REFERENCES
- F B McLean, H E Boesch, Jr, & T R Oldham, Ionizing Radiation Effects in MOS Devices & Circuits, (T P Ma & P V , Eds), John Wiley, NY, 1989, p 149.
- D R Wolters & A T A Zegers-van Duynhoven, VLSI Science and Technology (S Broydo & C M Osburn, Eds), The Electrochemical Society, Inc, Pennington, NJ 1987, p 101.
- M Knoll, D Braunig & W R Fahner, J Appl Phys, vol 53, p 6946, 1982.
- H E Boesch & J M McGarrity, IEEE Trans Nucl Sci, vol NS-26, p 4814, 1979.
- P S Winokur, Ionizing Radiation Effects in MOS Devices & Circuits, ibid, p 193.
- E Harrari, J Appl Phys, vol 49, p 2478, 1978.
- W L Warren & P M Lenahan, IEEE Trans Nucl Sci, vol NS-34, p 1355, 1987.
- Y Nishioka, E F da Silva & T P Ma, Appls Phys Lett, vol 52, p 720, 1988.
- C Falcony & F H Sales, J Appl Phys, vol 59, p 3787, 1986.
- S Broydo & C M Osburn, (Eds), VLSI Science and Technology, The Electrochemical Society, Inc Pennington, N J, 1987, p 107.
- J J Tzou, J Y C Sun & C T Sah, Appl Phys Lett, vol 43, p 861, 1983.
- S Manzini & A Modelli, Insulating Films on Semiconductors, (J F Verweij & D R Wolters, Eds), North Holland, New York, 1983, p 112.
- W L Chadsey, IEEE Trans Nucl Sci, vol NS-25, p 1591, 1978.
- P S Winokur, Ionizing Radiation Effects in MOS Devices & Circuits, ibid, p 215.
- C Sequin & E Baldinger, Solid State Electron, vol 13, p 1527, 1970.
- R C Hughes & C H Seager, IEEE Trans Nucl Sci, vol NS-30. p 4049, 1983.
- S K Lai & D R Young, J Appl Phys, vol 52, p 6231, 1981.
- C Glenn Shirley, J Electrochem Soc, vol 132, p 488, 1985.
- E Auni & J Shappir, J Appl Phys, vol 64, p 743, 1988.
- P M Lenahar & P V Dressendorfer, IEEE Trans Nucl Sci, vol NS-30, p 4602, 1983.
- S T Chang, J K Wu & S A Lyon, Appl Phys Lett, vol 48, p 662, 1986.