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Original Articles

Impulse Response of Partially Depleted p-i-n Photodiode

Pages 28-32 | Received 15 Apr 1985, Published online: 02 Jun 2015

REFERENCES

  • H K Gummel, A self-consistent iterative scheme for one-dimensional steady state transistor calculations, IEEE Trans, vol ED-11, pp 455–465, 1964.
  • K Yamaguchi, A time-dependent and two-dimensional numerical model for MOSFET device operation, Solid-Stale Electronics, vol 26, pp 907–916, 1983.
  • M Conti, G Corda & M De Padova, PIN photodetector under transient conditions: simulations and experiments, ibid, vol 22, pp 151–155, 1979.
  • Z Djuric, & B Radjenovic, Rise time of silicon p-i-n photodiodes, ibid, vol 26, pp 1143–1149, 1983.
  • D M Caughley & R F Thomas, Carrier mobilities in silicon empirically related to doping and field. Proc IEEE, vol 55, pp 2192–2199, 1967.

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