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IETE Journal of Research Volume 40, 1994 - Issue 4
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Original Articles

Measurement of Minority Carrier Diffusion Length and Band Gap Narrowing in Heavily Doped n-Type Base Regions of Silicon p-n-p Lateral Transistors

M S TyagiDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur208 016, India.
, FIETE
Pages 155-161 | Received 21 Jul 1993, Published online: 02 Jun 2015

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