Silicon Based Microwave and Millimeter Wave Sources Indigenous Technology Development

REFERENCES

• S Ahmad, J Akhtar, A S V Sarma, R Gopal, I Ahmad & M Kumar, Silicon MM Wave Impatts, IETE Tech Review, vol 10, no 4, pp 341–349, July-August 1993.
   Google Scholar
• S Ahmad, J Freyer & W Harth, High Power Low Noise Pt- Schottky Baritt Diode, Proc Sixth European Microwave Conference, Rome, Italy, pp 30–35, Sept 1976.
   Google Scholar
• S Ahmad & H P Vyas, Space Charge Effects in Steady State Characteristics of Avalanche and Trapatt Diodes, 5th Annual Convention of Institution of Telecom Engrs, New Delhi, Feb 1972.
   Google Scholar
• S Ahmad, DC Design of MM-Wave Impatts on Desk Top Computer, Intl Conf on Infrared and Millimeter Waves, Florida, USA, 9–13 Dec 1985.
   Google Scholar
• S Ahmad, A Fast Algorithm for DC Design of Millimeter Wave Impatts, Int J of Infrared and Millimeter Waves, vol 6, no 11, pp 1103–1120, 1985.
   Google Scholar
• M Mustafa & S Ahmad, Temperature Dependent Barrier Injection in Transit Time Devices, J App Phys, vol 53, no 9, pp 6236–6239, Sept 1982.
   Web of Science ®Google Scholar
• S Ahmad, J Freyer & M Classen, A Simple Method of Determining Large Signal Negative Resistance of Baritt Diodes, Solid State & Electron Devices, vol 1, no 4, pp 130–132, July 1977.
   Web of Science ®Google Scholar
• S Ahmad, Large Signal Analysis of Baritt Diodes, Symposium on Electron Devices, CEERI, Pilani, September 1978.
   Google Scholar
• A S V Sarma & S Ahmad, In Process Chatracterisation of Material for mm-Wave Impatt, Proc 2nd Asia Pacific Microwave Conf Beijing, China, pp 389–390, 1988.
   Google Scholar
• Improved Process for Making Packages for Micro and Millimeter Wave Semiconductor Devices, Patent No. 267/DEL/92.
   Google Scholar
• S Ahmad, A Punch-through Injection Transit Time Diode Oscillator at X-Band, Seminar on Development of Indigenous Electronic Compoments Industry, Instituion of Engineers (India) Karnataka Centre, Bangalore, India, Sept 1974.
   Google Scholar
• Test Report on X-Band Impatts sent to Institute of Radio Physics, Calcutta University, Calcutta, 1982.
   Google Scholar
• Test Report, ISRO, Ahmedabad, 1993
   Google Scholar
• S Ahmad & M Kumar, Unpublished results.
   Google Scholar
• Ahmad & J Freyer, Design and Development of High Powr Microwave Silicon Baritt Diodes, IEEE Trans, vol ED-26, no 9, pp 1370–1372. Sept 1979.
   Google Scholar
• S Ahmad, A S V Sarma, J Akhtar, Ram Gopal, I Ahmad & M Kumar, Batch Fabrication of Millimetre Wave Silicon Impatts, Journal of the IETE, vol 41, no 1, pp 71–75, January-February, 1995.
   Google Scholar
• An Improved Process for Selective Electroplating of Noble Metals in Fabrication of Heat Sinks for High Frequency Injection Controlled Transit Time Effect Semiconductor Devices, Patent No. 264/DEL/92.
   Google Scholar
• I Ahmad & S Ahmad, Skin Effect Considerations in Metallised Substrates of Injection Controlled Transit Time Effect Devices at mm-Wave Frequencies, Solid State Electronics, vol 33, no 8, pp 993–998, 1990.
   Google Scholar
• I Ahmad & S Ahmad, Influence of a Non-uniformly Doped Semiconductor Region on Skin Effect Resistance of Ohmic Contacts in mm-Wave Impatts, Solid State Electronics, vol 35. no 7, pp 883–889, 1992.
   Web of Science ®Google Scholar
• A S V Sarma & S Ahmad, RF Current Distribution Across Metal-Semiconductor Ohmic Contacts in MM-Wave Impatts, Solid State Electronics, vol 38, no 6, pp 1209–1214, 1995.
   Web of Science ®Google Scholar
• An Improved Process of Controlled Thinning of Semiconductor Wafer During Fabrication of Micro and Millimeter Wave Injection Controlled Transit Time Effect Semiconductor Devices, Patent No. 265/DEL/92.
   Google Scholar
• S Ahmad, M Mustafa & J Akhtar, On Selective Electroplating of Gold in Fabrication of MIC's, Microelectronics and Reliability, vol 21, no 5, pp 727–730, 1981.
   Web of Science ®Google Scholar
• S Ahmad, Enhanced Electroplating Upgrades MIC Fabrication, Microwaves, vol 20, no 11, p 77, October 1981.
   Google Scholar
• S Ahmad, J Akhtar & M Mustafa, A New Process of Grid Structure Formation for End Point Detection during Susbtrate Thinning of Transit Time Devices, Microelectronics and Reliability, vol 25, no 3, p 449, 1985.
   Google Scholar
• An Improved Process for the Production of High Frequency Semiconductor Devices, Patent No. 263/DEL/92.
   Google Scholar
• S Ahmad, unpublished work.
   Google Scholar
• S Ahmad & J Freyer, Measurement of Heat Flow Resistance in Baritt Diodes, Elect Lett, vol 12, no 20, pp 527–528. 30th Sept. 1976.
   Web of Science ®Google Scholar
• S Ahmad & J Freyer, High Power Pt-Schottky Baritt Diodes, Elect Lett, vol 12. no 10, pp 238–239, 1976.
   Web of Science ®Google Scholar
• S Ahmad, A Fast Method of Calculation of Avalanche Breakdown Voltage of Semiconductor p-n Junction, Proc IEEE, vol 69, no 4, pp 478–480, April 1981.
   Web of Science ®Google Scholar
• S Ahmad, R Gopal, S Gupta & J Gupta, unpublished work.
   Google Scholar
• J Akhtar & S Ahmad, Temperature Distribution in mm- Wave Impatt Diodes-CW Case, Proc International Conference on Millimeter Wave and Microwave, DEAL Dehradun, India, pp 129–130, Dec 19–21, 1990.
   Google Scholar
• S Ahmad, Drift Velocity of Hot Electrons in Silicon, Symposium on Solid State Microwave Devices, University of Roorkee, Roorkee, India, Jan 1971.
   Google Scholar
• S Ahmad & W S Khokle, Field Dependence of Ionisation Rates of Electrons in Silicon, Elect Lett, vol 5, no 21, pp 536–537, 16th Oct 1969.
   Web of Science ®Google Scholar
• S Ahmad, O P Daga & W S Khokle, Energy and Momentum Loss Rates for Hot Electrons in Silicon, Phys Stat Solidi, vol 40, pp 631, 1970.
   Google Scholar
• S Ahmad, On Convergence of Transport Equation Solution for mm-Wave Impatt I-V Characteristics: Steady State, Proc 2nd Asia Pacific Microwave Conference, Bejing, China, pp 379–380, Oct 26–28, 1988.
   Google Scholar
• I Ahmad & S Ahmad, Skin Effect in mm-Wave ITT Devices, ibid, pp 395–396.
   Google Scholar
• S Ahmad, Skin Effect Resistance of Semiconductor Substrate in Injection controlled Transit Time Effect Devices at mm-Wave Frequencies, Proc Vth International Workshop on the Physics of Semiconductor Devices, pp 345–354, 11–16 Dec 89.
   Google Scholar
• S Ahmad, unpublished work.
   Google Scholar
• S Ahmad & W S Khokle, Transition Probability of Impact Ionisation in Silicon, J Phys & Chem Solids, vol 28, pp 2499–2507, 1967.
   Web of Science ®Google Scholar
• J Akhtar & S Ahmad, Three Dimensional Current Distribution inside a Semiconductor below a Small Area Metal Contact, Proc Intl Conf on Phys and Tech of Compens Semiconductors, IIT, Madras, Feb 20–22, 1985.
   Google Scholar
• J Akhtar & S Ahmad, Relaxation Parameter and Step Size Optimisation in Piosson's Equation Solution for Semiconductor Simulation in two Dimensions, IVth NASECODE Conf, University of Dublin, Ireland, June 1985.
   Google Scholar
• S Ahmad, Breakdown Study in Semiconductor Devices-Two Dimensional Effects, Proc of Third Intl Workshop on Phys of Semiconductor Devices, Madras, pp 84–92, 1985.
   Google Scholar
• A Novel Process of Fabricating Millimeter Wave Injection Controlled Transit Time Effect Semiconductor Devices, Patent No NF-25/93.
   Google Scholar
• S Ahmad, Characterize Baritts By Analysing I-V Curves, Microwaves, vol 17, no 7, pp 62–64, July 1978.
   Web of Science ®Google Scholar
• S Ahmad & J Freyer, Baritt Diodes for Ku-Band Frequencies, Fourth European Specialists Workshop on Active Microwave Semiconductor Devices, Baden, Austria, April 27–29, 1977.
   Google Scholar
• S Ahmad, Injection Phase Delay in High Power Baritt Oscillators, Solid State Electron Devices, Proc IEE-Part I, vol 127, no 3, pp 109–110, June 1980.
   Google Scholar
• S Ahmad, J P Pachauri & J Akhtar, A Simple Method of Depositing Oxygen Free Titanium Silicide Film Using Vacuum Evaporation, Thin Solid Films, vol 143, pp 155–162, 1986.
   Web of Science ®Google Scholar
• S Ahmad, J P Pachauri & J Akhtar, Deposition of Silicon Rich Titanium Silicide for Multilevel Metallisations in VLSI Circuits, Proc Intl Conf on Microelectronics and Fibre Optics, pp 231–234, 1987.
   Google Scholar
• S Ahmad, A S V Sharma & S Gupta, A Modular Test Set-up for Digital Integrated Circuits, ibid, pp 187–196, 1987.
   Google Scholar
• J Akhtar & S Ahmad, Study of Avalanche Multiplication in Planar Terminated Junctions, Solid State Electronics, vol 33, no 11, pp 1459–1466, 1990.
   Web of Science ®Google Scholar