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Original Articles

A Computer Study on the High Frequency Properties of Silicon mm-Wave Single Drift Impatt Diodes

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Pages 159-163 | Received 11 Jan 1987, Published online: 02 Jun 2015

REFERENCES

  • S K Roy, M Sridharan, R Ghosh & B B Pal, Computer methods for the dc field and current profiles in Impatt devices starting from the field extremum in the depletion layer, Proc. of the NASECODE-I Conf. on Numerical Analysis of Semiconductor Devices (Dublin, Ireland) pp 266–274, 1979.
  • D N Datta, S P Pati, J P Banerjee, B B Pai & S K Roy, Computer analysis of dc field and current density profiles of DAR Impatt diodes, IEEE Trans, vol ED-29, pp 1813–1816, 1982.
  • H K Gummel & J L Blue, A small signal theory of avalanche noise in Impatt diodes, IEEE Trans, vol ED-14, pp 569, 1967.
  • S K Roy, J P Banerjee & S P Pati, A computer analysis of the distribution of high frequency negative resistance in the depletion layer of Impatt diodes, Proc of the NASECODE-IV, Conf on Numerical Analysis of Semiconductor Devices (Dublin, Ireland), pp 494, 1985.
  • M E Elta & G L Haddad, High frequency limitations of IMPATT, MITATT and TUNNETT mode devices, IEEE Trans, vol MTT-27, p 442, 1979.

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