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Letters to the Editor

D.C. Computer Simulation of GaAs DAR Impatt Suitable for MM Wave

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Pages 106-108 | Received 11 Oct 1983, Published online: 02 Jun 2015

REFERENCES

  • D.N. Datta, S.P. Pati, J.P. Banerjee, B.B. Pal & S.K. Roy, Computer analysis of DC field and current density profiles of DAR impatt diode, IEEE Trans, vol ED-29, pp 1813–1816, 1982.
  • S.K. Roy, M. Sridharan, R. Ghose & B.B. Pal, Computer method for the DC field and current profiles in Impatt devices starting from field extremum in the depletion layer. Numerical Analysis of Semiconductor Devices Editors: B.T. Brown and J.J.H. Miller, Boole Press, Dublin, Ireland, pp 265–274, 1979.
  • M. Ito, S. Kagawa, T. Kaned & T. Yamaoka, Ionization rates for electrons and holes in GaAs, J. Appl Phy, vol 40(B), pp 4607–4608,1978.
  • D.C. Newman, D.K. Ferry & J.R. Sites, ‘Measurements and simulation of GaAs FET's under electron beam irradiation, IEEE Trans, vol ED-30, pp 849–855, 1983.
  • B. Som, B.B. Pal & S.K. Roy, A small signal analysis of an Impatt device having two avalanche layers interspaced by a drift layer, Solid State Electron, vol 17, pp 1029–1038, 1974.
  • D.N. Datta & B.B. Pal, Generalized small signal analysis of a DAR (Double Avalanche Region) Impatt diode, ibid., vol 25, pp 435–439, 1982.

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