupled Device. Indian J. Pure Appl. Phys. 1, 1978; 478–480.
  • Khan (A A) and Das (Y A). Experimental and Analytical Study of Transistor-Resistor-Coupled Device. Indian J. Pure Appl. Phys. 17, 1; 1979.

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