REFERENCES
- Baccorani (G) & Ostuja (P). Electron Mobility Empirically Related to the Phosphorus Concentration in Silicon. Solid-State Electron, 18, 6: 1975; 579–581.
- Burger (S) & Donovan (R P). Fundamentals of Silicon Integrate Circuit Device Technology Vol. II. Prentice-Hall U.S.A., 1968; 91–92.
- Caughey (D M) & Thomas (R E). Carrier Mobilities in Silicon Empirically Related to Doping and Field. Proc. IEEE (Letts). 55, 12; 1967; 2192–2193.
- Gummel (H K). A Charge Control Relation for Bipolar Transistors. Bell Syst. Tech. J. 49, 1; 1970; 115–120.
- Gummel (H K) & Poon (H C). An Integral Charge Control Model of Bipolar Transistors. Bell Syst Tech. J. 49, 5; 1970; 827–852.
- Moll (J L) & Ross (I M). The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity. Proc. IRE. 44, 1; 1956; 72–78.
- Rey (G), Dupuy (F) & Bailbe (J P). A Unified Approach to the Base Widening Mechanism in Bipolar Transistors. Solid-State Electron. 18, 10; 1975; 863–866.
- Roulston (D J), Chamberlain (S G) & Sehgal (J). Simplified Computer-Aided Analysis of Double-Diffused Transistors Including Two-Dimensional High Level Effects. IEEE Trans. ED-19, 6; 1972; 809–820.
- Ryder (E J). Mobility of Holes and Electrons in High Electric Fields. Phys. Rev. 90. 6; 1953; 766–769.
- Schilling (R B). A Bipolar Transistor Model for Device and Circuit Design. RCA Rev. 32, 3; 1971; 339–371.