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IETE Journal of Research Volume 28, 1982 - Issue 3
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Letters to the Editor

A New Composite Unit Device Using J-Fet and Bipolar Transistor

Anwar A. KhanDepartment of Physics, Ranchi University, Ranchi834 006
(Member) ,
Lalan SinghDepartment of Physics, A.N. College, Patna800 013
&
Y. Anand DasDepartment of Physics, B.S. College, Danapur, Patna800 012
Pages 117-119 | Received 24 Apr 1981, Published online: 11 Jul 2015

REFERENCES

  • Darlington (S). US Patent 2663806 (Dec.1953)
  • Black (G G A) & Smith (K C). A J-FET Circuit for Instrumentation Applications. IEEE Trans. IM-22, 1; 1973; 2–8.
  • Khan (A A) & Das (Y A), a. Transfer Characteristic of a New Solid-State Circuit. Indian J. Pure Appl. Physics. 15, 1; 1977; 59–60.
  • Khan (A A) & Das (Y A), b. Analysis of Transistor—Resistor—Coupled Device. ibid. 15, 4; 1977; 260–263.
  • Khan (A A) & Das (Y A). Effect of Temperature on the Performance of Transistor-Resistor-Coupled Device. Ibid. 16, 4; 1978; 478–480.
  • Khan (A A) & Das (Y A). Experimental and Analytical Study of Transistor-Resistor-Coupled Device. Ibid. 17, 1; 1979; 26–31.
  • Khan (A A) & Das (Y A), a. Optimizing the Performance of Transistor-Resistor-Coupled Device against Wide Variation of Temperature. J. Instn. Electron. &Telecom. Engr. 26, 9; 1980; 509–511.
  • Khan (A A) & Das (Y A), b. Solid-State Composite Unit Devices. J. Sci. Industr. Res. 39, 11; 1980; 625–632.

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