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Original Articles

Some Studies on the Effect of the Resonant Cap on the Oscillator Performance of X-Band Gaas and Si Impatt Oscillators

, (Member) & (Member)
Pages 215-218 | Received 21 Jan 1981, Published online: 10 Jul 2015

REFERENCES

  • Lee (TP), Standley (R D) & Misawa (T). A 50-GHz Silicon 1MPATT Diode Oscillator and Amplifier. IEEE Trans. ED-15, 7; 1968; 741–747.
  • Misawa (T) & Kenyon (N D). An Oscillator Circuit with Cap Structure for Millimetre-Wave IMPATT Diodes. IEEE Trans. MTT-18, 11; 1970; 969–970.
  • Groves (I S) & Lewis (D E). Resonant Cap Structures for IMPATT Diodes. Electon. Lens. 8, 2; 1972; 98–99.
  • Talwar (A K). A Dual Diode 73-GHz Gunn Oscillator. IEEE Trans. MTT-27, 5; 1979; 510–512.
  • Cachier (G), Espaignol (J) & Stevarance (J). Millimetre-Wave Pre-tuned Modules. IEEE Trans. MTT-27, 5; 1979; 505–510.
  • Misawa (T). Multiple Uniform Layer Approximation in Analysis of Negative Resistance in p—n Junctions in Breakdown. IEEE Trans. ED-14, 1967; 795.
  • Kenyon (N D). Equivalent Circuit and Tuning Characteristics of Resonant-Cap Type IMPATT Diode Oscillators. European Microwave Conf. Proceedings, Vol. A11, 1973.
  • Eisenhart (R E) & Khan (P J). Some Tuning Characteristics and Oscillation Conditions of a Waveguide-Mounted Transferred- Electron Diode Oscillator. IEEE Trans. ED-19, 9; 1972; 1050–1055.
  • Bahl (I J) & Bharatia (P). Microstrip Antennas. 1980. Artech Press, Dedham, Mass. P 86–91.

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