REFERENCES
- H Welker, Über neue halbleitende Verbindungen II, Zs Naturforschung, vol 8a, pp 248–251, 1953.
- H H Leifer & W C Dunlap, Jr, Some properties of p-type gallium antimonide between 15 K and 295° K, Phys Rev, vol 95, pp 51–56, 1954.
- D P Dctwiler, Electrical properties of gallium antimonide, Phys Rev, vol 97, pp 1575–2578, 1955.
- K Smirous, Der Einfluss von Beimengungen auf die Eigenschaften von Galliumantimonid, Czech J of Phys, vol 6, pp 39–44, 1956.
- B T Boltaks & Yu A Gutorov, Nekotorye dannye o diffuzii i vliania primcsei na eiektricheskie svoistva antimonida gallia, Sov Solid State Physics, vol 1, pp 1015–1021,1959.
- Y J Van der Meulen, J Phys Chem Solids, vol 28, pp 25–32, 1967.
- V Jakowetz, W Rühle, K Breuninger & M Pilkuhn, Luminescence and photoconductivity of undoped p-GaSb, Phys stai sol (a), vol 2, pp 169–174, 1972.
- D Eifer & P J Etter, An investigation into apparent purity limit in GaSb, J Phys Chem Solids, vol 25, pp 451–460, 1964.
- F J Reid, R D Baxter & S E Miller, GaSb Prepared from non-stoichiometric melt, J Electrochem Soc, vol 113, pp 713–716, 1966.
- N T Bagrayev, A N Baranov, T I Voronina, Yu V Tolparov & Yu P Yakovlev, Podavlenie prirodnych akceptorov v GaSb, Pisma v ZhTF, vol 11, pp 117–121, 1985.
- M Lee, D J Nicholas, K E Singer & B Hamilton, A photoluminescence and Hall-effect study of GaSb grown by molecular beam epitaxy, J Appl Phys, vol 59, pp. 2895–2900, 1986.
- G Edelin & D Mathiot, A model for the determination of the defect concentrations in III-V compounds, Phil Mag, vol B42, pp 95–110, 1980.
- M Astles, H Hill, A J Williams, P J Wright & M L Young, Studies of the Gai-x InxAs1-x S by, quaternary alloy system I-liquid-phase epitaxial growth and assessment, J Electron Mater, vol 15, pp 41–49, 1986.
- A Katsui & C Uemura, LEC growth of GaSb single crystals using boric oxide, Jap J Appl Physics, vol 19, pp L318–L320, 1980.
- I Hirai & T Obokata, Growth of low dislocation density GaSb single crystals by Czochralski method, Jap J Appl Physics, vol 21, pp 956–957, 1982.
- B Cockayne, V W Steward, G T Brown, W R MacEwan & M L Young, The Czochralski growth of GaSb single crystals under reducing conditions, J Cryst Growth, vol 58, pp 267–272, 1982.
- W A Sunder, R L Barns, T Y Kometani, J M Parsey & R A Laudise, Czochralski growth and characterization of GaSb, J Cryst Growth, vol 78, pp 9–18, 1986.
- Laitdolt-Börnstein, Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Gruppe III, Band 17, Teilband d, SpringerVerlag, pp 12–51, 1984.
- W P Allred & R T Bate, Anisotropic segregation in InSb, J Electrochem Soc, vol 108, pp 258, 1961.
- S Kondo & S Miyazawa, Low dislocation density GaSb single crystals grown by LEC technique, J Cryst Growth, vol 56, pp 39–44, 1982.
- Y Ohmori, K Sugii, S Akai & K Matsumoto, LEC growth of Te-doped GaSb single crystals with uniform carrier concentration distribution, J Cryst Growth, vol 60, pp 79–85, 1982.
- S Miyazawa, S Kondo & M Naganuma, A novel encapsulant material for LEC growth of GaSb, J Cryst Growth, vol 49, pp 670–674, 1980.
- F Moravec & Y Tomm, A comparative study on the growth of GaSb, Cryst Res Technol, vol 22, pp K30–K33, 1987.
- A Katsui & C Uemura, GaSb single crystal growth in >111< direction, Jap J Appl Physics, vol 21, p 1106, 1982.
- F Moravec, V Sestáková, B Stepánek & V Charvát, Crystal growth and dislocation structure of gallium antimonide, Cryst Res Technol, vol 24, pp 275–281, 1989.
- K B McAfee, D M Gay, R S Hozack, R A Laudise, G Schwartz & WA Sunder, Thermodynamic considerations in the synthesis and crystal growth of GaSb, J Cryst Growth, vol 76, pp. 263–271, 1986.
- P Doubrava, F Moravec, V Sestáková, V Leseenko & E Kucys, Hole transport in GaSb with isovalent doping by In and B, Crystal Properties and Preparations, vols 19 and 20, pp 59–62, 1989.
- P C Mathur & S Jain, Hole transport properties in Gallium Antimonide from 77 K to 300 K, Phys Rev B, vol 19, pp –3158, 1979.
- M G Milvidsky, V B Osvensky & S S Shrifrin, Effect of depiog on formation of dislocation structure in semiconductor crystals, J Cryst Growth, vol 52, pp 396–403, 1981.
- M D' Olne Campos, A Gouskov, L Gouskov & J C Pons, Residual acceptors in natural GaSb and Gax, Sn1-x, Sb; their contribution to transport between 4.7 and 300 K, J Appl Phys, vol 44, pp 2642–2646, 1973.
- A Abrahám, to be published.
- W B Becker, A K Ramdas & H Y Fan, Energy band structure of gallium antimonide, J Appl Phys, Suppl vol 39, pp 2094–2102, 1961.
- V Roberts & J E Quarrinton, Accurate measurements of absorption in indium antimonide and gallium antimonide, J of Electronics, vol 1, pp 152–160, 1955–56.
- G N I Iluridze, A N Titkova & E I Tchaikina, Vnutrozonnoe pogloshchenie antimonida gallia p-tipa, Phy and Technics of Semicond, vol 21, pp 80–83, 1987.
- K Nakashima, Electrical and optical studies in gallium antimonide, J Appl Phys, vol 20, pp 1085–1094, 1981.
- V Riule, V Yakovets & S Pilkun, Izluchatelnaya rekombinacia s uchastiem akceptorov v GaSb, Izv Akad Nauk SSSR, ser fiz, vol 37, pp 570–572, 1973.
- N S Averkiev, A S Filipchenko & E I Tchaikina, Priroda linii izluchenia nelegirovanogo antimonida gallia, Fizika Poluprovodnikov, vol 7, pp 1273–1275, 1982.
- J Oswald, private communication.