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Original Articles

Quantum Confined Electronic and Photonic Devices

Pages 133-142 | Published online: 02 Jun 2015

REFERENCES

  • T Ando, A B Fowler & F Stem, Electronic properties of two dimensional systems, Review of Modern Physics, vol 54, pp 437–672, April 1982.
  • B R Nag & P K Basu, Two dimensional electron transport in semiconductors, in Physics of Semiconductors (Ed S Guha), Indian Physics Assocn, Bombay, 1982, pp 1–38.
  • P K Basu, Two dimensional electron gas: physics and devices, Physics News, vol 16, pp 86–95, Sept 1985.
  • P K Basu, The quantum Hall effect, Physics News, vol 17, pp 53–63, June 1986.
  • P K Basu, Some key properties of low dimensional electron gas in semiconductors, Bulletin Materials Science, vol 13, pp 65–74, Mar 1990.
  • A B Fowler, F F Fang, W E Howard & P J Stiles, Magneto-oscillatory conductance in silicon surfaces, Physical Review Letters, vol 16, pp 901–903, 1966.
  • L Esaki & R Tsu, Superlattice and negative differential conductivity in semiconductors, IBM Journal of Research and Development, vol 14, pp 61–65, 1970.
  • L L Chang & K Ploog, Eds, Molecular beam epitaxy and heterostructures, NATO ASI Series, Martinus Nijhof, Dordrecht, 1985, pp 1–719.
  • T P Pearsall, Two dimensional electronic systems for high speed device applications, Surface Science, vol 142, pp 529–544, July 1984.
  • H Morkoc, Modulation doped AlGaAs/GaAs FETs (MODFETs): analysis, fabrication and performance, in Molecular beam epitaxy and heterostructures, (Eds L L Chang & K Ploog), Martinus, Nijhof, Dordrecht, 1985, pp 625–676.
  • T J Drummond, W T Masselink & H Morkoc, Modulation doped GaAs/(AlGa)As heterojunction FET: MODFET, Proc IEEE, vol 74, pp 773–822, June 1986.
  • W A Hughes, A A Rezazadeh & C E C Wood, Heterojunction integrated circuits, in GaAs Integrated Circuits (Ed J Mun), Oxford BSP Professional Books, 1988, pp 376–429.
  • N Holonyak, R M Kolbas, R D Dupuis & P D Dapkus, Quantum Well heterostructure lasers, IEEE Journal Quantum Electronics, vol QE-16, pp 170–186, Feb 1930.
  • W T Tsang, Semiconductor lasers and photodetectors by molecular beam epitaxy, in Molecular beam epitaxy and heterostructures (Eds L L Chang & K Ploog), Martinus Nijhof, Dordrecht, 1985, pp 575–623.
  • N K Dutta, Physics of quantum well lasers, in Heterojunction band discontinuities: Physics and applications, (Eds F Capasso & G Margaritondo), North Holland, Amsterdam, 1987, pp 565–593.
  • Y Arakawa & A Yariv, Quantum well lasers—gain, spectra, dynamics, IEEE Journal Quantum Electronics, vol QE-22, pp 1887–1899, Sept 1986.
  • S Sehmitt-Rink, D S Chemla & D A B Miller, Linear and nonlinear optical properties of semiconductor quantum wells, Advances in Physics, vol 38, pp 89–188, 1989.
  • T H Wood, Multiple quantum well (MQW) waveguide modulators, Journal of Lightwave Technology', vol 6, pp 743–757, June 1988.
  • D S Chemla, DAB Miller & P W Smith, Nonlinear optical properties of GaAs/GaAlAs multiDle quantum well material: phenomena and applications, Optical Engineering, vol 24, pp 556–564, 1985.
  • D A B Miller, D S Chemla, T C Damen, T H Wood, C A Burrus, A C Gossard & W Wiegmann, The quantum well self-electrooptic effect device: optoelectronic bistability and oscillation, and self-linearized modulation, IEEE Journal Quantum Electronics, vol QE-21, PP 1462–1576, Sept 1985.
  • D A B Miller, Integrated quantum well switching devices, in Optical Switching in Low-Dimensional Systems, (Eds H Haug & L Banyai), NATO ASI Series, Plenum, New York, 1989, pp 1–8.
  • S Sen, F Capasso, F Bletram & A S Vengurlekar, Resonant Tunneling Bipolar Transistor (RTBT): new functional device for electronics of the future, Journal of IETE, vol 38, pp 120–132 Mar-Apr & May-Jun 1992.
  • G H Döhler, Doping superlattices, Journal of Vacuum Science & Technology, vol 16, pp 851–856, 1979.
  • P K Basu, C K Sarkar & S Kundu, Variation of thermo-power of two-dimensional electrons in GaAs and InGaAs at low temperatures, Surface Science, vol 196, pp 700–706, Mar 1988.
  • K Ploog, Microscopical structuring of solids by molecular beam epitaxy—spatially resolved materials synthesis, Angewandte Chemie, vol 27, pp 593–621, May 1988.
  • D A B Miller, D S Chemla, T C Damen, A C Gossard, W Weig-mann, T H Wood & C A Burrus, Electric field dependence of ootical absorption near the band gap of quantum well structures, Physical Review B, vol 32, pp 1043–1060, 1985.
  • D Roychaudhury, J B Roy & P K Basu, Density of two-dimensional electron gas in modulation doped GalnAs/AIInAs layers from a charge control analysis, Physica Status Solidi (a), vol 86, pp K79-K82, 1984.
  • A J Shey & W H Ku, An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge control formulation, IEEE Trans Electron Devices, vol ED-36, pp 2299–2306, Oct 1989.
  • J Nagle, S Hersee, M Krakowski, T Weil & C Weisbuch, Threshold current of single quantum well lasers: the role of the confining layers, Applied Phvsics Letters, vol 49, pp 1325–1327, Nov 1986.
  • P K Basu, Auger recombination rate in quantum well lasers: modification by e-e interactions in quasi two dimensions, Journal of Applied Physics, vol 56, pp 3344–3347, Dec 1984.
  • J Gowar, Optical Communication Systems, Prentice Hall of India, New Delhi, 1987, pp 340–345.
  • L A Lugiato, Optical bistability, Contemporary Physics, vol 24, pp 333–371, April 1983.
  • K H Brenner, Digital optical computing, Applied Physics B, vol 46, pp 111–120, 1988.

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