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IETE Journal of Research Volume 54, 2008 - Issue 2
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Original Articles

Design of High Power Gated Crystal Oscillator for IFF Application

M ChandrashekarSolectron Centum Electronics Limited, 44 KHB Industrial Area, Yelahanka, New Township, Bangalore560064, India email: [email protected], [email protected], [email protected], [email protected]View further author information
,
Swarna SontineniSolectron Centum Electronics Limited, 44 KHB Industrial Area, Yelahanka, New Township, Bangalore560064, India email: [email protected], [email protected], [email protected], [email protected]View further author information
,
M B ReddySolectron Centum Electronics Limited, 44 KHB Industrial Area, Yelahanka, New Township, Bangalore560064, India email: [email protected], [email protected], [email protected], [email protected]View further author information
,
Vinod ChippalkattiSolectron Centum Electronics Limited, 44 KHB Industrial Area, Yelahanka, New Township, Bangalore560064, India email: [email protected], [email protected], [email protected], [email protected]View further author information
&
T V KumarSolectron Centum Electronics Limited, 44 KHB Industrial Area, Yelahanka, New Township, Bangalore560064, India email: [email protected], [email protected], [email protected], [email protected]
Pages 111-119 | Published online: 01 Sep 2014

References

  • Identification Friend or Foe (ISS systems) use PIN diodes, W.E. Doherty, Jr., Micro semi Watertown Spring/summer 1998. www.microsemi.com
  • HF Filter Design and Computer Simulation, Randall W. Rhea.
  • www.nxp.com/pip/BGA6489_l.html
  • www.datasheetcatalog.com/datasheets_pdf/B/F/G/5/BFG591.shtml
  • http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual”

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