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Original Articles

Negative Resistance Realisation in Transistor-Resistor-Coupled Device

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Pages 12-15 | Received 17 Sep 1979, Published online: 11 Jul 2015

REFERENCES

  • Chakravarty (S) & Choudhary (A K). Transistor-Resistor Realization of Negative Resistance Circuits Employing Two Ideal Transistors. Int. J. Electron. 30, 5; 1971; 449–471.
  • Khan (A A). A New Voltage-Controlled Negative Resistance Solid-State Device. Indian J. Pure & Appl. Phys. 10, 11; 1972; 896–898.
  • Kano (G) & Iwasa (H). A New π-Type Negative Resistance Device of Integrated Complementary FET Structure. IEEE Trans. ED-21, 7; 1974; 448–449.
  • Ashok (S). An Accurate Voltage-Controlled Negative Resistance Circuit. IEEE J. Solid-State Circuits. SC-12, 6; 1977; 311–313.
  • Khan (A A) & Das (Y A). Transfer Characteristic of a New Solid-State Circuit. Indian J. Pure & Appl. Phys. 15,1; 1977; 59–60.
  • Khan (A A) & Das (Y A). Analysis of Transistor-Resistor-Coupled Device. Indian J. Pure & Appl. Phys. 15, 4; 1977; 260–263.
  • Khan (A A) & Das (Y A). Analytical and Experimental Study of Transistor-Resistor-Coupled Device. Indian J. Pure di Appl. Physics. 17, 1; 1979; 26–31.

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