Reliability Issues in strained-Si MOSFETs

References

• P R Chidambaram, B A Smith, L H Hall, H Bu, S Chakravarthi, Y Kim, A V Samoilov, A T Kim, P J Jones, R B Irwin, M J Kim, A L P Rotondaro, C F Machala & D T Grider, 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS, in IEEE VLSI Tech Symp Dig, pp 48–49, 2004.
   Google Scholar
• C K Maiti, S Chattopadhyay & L K Bera, Strained-Si Heterostructure Field Effect Devices, CRC Press, Boca Raton, 2007.
   Google Scholar
• R Oberhuber, G Zandler & P Vogl, Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s, Phys Rev B, vol 58, pp 9941–9948, 1998.
   Google Scholar
• M V Fischetti, Z Ren, P M Solomon, M Yang & K Rim, Six-band k.p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain and silicon thickness, J Appl Phys, vol 94, pp 1079–1095, 2003.
   Google Scholar
• C K Maiti, N B Chakrabarti & S K Ray, Strained Silicon Heterostructures: Materials and Devices, The IEE, UK, 2001.
   Google Scholar
• J Weber & M I Alonso, Near-band-gap photo-luminescence of SiGe alloys, Phys Rev B, vol 40, pp 5683–5693, 1989.
   Google Scholar
• R People, Physics and Applications of GexSi1−x Strained-Layer Hcterostructures, IEEE J Quantum Elec, vol 22, pp 1696–1710. 1986.
   Google Scholar
• L Yum, J R Watling, RCW Wilkins, M Borici, J R Barker, A Asenov & S Roy, Si/SiGe heterostructure parameters for device simulations, Semicond Sci Technol, vol 19, pp 1174–1182, 2004.
   Google Scholar
• C K Maiti & G A Armstrong, Applications of Silicon-Germanium Heterostructure Devices. Inst of Physics Pub, UK, 2001.
   Google Scholar
• Thi Vogelsang & K R Hofmann, Electron Nobilities and High-field Drift Velocities inn Strained Silicon on Silicon-germanium Substrates in IEEE Dev Res Conf Dig, pp 34–35, 1992.
   Google Scholar
• Th Vogelsang & K R Hofmann, Electron transport in strained Si layers on Si1−x Gex substrates. Appi Pliys Lett, vol 63, pp I86–188, 1993.
   Google Scholar
• Th Vogelsang & K R Hofmann, Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates, IEEE Trans Electron Dev, vol 39, pp 2641–2642, 1992.
   Google Scholar
• T Vogelsang, F Hofmann, H Schafer, L Risch & K Hofmann, Modeling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and Transconductance, in Ext Abs Conf on Solid State Devices and Materials, pp 877–879, 1994.
   Google Scholar
• T Manku, J M McGregor. A Nathan, D J Roulston, J P Neol & D C Houghton, Drift hole mobility in strained and unstrained doped Si1−xGex, alloys, IEEE Trans Electron Dev, vol 40, pp 1990–1995, 1993.
   Google Scholar
• N D Arora, J R Hauser & D J Roulston, Electron and Hole Mobility in Silicon as a Function of Concentration and Temperature, IEEE Trans Electron Dev, vol 29, pp 292–295, 1982.
   Google Scholar
• S H Olsen, A G O’Neill, L S Driscoll, S Chattopadhyay, KSK Kwa, A M Waite, Y T Tang, A G R Evans & J Zhang, Optimization of Alloy Composition for High-Performance Straincd-Si-SiGe N-Channel MOSFETs, IEEE Trans Electron Dev, vol 51, pp 1156–1163, 2004.
   Google Scholar
• Silvaco International, Santa Clara, CA, VWF Interactive Tools User’s Manual, 2004.
   Google Scholar
• R Stratton, Diffusion of hot and cold electrons in semiconductor barriers, Phys Rev, vol 126, pp 2002–2014, 1962.
   Google Scholar
• K Rim, S Koester, M Hargrove, J Chu, P M Mooney, J Ott, T Kanarsky. P Ronsheim, M Ieong, A Grill & H S P Wong, Strained Si NMOSFETs for High Performance CMOS Technology, in IEEE VLSI Tech Symp Dig,, pp 59–60, 2001.
   Google Scholar
• C H Choi, J H Chun & R W Dutton, Electrothermal characteristics of strained-Si MOSFETs in high-current operation, IEEE Trans Electro 51 Dev, vol 51, pp 1928–1931, 2004.
   Google Scholar