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IETE Journal of Research Volume 29, 1983 - Issue 2
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Original Articles

A Comparative Study of the Properties of Single Velocity and Double Velocity Hetero-Junction Impatt Diodes

R.U. KhanDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005.
&
B.B. PalDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005.View further author information
Pages 68-71 | Received 01 Aug 1981, Published online: 10 Jul 2015

REFERENCES

  • Namordi (MR), Shaw (D W) & Doerbeck (FH). Ge/GaAs Hetero-junction IMPATT. IEEE Trans. ED-26, 7; 1979; 1074–1080.
  • Adlerstein (M G) & Statz (H). Double Velocity IMPATT Diodes. IEEE Trans. ED-26, 5; 1979; 817–819.
  • Pal (B B) & Roy (S K). Small Signal Analysis of a p-n Junction Avalanche Diode Having a Uniform Avalanche Zone and Drift Zone for Unequal Ionization Rates and Drift Velocities of Electrons and Holes. J. Phys. D. Appl. Phys. 4; 1971; 2041–2048.
  • Nag (B R). Theory of Electrical Transport in Semiconductors. 1972 Pergamon Press, London.
  • Sze (S M). Physics of Semiconductor Devices. 1969 J. Wiley & Sons, New York.
  • Salmer (G) et al. Theoretical and Experimental Study of GaAs Impatt Oscillator Efficiency. J. Appl. Phys. 44, 1973; 311–324.
  • Greiling (P T). PhD Thesis. 1970, University of Michigan.

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