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IETE Journal of Research Volume 27, 1981 - Issue 5

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Original Articles

Some Features of Avalanche Breakdown Phenomena Part 2: Gate-Controlled Diodes

R.S. SharmaP.G. Department of Physics, University of Kashmir, Srinagar190 006.

M.A. PeerP.G. Department of Physics, University of Kashmir, Srinagar190 006.View further author information

Pages 184-188 | Received 27 Jun 1978, Published online: 11 Jul 2015

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https://doi.org/10.1080/03772063.1981.11452379

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REFERENCES

Sharma (R S) & Peer (M A). Some Features of Avalanche Breadkown Phenomena: 1. Diodes and Transistors. JIETE. 27, 5; 1981: 178–184.
Google Scholar
Bulucca (C). Avalanche Injection into the Oxide in Silicon Gate-Controlled Devices: I Theory. Solid-State Electronics, 18, 1977; 363–374.
Web of Science ®Google Scholar
Grove (A S). Physics and Technology of Semiconductor Devices. 1967. J. Wiley and Sons, New York.
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