REFERENCES
- M Solomon & H Morkoc, Modulation-Doped GaAs/AlGaAs Heterojunction Field Effect Transistors (MODFETs), Ultrahigli- Speed Device for Supercomputer, IEEE Trans on Electron Dev ED-31, pp 1015–1027, 1984.
- D Delagebeaudeuf & N T Linh, Metal-(n) AlGaAs GaAs Two Dimentional Electron Gas FET, IEEE Trans on Electron Dev, ED-29, pp 955–960, 1982.
- R E Simon & K B Bhasin, IEEE Trans on Microwave Theory & Tech, MTT 34, p 1349, 1986.
- A Singhal, A Mishra & P Chakrabarti, Optical effects in modulation doped field effect transistor, Solid-state Electron, vol 39, 1214–1216, 1990.
- Y Mori, F Nakamura & N Watanabe, High electron mobility in selectively doped heterostructure grown by normal pressure metal-organic chemical vapour deposition, J Appl Phy, vol 60, pp 334–337, 1986.
- B R Nag, Theory of Electrical Transport in semiconductors. Pergamon Oxford, 1972.
- S M Sze, Physics of Semiconductor Devices, 2nd edn, Wiley Eastern, New Delhi, 1982.
- J E Harrison & J R Hauser, Theoretical calculation of electron mobility in ternary III-V compounds, J Appl Phy, vol 47, pp 292–300, 1976.
- J I Pankove, Optical Processes in semiconductors, Prentice-Hall Inc, Englewood cliffs, New Jersey, 1971