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IETE Journal of Research Volume 29, 1983 - Issue 5
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Letters to the Editor

Comparison of Boron Diffusion Through Narrow and Wide Areas

S.A. AbbasiDepartment of Electrical Engineering, Aligarh Muslim University, Aligarh202 001
&
A. BrunnschweilerDepartment of Electronics, The University of SouthamptonS09 SNH, England.
Pages 221-222 | Received 24 Apr 1982, Published online: 10 Jul 2015

REFERENCES

  • Abbasi (S A) & Brunnschweiler (A). The Effects of Oxide Masking on Boron Deposition. Europhysics Conf. Abstracts, 10th ESSDERC, York, 1980; 180–181.
  • Abbasi (S A) & Brunnschweiler (A). The Effect of Masking Oxide on the Diffusion of Boron into Silicon. IEE Proc. 128, pt. I, 5: 1981; 185–188.
  • Nabeta (Y), Uno(T), Kubo (S) & Tsukamato (H). Restrained Diffusion of Boron and Phosphorus in Silicon under HCl-Added Oxygen Atmosphere. J. Electrochem. Soc. 1976; 1416.
  • Abbasi (S A) & Brunnschweiler (A). Variation of Diffused Boron Concentration in the Neighbourhood of an Oxide-Masked Edge. Electronics Letters. 17, 16; 1981; 578–579.
  • Yanagawa (T). Resistance of Narrow Diffused Layers. IEEE Trans. ED-19, 11; 1972; 166–1171.
  • Prussin (S). Generation and Distribution of Dislocation by Solute Diffusion. J. Appl. Phy. 32, 10; 1961; 1276.
  • Lawrence (J E). Behaviour of Dislocations in Silicon Semiconductor Devices; Diffusion, Electrical. J. Electrochem. Soc. 115, 1968; 560.
  • Somorjai (G A). Principles of Surface Chemistry. 1972. Prentice-Hall, Inc., New Jersey.

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