A Study on the Effect of Electron and Hole Saturation Currents on the Negative Resistance Profiles, Negative Conductance and the Frequency of Operation of Millimeter Wave (W-Band) Double-Drift Silicon IMPATT Diodes

REFERENCES

• H W Yen, M K Barnoski, R G Hunsperger & R T Melville, Switching of GaAs IMPATT diode oscillator by optical illumination, Appl Phys Lett, vol 31, p 120, 1977.
   Web of Science ®Google Scholar
• J R Forrest & A J Seeds, Optical injection locking of IMPATT oscillators, Electron Lett, vol 14, p 626, 1978.
   Web of Science ®Google Scholar
• H W Yen, Optical injection locking of silicon IMPATT oscillators, Appl Phys Lett, vol 38, p 680, 1980.
   Google Scholar
• P E Cottrell, J M Borrego & R J Gutmann, IMPATT oscillators with enhanced leakage current, Solid State Electron, vol 18, p 1, 1975.
   Web of Science ®Google Scholar
• H P Vyas, R J Gutmann, & J M Borrego, Leakage current enhancement in IMPATT oscillators by photoexcitation, Electron Lett, vol 13, p 189, 1977.
   Web of Science ®Google Scholar
• H P Vyas, R J Gutmann & J M Borrego, The effect of hole versus electron photocurrent on microwave-optical interaction in IMPATT oscillators, IEEE Trans Electron Device, vol ED-26, p 232, 1979.
   Web of Science ®Google Scholar
• S K Roy, B Som & B B Pal, Dependence of the Read diode characteristics on the multiplication factor in the avalanche zone, Proc IEEE (Lett), vol 63, p 1072, 1975.
   Web of Science ®Google Scholar
• B B Pal, B Som & SK Roy, Effect of finite current multiplication factor in the avalanche zone, Proc IEEE (Lett), vol 64, p 1252, 1976.
   Web of Science ®Google Scholar
• N Mazumder, J P Banerjee & S K Roy, Variation of high frequency negative resistance of silicon n+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current, phys state solidi (a), vol 116, p 415 1989.
   Web of Science ®Google Scholar
• M Sridharan & S K Roy, Computer studies of the effect of electron and hole current multiplication factors on the dc and microwave properties of symmeterical Si DDR IMPATT devices, Solid State Electron, vol 25, p 493, 1982.
   Web of Science ®Google Scholar
• J F Singleton, A J Seeds & S P Brunt, Optical control of W-band IMPATT oscillator, IEEE Proc J, vol 133, p 349, Dec. 1986.
   Google Scholar
• P R Herezfeld, A S Daryoush, A Rosen, A K Sharma & V M Contarino, Indirect subharmonic optical injection locking of a millimeter-wave IMPATT oscillator, IEEE Trans Microwave Theo and Tech, vol MTT-34, p 1371, 1986.
   Web of Science ®Google Scholar
• SK Roy, J P Banerjee & S P Pati, A computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT diodes, Proc Conf on Num Analysis of Semiconductor Devices (NASECODE IV), Dublin (Ireland), p 494, 1985.
   Google Scholar
• S P Pati, PhD Thesis, University of Calcutta, 1984.
   Google Scholar
• SP Pati, J P Banerjee, & S K Roy, The distribution of negative resistivity in the active layer of millimeter-wave double-drift region diodes, J Phys D: Appl Phys, vol 22, p 959, 1989.
   Web of Science ®Google Scholar
• R K Mains, M A Elgably, G I Haddad & J P Sun, Comparison of theoretical and experimental results for millimeterwave GaAs IMPATTs, IEEE Trans Electron Device, vol ED-31, p 1273, 1984.
   Web of Science ®Google Scholar
• R U Khan, P Chakrabarti & B B Pal, MITTAT mode in DDR heterostructure IMPATT, Appl Phys A (Germany), vol A-42, p 303 1987.
   Web of Science ®Google Scholar
• W N Grant, Electron and hole ionization rates in epitaxial silicon, Solid State Electron, vol 16, p 1109, 1973; and Electron and hole ionization rates in epitaxial silicon at high electric field, Solid State Electron, vol 16, p 1189, 1975.
   Google Scholar
• C Canali, G Ottaviani, & A A Quaranta, Drift velocity of electrons and holes and associated anisotropic effects in silicon, J Phys Chem Solids, vol 32, p 1707, 1971.
   Web of Science ®Google Scholar
• S K Roy, M Sridharan, R Ghosh, & B B Pal Computer methods for the dc field and carrier current profiles in IMPATT devices starting from the field extremum in the depletion layer, Proc Conf on Num Analysis of Semiconductor Devices (NASECODE 1), Dublin (Ireland), p 266, 1979.
   Google Scholar
• D N Datta, S P Pati, J P Banerjee, B B Pal & S K Roy, Computer analysis of dc field and current density profiles of DAR IMPATT diode, IEEE Trans Electron Devices, vol ED-29, p 1813, 1982.
   Web of Science ®Google Scholar
• H K Gummel & J L Blue, A small signal theory of avalanche noise in IMPATT diodes, IEEE Trans Electron Devices, vol ED-14, p 569, 1967.
   Web of Science ®Google Scholar
• P Chakrabarti & B B Pal, Computer simulation of ion-implanted DAR IMPATT around 94 GHz under steady state condition, Phys stat solidi (a), vol 94, p 305, 1986.
   Google Scholar