On-Chip Meander Line N-Well Resistor with Shielded Ground Conductor for Q-Factor Improvement

REFERENCES

• O. Tession, B. I'Orgueilleuse, F. F. Barbier, and  Vimount, “Meander resistor,” U.S. Patent 8 258 916, Sep. 4, 2012.
   Google Scholar
• C. Wang and N. Y. Nam, “Optimization of NiCr thin film resistor on semi-insulating-GaAs substrate in advanced integrated passive device process,” IETE J. Res., Vol. 58, no. 4, pp. 279–83, Jul. 2012.
   Web of Science ®Google Scholar
• C. An, J. Xie, W. Peng, Y. C. Zeng, and X. L. Jin, “A 10-bit CMOS capacitive and resistive D/A converter integrated with self-adjusted reference circuit,” IETE J. Res., Vol. 59, no. 4, pp. 442–6, Jul. 2013.
   Web of Science ®Google Scholar
• M. R. Rudra, S. Gazabare, and R. J. Pieper, “Predicting limits for memristor on-off resistances consistent with linear drift model,” IETE J. Res., Vol. 60, no. 1, pp. 42–9, Jun. 2014.
   Web of Science ®Google Scholar
• R. Murji and M. J. Deen, “A scalable mender-line resistor model for silicon RFIC's,” IEEE Trans. Electron Devices, Vol. 49, no.1, pp. 187–90, Jan. 2002.
   Web of Science ®Google Scholar
• R. Murji and M. J. Deen, “Accurate modeling and parameter extraction for meander-line n-well resistors,” IEEE Trans. Electron Devices, Vol. 52, no 7, pp. 1364–9, Jul. 2005.
   Web of Science ®Google Scholar
• R. A. Pucel, Nores for Lectures Presented in Course on Microwave Circuit Design II – Nonlinear Circuits. Berkeley, CA: University California Press, 1984.
   Google Scholar
• H. Y. Yoo, R. K. Maharjan, and N. Y. Kim, “An X-band InGaP/GaAs hetero-junction bipolar transistor based microwave integrated circuit differential voltage controlled oscillator for satellite communications,” IETE J. Res., Vol. 56, no. 6, pp. 340–5, Nov. 2010.
   Web of Science ®Google Scholar
• C. H. Wang, J. Jin, and F. Yu, “A CMOS 2-11 GHz continuous variable gain UWB LNA,” IETE J. Res., Vol. 56, no. 6, pp. 367–72, Nov. 2010.
   Web of Science ®Google Scholar
• S. Nejadhasan, E. Abiri, R. Dastanian, and M. R. Salehi, “A low power and low LIR regulator for passive RFID tag in 0.18 μm CMOS technology,” IETE J. Res., Vol. 61, no. 4, pp. 372–81, Mar. 2015.
   Web of Science ®Google Scholar
• S. C. Du, W. B. Huang, C. H. Wang, H. X. Yin, and Z. W. Liang, “A single-chip highly efficient CMOS class-e power amplifier for WLAN applications,” IETE J. Res., Vol. 59, no. 2, pp. 762–7, Sep. 2013.
   Google Scholar
• H. Shaman, “Compact microstrip bandpass filter for radars and wireless communication,” IETE J. Res., Vol. 59, no. 5, pp. 496–9, Sep. 2013.
   Web of Science ®Google Scholar
• R. Bhattacharya, R. Gupta, A. Basu, K Rawat, and S. K. Koul, “A fully integrated dual-band CMOS power amplifier using a variable switched interstage matching network,” IETE J. Res., Vol. 60, no. 2, pp. 139–44, Jun. 2014.
   Web of Science ®Google Scholar
• F. Johannsmann, R. Henderson, G. Sommer, T. Myers, M. Petras, S. Korf, M. Miller, W. John, and H. Reichl, “Parameterized RF models of embedded resistor components using EM simulation in LTCC substrates,” Microw. Symp. Dig., Vol. 3, pp. 1545–8, May 2002.
   Google Scholar
• D. H. Elan and J. Y. Ahn, “Measurements of high Q On-chip inductor for wireless applications,” Sci. Technol. KORUS, Vol. 10, pp. 761–4, Sep. 2005.
   Google Scholar
• S. Saad, M. Mhiri, A. B. Hammadi, and K. Besbes “A new low-power, high-Q, wide tunable CMOS active inductor for RF applications,” IETE J. Res., Vol. 62, no. 2, pp. 265–73, Dec. 2015.
   Web of Science ®Google Scholar
• M. Pfost, H. Rein, and T. Holzwarth, “Modeling substrate effects in the design of high speed Si-bipolar IC's,” IEEE J. Solid-State Circuits, Vol. 31, no. 10, pp. 1493–501, Oct. 1996.
   Web of Science ®Google Scholar
• H. M. Hsu, J. Z. Chang, and H. C. Chien, “Coupling effect of on-chip inductor with variable metal width,” IEEE Microw. Wirel. Compon. Lett., Vol. 17, pp. 498–500, Jul. 2007.
   Web of Science ®Google Scholar
• A. K. Palit, K. K. Duganapalli, and W. Anheier, “Influence of resistive bridging fault on crosstalk coupling effects in on-chip aggressor-victim interconnects,” in IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, Arlington, VA, 2006, pp. 336–44.
   Google Scholar
• D. C. Pander, “EMP coupling to overhead transmission lines,” IETE Tech. Rev., Vol. 9, no. 6, pp. 419–32, Nov. 1992.
   Google Scholar
• H. Ramiah, J. Kanesan, and Z. A. Zulkifli , “Design of SIPC based LC-QVCO in 0.18 1/4m CMOS technology and the impact of coupling factor, K,” IETE J. Res., Vol. 58, no. 1, pp. 42–9, Jan. 2012.
   Web of Science ®Google Scholar
• T. Holtij, M. Schwarz, A. Kloes, and B.Iñíguez, “2D analytical calculation of the parasitic source/drain resistances in DG-MOSFETs using the conformal mapping technique,” IETE J. Res., Vol. 58, no. 3, pp. 205–13, Jun. 2012.
   Web of Science ®Google Scholar
• H. M. Liu, Z. B. Wang, and S. J. Fang, “Trans directional coupler with capacitor shunted ground defected coupled CPWs and inductor loaded ACPWs for weak coupling applications,”J. Electromagnet. Waves Appl., Vol. 27, no. 1, pp. 104–16, Jan. 2013.
   Web of Science ®Google Scholar
• W. Zhang, J. Mao, and X. Sun, “Patch antenna array embedded on a high impedance ground plane,” J. Electromagnet. Waves Appl., Vol. 19, no. 15, pp. 2007–14, Jan. 2005.
   Web of Science ®Google Scholar
• C. P. Yue and S. S Wong,“ On-chip spiral inductors with patterned ground shields for Si-based RF IC's,” IEEE J. Solid-State Circuits, Vol. 33, no. 5, pp. 743–52, May 1998.
   Web of Science ®Google Scholar
• P. N. Lagoia Fonseca and L. C. Kretly, “High q-factor monolithic inductor for RF devices using double ground shield,” in Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, Cancun, Mexico, Jun. 2008, pp. 1–4.
   Google Scholar
• R. Svitek, A. S. Klein, M. Clifford, and S. Raman, “Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology,” in IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Atlanta, GA, Sep. 2004, pp. 1–4.
   Google Scholar
• C. C. Chen, L. C. Wang, and S. A. Ho, “Comparative layout study of stacked CMOS synthetic quasi-TEM lines separated by the meshed ground shield and its application to 180 hybrid design,” IEEE Microw. Wirel. Compon. Lett., Vol. 21, no. 6, pp. 289–91, Jun. 2011.
   Web of Science ®Google Scholar
• G. G. Johnstone and J. H. B. Deane, “Calculation of coupling gap and fringing capacitances in coupled rectangular bars between ground planes,” Int. J. Electron., Vol. 78, no. 4, pp. 729–41, Nov. 1994.
   Web of Science ®Google Scholar
• R. V. Staden, K. Jackman, C. J. Fourie, and P. Febvre, “Influence of the superconducting ground plane on the performance of RSQF cells,” IEEE Trans. Appl. Superconduct., unpublished.
   Google Scholar
• Sonnet Software, “Sonnet high frequency electromagnetic software reference”. [ Online]. Available: https://www.sonnetsoftware.com/resources.
   Google Scholar
• K. Murata, T. Hosaka, and Y. Sugimoto, “Effect of a ground shield of a silicon on-chip spiral inductor,” in Microwave Conference, Asia-Pacific, Sydney, Australia, Dec. 2000, pp. 177–80.
   Google Scholar
• S. J. Han, J. H. Jeong, K. J. Son, and Y. Yun, “A study on basic RF characteristics of transmission lines employing various types of ground structures on silicon substrate for a decision of optimal periodic ground structure,” in Proceedings of the Asia-Pacific Microwave Conference, Seoul, South Korea, Nov. 2013, pp. 414–6.
   Google Scholar
• X. Sun, G. Carchon, Y. Kita, K. Chiba, T. Tani, and W. De Raedt, “Experimental analysis of above-IC inductor performance with different patterned ground shield configurations and dummy metals,” in 36th European Microwave Conference, Manchester, Sep. 2006, pp. 40–43.
   Google Scholar
• K. Suzuki, “Parasitic capacitance of submicrometer MOSFETs,” IEEE Trans. Electron. Devices, Vol. 46, no. 9, pp. 1895–900, Sep. 1999.
   Web of Science ®Google Scholar
• I. J. Bahl, Lumped Elements for RF and Microwave Circuits. Artech House Microwave Library, 2003.
   Google Scholar
• M. Sucher, “Handbook of Microwave and Measurements,” in Proceedings of the IEEE, Vol. 53. Brooklyn, NY: Polytechnic Press of the Polytechnic Institute of Brooklyn, 1963.
   Google Scholar
• M. B. Steer, Microwave and RF Design: A Systems Approach. Herndon, VA: SciTech Publishing Incorporated, 2010.
   Google Scholar
• D. M. Pozar, Microwave Engineering. 4th ed. Hoboken, NJ: Wiley, 2005.
   Google Scholar
• P. N. Lagoia Fonseca and L. C. Kretly, “RF integrated inductor: Improving Q-factor with double ground shield for BiCMOS technology,” in International Conference on Microwave and Millimeter Wave Technology, ICMMT, Nanjing, China, Vol. 2, Apr. 2008, pp. 580–3.
   Google Scholar
• K. Schimpf, B. Benna, and D. Proetel, “A new approach to characterize substrate losses of On-Chip inductors,” in International Conference on Microelectronic Test Structures (ICMTS), Kobe, Japan, Mar. 2001, pp. 115–8.
   Google Scholar
• M. Yao, X. L. Zhang, and C. Y. Zhao, “Impact of skin effect, resistive and dielectric losses on the input voltage waveforms of current estimation for ULSI interconnects,” in IEEE International Conference on Communication, Circuits and Systems (ICCCAS), Chengdu, China, Vol. 1, Nov. 2013, pp. 413–6.
   Google Scholar
• S. Mei and Y. Ismail, “Modeling skin effect with reduced decoupled R-L circuits,” in International Symposium Circuits and Systems (ISCAS), Bangkok, Thailand, Vol. 4, Mar. 2003, pp. 588–91.
   Google Scholar
• S. Z. Mei and Y. I. Ismail, “Modeling skin and proximity effects with reduced realizable RL circuits,”IEEE Trans. VLSI Syst., Vol. 12, pp. 437–47, Apr. 2004.
   Web of Science ®Google Scholar
• A. F. Horn III, J. W. Reynolds, P. A. LaFrance, and J. C. Rautio, “Effect of conductor profile on the insertion loss, phase constant and dispersion in thin high frequency transmission lines,” in Design Conference, Rogers Corporation, USA, May 2010.
   Google Scholar
• C. Tu, J. F. Bao, and Y. J. Du, “An investigation into the effect of the bias line on the insertion loss of RF-MEMS tunable filter,” in Proceedings of the Microwave Conference (CJMW), Hangzhou, China, May 2011, pp. 1–4.
   Google Scholar
• D. N. P. Thalakotuna, L. Matekovits, K. P. Esselle and M. Heimlich, “Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band,” in IEEE International Symposium on Antennas and Propagation (APSURSI), Spokane, WA, Aug. 2011, pp. 1808–11.
   Google Scholar
• V. Alessandrini, H. Fanchiotti, C. A. Garcia Canal, and H. Vucetich, “The skin effect in multiconductor systems,” Int. J. Electron., Vol. 40, pp. 57–63, Feb. 2007.
   Google Scholar
• P. K. Mahanta, P. Adhikari, and K. A. Rocky, “Skin effect analysis for carob nano material based interconnects at high frequency,” in IEEE International Conference on Informatics, Electronics & Vision (ICIEV), Dhaka, Bangladesh, Aug. 2013, pp. 1–6.
   Google Scholar
• K. Blattenberger, RF Café, 1996-2016. Available: http://www.rfcafe.com/references/electrical/skin-depth.htm.
   Google Scholar