REFERENCES
- J. Keer(D R), Logan (J S), Burkhardt (P J) & Pliskin (W A). Stabilization of SiO2 Passivation Layers with P2O5. IBM J. Res. & Dev. 8, 1964; 376.
- Miura (Y), Tanaka (S), Matukura (Y) & Osafune (H). Silicon Dioxide Films Doped with Phosphorus. J. Electrohem. Soc. 113, 1966; 399.
- Yamin (M). Observations on Phosphorus Stabilized SiO2 Films IEEE Trans. ED-13, 1966; 256.
- Balk (P) & Eldridge (J M). Phosphosilicate Glass Stabilization of FET Devices. Proc. IEEE. 57, 1969; 1558.
- Hofstein (S R). Stabilization of MOS Devices. Solid-Stale Electronics. 10, 1967; 657.
- Kriegler (R J), Cheng (Y C) & Colton (D R). The Effect of HCl and Cl2 on the Thermal Oxidation of Silicon. J. Electrochem. Soc. 119, 1972; 388.
- Kriegler (R J). The Rate of HCl in the Passivation of MOS Devices. Thin Solid Films. 13, 1972; 11.
- Osburn (C M) & Chou (N J). Accelerated Dielectric Breakdown of Silicon Dioxide Films. J. Electrochem. Soc. 120, 1973; 1377.
- Osburn (C M). Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen Containing Environments. J. Electrochem. Soc. 121, 1974; 809.
- Van der Mculen (Y J), Osburn (C M) & Ziegler (J F). Properties of SiO2 Grown in Presence of HCl or Cl2. J. Electrochem. Soc. 122, 1975; 284.
- Mao-Chieh Chen & Hile (J W). Oxide Charge Reduction by Chemical Gettering with Trichloroethylene during Thermal Oxidation of Silicon. J. Electrochem. Soc. 119, 1972; 223.
- Declerk (G J), Hattori (T), May (G A), Beaudouin (J) & Meindl (J D). Some Effects of Trichloroethylene Oxidation on the Characterization of MOS Devices. J. Electrochem. Soc. 122, 1975; 436.
- Singh (B R) & Balk (P). Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds. J. Electrochem. Soc. 125, 1978; 453.
- Singh (BR) & Balk (P). Thermal Oxidation of Silicon in 02- Trichloroethylene. J. Electrochem. Soc. 126, 1979; 1288.
- Singh (R) & Basu (P K). Different Methods of SiO2 Growth for MOS Devices: A Comparative Study. Extended Abst. of papers, Symposium on Electron Devices, CEERI, Pilani, India, Sept. 22–23 (1978), P 4.27–4.34.
- Kuhn (M). A Quasi-static Technique for MOS C-V and Surface State Measurements. Solid-State Electronics. 13, 1970; 873.
- Goetzberger (A), Klausmann (E) & Schulz (MJ). Interface States on Semiconductor Insulator Surfaces. CRC Critical Rev. in Solid-State Sciences, Jan 1976, 1–43.
- Brown (DM) & Gray (P V). Si-SiO2 Interface State Measurements. J. Electrochem. Soc. 115, 1968; 760.
- Berglund (C N). Surface States at Steam-Grown Si-SiO2 Interfaces. IEEE Trans. ED-13, 1966; 701.
- Goetzberger (A), Lopez (A D) & Strain (R J). On the Formation of Surface States during Stress Aging of Thermal Si-SiO2 Interfaces. J. Electrochem. Soc. 120, 1973; 90.