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IETE Journal of Research Volume 46, 2000 - Issue 4
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Original Articles

Numerical Simulation for Estimating the Optically Controlled Characteristics of an Ion-Implanted Si-MESFET

P ChakrabartiDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005, India.View further author information
,
M MadheswaranDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005, India.View further author information
,
A GuptaDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005, India.
,
N A KhanDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005, India.
&
V RajamaniDepartment of Electronics and Communication Engineering, Mohamed Sathak Engineering College, Kilakkari623 806, India.View further author information
Pages 205-214 | Published online: 26 Mar 2015

REFERENCES

  • C Bacck. G Elze & W Wolf, GaAs MESFET: A high speed optical detector. Electron Lett, vol 13, no 7, p 193, 1977.
  • H Mizuno, Microwave characteristics of an optically controlled GaAs MESFET, IEEE Trans Microwave Theory Tech, vol MTT-31, pp 596–599, 1983.
  • A A De Salles, Optical control of GaAs MESFET, IEEE Trans Microwave Theory' Tech. vol MTT-31, pp 812–820, 1983.
  • R N Simons, Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET, IEEE Trans Microwave Theory Tech. vol MTT-35, pp 1444–1455, 1987.
  • Robert B Darling & John P Uyemura, Optical gain and large signal characteristics of illuminated GaAs MESFET, IEEE J Quantum Elect, vol QE-32, pp 1160–1171, 1987.
  • V K Singh & B B Pal, Optically controlled switching characteristics of Silicon MESFET, Solid State Electron, vol 30, pp 267–272, 1987.
  • V K Singh, S N Chattopadhyay & B B Pal, Optically controlled characteristics of an ion-implanted silicon MESFET, Solid State Electron, vol 29. pp 707–711, 1986.
  • P Chakrabarti, Comment on optically controlled characteristics of an ion-implanted Si-MESFET by V K Singh et al. Solid State Electron, vol 34, p 1185. 1991.
  • B B Pal & S N Chattopadhyay, A modified I-V relation for ion-implanted Si-OPFET, Solid State Electron, vol 34, pp 1183–1184. 1991.
  • P Chakrabarti, R Anand & V Srinivasa Rao, I-V characteristics of an optically controlled Si-MESFET, Solid State Electron, vol 35, pp 587–592, 1992.
  • S M Sze, Physics of Semiconductor Devices, Wiley Eastern Ltd., 2nd Edition, New Delhi, 1980.

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