Optoelectronic Integreated Circuits for Photonic Systems

REFERENCES

• A Yariv, The beginning of integrated optoelectronic circuits, IEEE Trans Electron Devices, vol ED-31, p 1656, 1984.
   Web of Science ®Google Scholar
• I Hayashi, OEIC: Its concepts and prospects, Tech Dig, 4th IOOC, Tokyo, Japan, pp 170–174, 1983.
   Google Scholar
• A Yariv & S Margalit, Monolithic optoelectronics integration in III-V semiconductors, Tech Dig, 4th IOOC. Tokyo, Japan, pp 181–183, 1983.
   Google Scholar
• J K Carney, M J Helix, R M Kolbas, S A Jamison & S Ray, Monolithic optoelectronic/electronic circuits, Tech Dig, GaAs IC Symposium, New Orleans, LA PP 38–41, 1982.
   Google Scholar
• N Bar-Chaim, S Margalit, A Yariv & I Ury, GaAs integrated optoelectronics, IEEE Trans Electron Devices, vol ED-29, pp 1372–1381, 1982.
   Web of Science ®Google Scholar
• U Koren, S Margalit, T R Chen, K L Yu, A Yariv, N Barchaim. K Y Lau & I Ury, Recent developments in monolithic integration of InGaAs/InP optoelectronic devices, IEEE J Quantum Electronics, vol QE-10, pp 1653–1662, 1982.
   Google Scholar
• N Bar-Chaim & I Ury, Integrated optoelectronics, IEEE Spectrum, pp 38–45, 1982.
   Google Scholar
• S R Forrest, Monolithic optoelectronic integration a new component technology for high wave communications, J of Light wave Technology, vol LT-3, pp 1248–1263, 1985.
   Web of Science ®Google Scholar
• S R Forrest, Optoelectronic integrated circuits, Proc IEEE, vol 75, pp 1488–1497, 1987.
   Web of Science ®Google Scholar
• O Wada, T Sakurai & T Nakagami, IEEE J of Quantum Electronics, vol QE-22, pp 805–821, 1986.
   Web of Science ®Google Scholar
• C P Lee, S Margalit & A Yariv, Double heterostructure GaAs/GaAIAs injection lasers on SI substrates using carrier crowding Appl Phys Lett, vol 31, p 281, 1977.
   Google Scholar
• D Wiet, N Bar-Chaim, S Margalit, I Ury, M Yust & A Yariv, Low threshold Be implemented (GaAl) As laser on SI substrate, IEEE Quantum Electronic, vol QE-16, pp 390–391, 1980.
   Web of Science ®Google Scholar
• C P Lee, S Magalit, I Ury & A Yariv, GaAs/GaAlAs injection lasers on SI substrates using laterally diffused junction, Appl Phys Lett, vol 32, pp 410–412, 1978.
   Web of Science ®Google Scholar
• H Kumabe, T Tanaka, H Namizki, M Ishii & N Susaki, High temperature single mode CW operation with a junction up TJS laser, Appl Phys Lett, vol 33, pp 38–39, 1978.
   Web of Science ®Google Scholar
• N Bar-chaim, J Kalz, I Ury & A Yariv, Burried heterostructure AlGaAs lasers on SI substrate, Electronics Lett, vol 17, pp 108–109, 1981.
   Google Scholar
• W T Tsang, Extremely low threshold (AIGa)As graded-index wave, guide separate—confinement heterostructure lasers grown by molecular beam epitaxy, Appl Phys Lett, vol 40, pp 217-219. 1982.
   Web of Science ®Google Scholar
• S D Hersee, M Baldy, P Assenat, B De Cremoux & J P Duchemim, Very low threshold GRIN-SCH GaAs/AlGaAs laser structure grown by OM-VPE, Electronics Lett, vol 18, pp 870–871, 1982.
   Web of Science ®Google Scholar
• O Wada, T Sanada, M Kuno & T Fujii, Very low threshold current ridge-waveguide AlGaAs/GaAs single quantum well lasers, Electrons Lett, vol 21, pp 1025–1026, 1985.
   Web of Science ®Google Scholar
• S Ymakoshi, O Wada, T Fujii, S Hiyamizu & T Sakurai, High performance ridge-wave guide AlGaAs/GaAs multi quantum well laser grown by molecular beam epitaxy, Tech Dig, IEDM, San Fransisco, CA PP 342–345, 1982.
   Google Scholar
• S Yamakoshi, T Fujii, O Wada & T Sakurai, Extremely low threshold current AlGaAs/GaAs ridge waveguide GRIN-SCH lasers grown by MBE, abstracts 9th IEEE Int Semiconductor laser Conf Rio de Janeiro, Brazil, pp 24–25, 1984.
   Google Scholar
• V Didiuk & S H Groves, Lateral photodetectors on semi-insulating InGaAs and InP, Appl Phys Lett, vol 46, pp 157–159, 1985.
   Web of Science ®Google Scholar
• J Barnard, H Ohno, E C Wood & L F Eastman, Integrated double heterostructure GaInAs photoreceiver with automatic gain control, IEEE Electron Devices Lett, vol EDL-2, pp 79, 1981.
   Google Scholar
• A Y Cho, C G Bethea & P A Garbinski, Bias-free selectively doped AlGaAs—GaAs picosecond photodetectors, Appl Phys Lett, vol 41, pp 282–284, 1982.
   Web of Science ®Google Scholar
• N Matsuo, H Ohno & H Hasegawa, Monolithic integration of GaAs photoconductive detectors and MESFET's with distributed coupling to optical fibers, Japan, J Appl Phy, vol 23, pp L648–L650, 1984.
   Web of Science ®Google Scholar
• M Yust, N Bar-Chaim S H Izadpanah, S Margalit, I Ury, D Wilt & A Yariv, A monolithically integrated optical repeater, Appl Phys Lett, vol 35, pp 795–796, 1979.
   Web of Science ®Google Scholar
• T Sugeta, T Urisu, S Sakata & J Mizushima, Metal semiconductor metal photodetector for high speed optoelectronic circuits, Japan J Appl Phys, vol 19, supp 19–1, pp 459–464, 1980.
   Google Scholar
• C W Slaymen & L Figucroa, Frequency and pulse response of a novel high speed interdigital surface photoconductor, IEEE Electron Devices Lett, vol EDL-2, pp 112–114, 1981.
   Web of Science ®Google Scholar
• W Roth, H Schumacher, J K Luge, H J Geelen & H Beneking, The DSI diode—a fast large area optoelectronic detector, IEEE Trans Electron Devices, vol ED-32, pp 1034–1036, 1985.
   Web of Science ®Google Scholar
• J Katz, N Bar-Chaim, P C Chen, S Magalit, I Ury, D Wilt, M Yust & A Yariv, A monolithic integration of GaAs/GaAlAs bipolar transistor and hetrostructure laser, Appl Phys Lett, vol 37 pp 211–213, 1980.
   Web of Science ®Google Scholar
• N Bar-Chim, Ch Harder, J Katz, S Margalit & A Yariv, Monolithic integration of GaAIAs buried-heterostructure laser and a bipolar phototransistor, Appl Phys Lett, vol 40, pp 556–557, 1982.
   Web of Science ®Google Scholar
• H Matsucda, S Sasaki & M Nakamura, GaAs optoelectronic integrated light sources, J Lightwave Technol, vol LT-I, pp 261–269, 1983.
   Google Scholar
• D R Kaplan & S R Forrest, Electrical cross talk in PIN arrays, I theory, J Lightwave Technology, vol LT-4, p 1460, 1986.
   Web of Science ®Google Scholar
• S Semura, T Ohta, T Kuroda & H Nakashima, AlGaAs/GaAs multiquantum well lasers with buried multiquantum well optical guide, Japan, J Appl Phys, vol 24, pp L548–L550, 1985.
   Web of Science ®Google Scholar
• P Gavrilovic, K Mechan, J E Epier, N Holonyak, Jr, R D Burnham, R L Thorton & W Streifer, Impurity—disordered coupledstripe AlGaAs/GaAs quantum well laser, Appl Phys Lett, vol 46, pp 857–859, 1985.
   Web of Science ®Google Scholar
• L W Cook, H K Tashima, N Tabatabale, T S Low & C E Stillman, High purity InP and InGaAsP grown by liquid phase epitaxy. J Crystal Growth, vol 56, p 475, 1982.
   Web of Science ®Google Scholar
• A Y Cho, Growth of III-V semiconductors by molecular beam epitaxy and their properties, Thin Solid Films, vol 100, p 291, 1983.
   Web of Science ®Google Scholar
• G H Olsen, Vapor—phase epitaxy of GaInAsP in GalnAs alloy Semiconductors, T P Pegrsall (Ed), New York, N Y Wiley, Ch 1, 1982.
   Google Scholar
• J P Hirtx, J P Larivain, D Leguen, M Razehi & J P Duchemin, Low pressure metalorganic growth and characterization of GaInAsP on InP substrates, in GaAs and related compounds, 1980, vol 29, (Conf Ser No 56) Bristol U K, Inst of Physics, 1981.
   Google Scholar
• J Cheng, R Stall, S R Forrest, J Long, C L Cheng, G Gulh, R Wunder & V G Riggs Self-aligned InGaAs/SI/N InP junction field effect transistors IEEE Electron Devices Lett, vol EDL-6, p 384, 1985.
   Google Scholar
• R M Kolbas, J Alrokwah, J K Carney, D H Bradshaw, B R Einer & J R Biard, Planar monolithic integration of a photodiode and a GaAs preamplifier, Appl Phys Lett, vol 43 pp 821–823, 1983.
   Web of Science ®Google Scholar
• M E Kim, C S Hong, D Kasemet & R A Milano, GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications, IEEE Electron Device, Lett, vol EDL-5, pp 306–309, 1984.
   Web of Science ®Google Scholar
• S Miura, H Machida, O Wada, K Nakai & T Sakurai, Monolithic integration of PIN photodiode and a field effect transistor using a new fabrication technique-graded, step process, Appl Phys Lett, vol 46 pp 389–391, 1985.
   Web of Science ®Google Scholar
• K Ige & B I Miller, Chemically etched-mirror GaInAsP/InP laser, Review IEEE J Quantum Electronics, vol QE-18, pp 22–29, 1981.
   Web of Science ®Google Scholar
• M Wada, K Hamada K Itoh & G Kano, A new chemical etching technique for formation of cavity facets of GaAlAs lasers, abstracts, 9th IEEE Int Semiconductor Laser Conf, Rio de Janeiro, Brazil, pp 182–183, 1984.
   Google Scholar
• N Bouadma, J Riou & A Kampfer, Low threshold GaAs/GaAlAs BH lasers with ion beam etched mirrors, Electrons Lett, vol 21, pp 566–568, 1985.
   Web of Science ®Google Scholar
• L A Goldren, J Paruya, B L Miller & J A Rentshler, Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics, IEEE J Quantum Elect, vol QE-18, pp 1679–1688, 1982.
   Web of Science ®Google Scholar
• O Mikami, A Akiya, T Saitoh & H Nakagome, 1.5 μm GaInA.sP/BH laser with a reactive ion etched facet, Tech Dig, 4th IOOC, Tokyo, Japan, pp 176–177, 1983.
   Google Scholar
• K Baluvelt, N Bar-chaim, D Fekete, S Margalit & A Yariv, AlGaAs lasers with microcleaved mirrors suitable for monolithic integration, Appl Phys Lea, vol 40, pp 289–291, 1982.
   Web of Science ®Google Scholar
• O Wada, S Yamakoshi, T Fuji, S Hiyamizu & T Sakurai, AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode, Elect Lett, vol 18, pp 189–190, 1982.
   Web of Science ®Google Scholar
• C P Lee, S Margalit, I Ury & A Yariv, Integration of an injection laser with a Gunn oscillator on a semiconducting GaAs substrate, Appl Phys Lett, vol 32, pp 806–807, 1978.
   Web of Science ®Google Scholar
• O Wada, T Sanad. H Hamaguchi, T Fujii & T Sakurai, Monolithic integration of a double heterostructure light emitting diode and a field effect transistor amplifier using molecular beam grown AlGaAs/GaAs, Appl Phys Lett, vol 43, pp 345–347, 1983.
   Web of Science ®Google Scholar
• O Wada, T Sanada & T Sakurai, Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver, IEEE Electron Device Lett, vol EDL-3 pp 305–307 1982.
   Web of Science ®Google Scholar
• I Ury, K Lau, N Bar-Chaim & A Yariv, Very high frequency GaAlAs laser FET monolithic integrated circuit, Appl Phys Lett, vol 41, pp 126–128, 1982.
   Web of Science ®Google Scholar
• J K Carney, M J Helix & R M Kolbas, Gigabit optoelectronic transmitter, Tech Dig, GaAs IC Sypm, Phoenix, A2, pp 48–51, 1983.
   Google Scholar
• T Sanada, S Yamakoshi, H Hamaguchi, O Wada, T Fujii, T Horimatsu & T Sakurai, Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate, Appl Phys Lett, vol 46, pp 226–228, 1985.
   Web of Science ®Google Scholar
• T Horimatsu, T Iwama, Y Oikawa, H Hamaguchi & T Nakagami, Compact transmitter module with a monolithic laser/driver circuit, Dig Tech papers OFC, San Diego, CA pp 32–33, 1985.
   Google Scholar
• C S Hong, D Kasemet, H E Kin & R A Milano, Integrated quantum well laser transmitter compatible with ion-implanted circuits, Electron Lett, vol 20, pp 733–735, 1985.
   Web of Science ®Google Scholar
• H Matsueda & M Nakamura, Monolithic integration of a laser diode, photomonitor and electric circuits on a semi insulating GaAs substrate, Appl Opt, vol 32, pp 779–781, 1984.
   Google Scholar
• H Matsueda. M Hirao, T P Tanaka & M Nakamura, Integration of optical devices with electronic circuits for high speed optical communications, Proc 12th Int Symp gallium arsenide and related compounds, Inst of Phys, Karuizawa, Japan, 1985.
   Google Scholar
• M Kuno, T Sanada, H Nobuhara, M Makiuchi, T Kumai, M Ito, K Nakai, T Horimatsu & T Sakurai, Monolithic four channel photodiode/amplifier receiver array integrated on a GaAs substrate, J Lightwave Techno/, vol LT-4, p 1694, 1986.
   Web of Science ®Google Scholar
• T Fukuzawa, M Nakamura, M Hirao, T Kuroda & J Umeda, Monolithic integration of a GaAlAs injection laser with a Schottky gate field effect transistor, Appl Phys Lett, vol 36, pp 181–183, 1980.
   Web of Science ®Google Scholar
• J Shibata, I Nakao, Y Sasai, S Kimura, N Hase & H Serizawa, Monolithic integration of an InGaAsP/InP laser diode with hetero-junction bipolar transistor, Appl Phys Lett, vol 45, pp 191–193, 1984.
   Web of Science ®Google Scholar
• U Koren, K L Yu, T R Chen, N Bar-Chaim, S Margalit & A Yariv, Monolithic integration of a very low threshold GaInAsP laser and metal-insulator—semiconductor field effect transistor on semi-insulating InP, Appl Phys Lett, vol 40, pp 643–645, 1982.
   Web of Science ®Google Scholar
• P C Chen, H D Law, E A Rezck & J Weller, Monolithic integration of laser—FET on InP, Tech Dig, 4th IOOC, Tokyo, Japan, pp 190–191, 1983.
   Google Scholar
• K Kasahara, J Hayashi & H Nomura, Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET, Electron Lett, vol 22, pp 618–619, 1984.
   Google Scholar
• K Kasahara, T Tera Kado, A Suzuki & S Murata, Monolithically integrated high speed light source using 1.3 μm wavelength DF B-DC-PBH laser, Tech Dig, 5th IOOC, Venezea, Italy pp 295–298, 1985.
   Google Scholar
• N Bar-Chaim, K Y Lau, I Ury & A Yariv, Monolithic optoelectronic integration of a GaAIAs laser a field effect transistor and a photodiode, Appl Phys Lett, vol 44, pp 941–943, 1984.
   Web of Science ®Google Scholar
• S Hata, M Jkeda, Y Noguthi & S Kondo, Monolithic integration of an InGaAs PIN photodiode, two InGaAs column gate FET's and an InGaAsP laser for optical regeneration, extended abstracts, 17th Conf Solid State devices & Material, Tokyo, Japan, pp 79–92, 1985.
   Google Scholar
• S Miura, O Wada, H Hamaguchi, M Ito, M Makiuchi, K Nakai & T Sakurai, A monolithically integrated AlGaAs/GaAs PIN/FET photoreeeiver by MOCVD, IEEE Electron Device Lett, vol EDL-4, pp 375–376, 1983.
   Web of Science ®Google Scholar
• S Miura, H Machida, O Wada, K Nakai & T Sakurai, Monolithic integration of a PIN photodiode and a field effect transistor using a new fabrication technique-graded step process, Appl Phys Lett, vol 46, pp 389–391, 1985.
   Web of Science ®Google Scholar
• O Wada, H Hamaguchi, S Miura Ni Makiuchi, K Nakai, T Hori-matsu & T Sakurai, AlGaAs/GaAs PIN photodiode/preamplifier monolithic photoreeeiver integrated on a semi-insulating GaAs substrate, Appl Phys Lett, vol 46, pp 981–983, 1985.
   Web of Science ®Google Scholar
• N Matsuo, H Ohno & H Hasegawa, Monolithic integration of GaAs photoconductive detectors and MESFETs with distributed coupling optical fibers, Japan J Appl Phys, vol 23, pp L648–L650, 1984.
   Web of Science ®Google Scholar
• C Y Chen, N A Olsson, CW Tuand & P A Gaybinski, Monolithic, integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor Appl Phys Lett, vol 46, pp 681–683, 1985.
   Google Scholar
• O Wada, H Ramaguchi, M Makiuchi, T Kumai, M Ito, K Nakai, T Horimatsu & T Sakurai, Monolithic four channel photodiode/amplifier receiver array integrated on a GaAs substrate, J Ligh, wave Technol, vol LT-4, p 16945. 1986.
   Google Scholar
• R F Dehney, R E Nahory, M A Pollack, A A Ballman, E D Beebe, J C Dewinter & R J Martin, Integrated InGaAs/FET photoreeeiver, Elect Lett, vol 16, pp 353–355, 1980.
   Google Scholar
• J Barnard, H Ohno, E C Wood & L F Eastmare, Integrated double heterostructure GalnAs photoreeeiver with automatic gain control, IEEE Electron Device Lett, vol EDL-2, pp 7–9, 1981.
   Web of Science ®Google Scholar
• K Ohmaka, K Inoue, T Uno, K Hasegawa, N Hase, & H Serizawa, A planner InGaAs PIN-/JEET fiber-optic detector, IEEE J Quantim Electronics, vol QE-21, pp 1236–1240, 1985.
   Web of Science ®Google Scholar
• P J G Dawe, D A H Spear & G H B Thomson, Embedded GalnAs PIN diode and InP based for optoelectronic integrated circuit, Tech Dig, IOOC, vol 1, Venezie, Italy, pn 307–310, 1985.
   Google Scholar
• K Kasahara, J Haashi, K Makita, K Taguchi, A Suzuki, H Nomara & S Matsushita Monolithically integrated InGaAs/InP MISFET photoreeeiver, Elect Lett, vol 20, pp 314–315.
   Google Scholar
• O P Daga, B R Singh & W S Khokle Proc Int Conf on Phys & Tech, Compound Semiconductor, Madras, p 25, 1985.
   Google Scholar
• B R Singh, M K Sharma, H S Kothari, O P Daga, J K Singh & W S Khokle, Int Symp on Electronic Devices, circuits and system, ISELDECS-87, IIT, Kharagpur, Dec 16–17, 1987.
   Google Scholar
• J K Singh, A Roy Bardhan, H S Kothari, B R SiDgh & W S Khokle, Proc IEEE, vol 75, p 850, 1987.
   Web of Science ®Google Scholar
• J K Singh, O P Daga, H S Kothari, B R Singh & W S Khokle, Microelectronics J, vol 19, p 23, 1988.
   Google Scholar
• B R Singh, J K Singh, O P Daga, H S Kothari & W S Khokle, Int Conf on Physics of Semiconductor Devices, New Delhi, Dec 11–16, 1989.
   Google Scholar
• K S Yadav, D C Dumka, R C Ramola, S Johri, H S Kothari & B R Singh, Int Conf on Physical concepts for Novel Optoelectronic Devices applications, SPIE Eurogress Achen FRG, Oct 28, Nov 2, 1990.
   Google Scholar