REFERENCES
- J Nulman, K G Lubie, N Shah & S Behra. Rapid thermal processing with reactive gases, oxidation, silicidation and reflow, Semicon/East, 1986.
- R Singh, K C Taylor, G C Chamney, GSR Krishnamurthy & K Rajkanan, Proc II Int Symp VLSI, (Ed K E Bean & G A Rozgony), J Electrochem Soc, N Y, p 288, 1984.
- R Oren & S K Gandhi, J Appl Phys, vol 42, p 752, 1971.
- S A Schafer & S A Lyon, J Vac Sci Technol, vol 21 (2), p 422, 1982.
- E M Young & W A Tiller, Appl Phys Lett, vol 42(1), p 6 1982.
- E M Young & W A Tiller, Appl Phys Lett, vol 50(1), p 46, 1987.
- F Micheli & I W Boyd, Appl Phys Lett, vol 51 (15), p 1146, 1987.
- B E Deal & A S Grove, J Appl Phys, vol 36, p 3770, 1965.
- H Z Massoud & J D Plummer, J Appl Phys, vol 62 (8), 1987.
- J Vasi, S S Moharir & A N Chandorkar, Proc 4th Int workshop Physics of Semiconductor Devices, World Scientific Publ, Madras, p 378, 1987.
- V K Samalam, Appl Phys Lett, vol 47(7), p 736, 1985.
- M Orlowski & V Pless, Appl Phys Lett, vol A 46, p 67, 1988.
- H Wong & Y C Cheng, Appl Phys, vol 64(2), July 1988.
- E H Nicollian & A Reiseman, J Electronic Materials, vol 17, p 263 1988.
- S Mehta, C J Russo & D Hodulc, SPIE Conf California, Report No. 85, 1986.
- P J Rosser, P B Mayanagh & C N Duckworth, Mat Res Soc Symp Proc, vol 54, 1986.
- R Singh, Rapid Isothermal Processing, J Appl Phys, vol 163 (8), p 59, April 1988.
- E A Lewis & E A Irene, Models for Oxidation of Silicon, J Vac Sci Technol, vol A 4(3), p 916, May/June 1986.
- H Z Massoud, PhD Thesis, Standford Univertsity, 1983.
- R Singh, N E McGruer, K Rajkanan & J N Weiss, J Vac Sci Technol, vol A6, May/June 1988.
- A M Hodge, C Pickering, A J Pidduck & R W Hardeman, Mat Res Soc Symp Proc, (Ed T O Sedgwick, T E Seidel & B Y Tsaur), vol 52, p 313, 1986.
- N Chan Tung, Y Caratini & T Buevor, Proc Mat Res Soc Symp, vol 54, p 147, 1986.
- M M Moslehi, S C Shatas & K C Saraswat, Appl Phys Lett, vol 47, p 1353, 1985.
- Paz DeArajujo, J C Gelpey, Y P Huang & R Kwar, Proc Mat Res Soc Symp, vol 54, p 133, 1986.