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IETE Journal of Research Volume 29, 1983 - Issue 3
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Original Articles

High Frequency Noise in Dar Impatt Diode Considering Unequal Ionization Rates and Drift Velocities of Electrons and Holes

D.N. DattaCentre of Advanced Study in Radio Physics * Electronics, 1, Girish Vidyaratna Lane, Calcutta700009.
&
B.N. PalDepartment of Electronics Engineering, Institute of Technology. Banaras Hindu University, Varanasi221005.
Pages 119-123 | Received 15 Mar 1982, Published online: 10 Jul 2015

REFERENCES

  • Datta (D N) & Pal (B B). High Frequency Noise Properties of a Double Avalanche Region (DAR) Impatt Diode. Solid-State Electronics. 23. 4; 1980; 377–382.
  • Datta (DN) & Pal (BB). Generalized Small Signal Analysis of a DAR (Double Avalanche Region) Impatt Diode. Solid-Stale Electronics. 25, 6; 1982; 435–439.
  • Hines (M E). Noise Theory for the Read Type Avalanche Diode. IEEE Trans. ED-13, 1; 1966; 158–163.
  • Kuvas (R). Noise in Impatt Diodes: Intrinsic Properties. IEEE Trans. ED-19, 2; 1972; 220–233.
  • Kuvas (R) & Lee (C A). Quasistatic Approximation for Semiconductor Avalanches. J. Appl. Phys. 41, 4; 1970; 1743–1755.
  • Gummel (H K) & Blue (J L). A Small Signal Theory of Avalanche Noise in Impatt Diodes. IEEE Trans. ED-14, 9; 1967; 569–580.
  • Datta (D N), Pati (S P), Banerjee (J P), Pal (B B) & Roy (S K). Computer Analysis of DC Field and Current Density Profiles of DAR Impatt Diodes. IEEE Trans. ED-29, 11; 1982; 1813–1816.
  • Misawa (T). Negative Resistance in p—n Junctions Under Avalanche Conditions. IEEE Trans. ED-13, 1; 1966; 137–151.
  • Sridharan (M) & Roy (S K). Computer Studies on the Widening of the Avalanche Zone and the Decrease in the Efficiency of Silicon X-band Symmetrical Double Drift Impatt Diodes at High Current Densities. Electronics Letters 14, 19; 1978: 635–637.
  • Som (B), Pal (B B) & Roy (S K). A Small Signal Analysis of an Impatt Device Having Two Avalanche Layers Interspaced by a Drift Layer. Solid-State Electronics. 17, 10; 1974; 1029–1038.
  • Culshaw (B), Giblin (R A) & Blakey(PA). Avalanche Diode Oscillators. III Design and Analysis: The Future. Int. J. Electronics. 40, 6; 1976; 521–568

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