94
Views
0
CrossRef citations to date
0
Altmetric
Articles

Numerical Modelling of Interconnect Electromigration Under Non-DC Stressing Conditions

, , &

REFERENCES

  • K. N. Tu, “Recent advances on electromigration in very-large-scale-integration of interconnects,” J. Appl. Phys., Vol. 94, pp. 5451–73, Nov. 2003. doi: 10.1063/1.1611263
  • T. Jiang, N. W. Cheung, and C. Hu, “Metal electromigration damage healing under bidirectional current stress,” IEEE Electron. Dev. L., Vol. 14, pp. 554–6, Dec. 1993. doi: 10.1109/55.260787
  • K. D. Lee, “Electromigration recovery and short lead effect under bipolar- and unipolar-pulse current,” IEEE Int. Reliab. Phys. Sym., pp. 6B-3, 2012.
  • R. Shaviv, G. J. Harm, S. Kumari, R. R. Keller, and D. T. Read, “Electromigration of Cu interconnects under AC and DC test conditions,” Microelectron. Eng., Vol. 92, pp. 111–4, Apr. 2012. doi: 10.1016/j.mee.2011.05.014
  • M. K. Lim, V. A. Chouliaras, C. L. Gan, and V. M. Dwyer, “Bidirectional electromigration failure,” Microelectron. Reliab., Vol. 53, pp. 1261–5, Nov. 2013. doi: 10.1016/j.microrel.2013.07.017
  • M. H. Lin and A. S. Oates, “AC and pulsed-DC stress electromigration failure mechanisms in Cu interconnects,” in IEEE International Interconnect Technology Conference, Kyoto, 2013, pp. 1–3.
  • R. R. Keller, N. Barbosa, R. H. Geiss, and D. T. Read, “An electrical method for measuring fatigue and tensile properties of thin films on substrates,” Key Eng. Mat., Vol. 345–346, pp. 1115–20, 2007. doi: 10.4028/www.scientific.net/KEM.345-346.1115
  • A. Heryanto, et al., “The effect of stress migration on electromigration in dual damascene copper interconnects,” J. Appl. Phys., Vol. 109, pp. 013716, Jan. 2011. doi: 10.1063/1.3531393
  • B. K. Liew, N. W. Cheung, and C. Hu, “Electromigration interconnect lifetime under AC and pulse DC stress,” IEEE Int. Reliab. Phys. Sym., pp. 215–9, Apr. 1989.
  • H. W. Yao, K. Y. Yiang, P. Justison, M. Rayasam, O. Aubel, and J. Poppe, “Stress migration model for Cu interconnect reliability analysis,” J. Appl. Phys., Vol. 110, pp. 073504, 2011. doi: 10.1063/1.3644972
  • Z. Y. Wu, Y. T. Yang, C. C. Chai, Y. J. Li, J. Y. Wang, B. Li, and J. Liu, “Structure-dependent behavior of stress-induced voiding in Cu interconnects,” Thin Solid Films, Vol. 518, pp. 3778–81, Oct. 2010. doi: 10.1016/j.tsf.2009.12.093
  • J. W. McPherson and C. F. Dunn, “A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si(1%) metallization,” J. Vac. Sci. Technol. B, Vol. 5, pp. 1321–25, Sep. 1987. doi: 10.1116/1.583609
  • J. R. Black, “Electromigration – a brief survey and some recent results,” IEEE Trans. Electron. Dev., Vol. 16, pp. 338–47, Apr. 1969. doi: 10.1109/T-ED.1969.16754
  • C. S. Hau-Riege, “An introduction to Cu electromigration,” Microelectron. Reliab., Vol. 44, pp. 195–205, Feb. 2004. doi: 10.1016/j.microrel.2003.10.020
  • K. D. Lee, E. T. Ogawa, S. Yoon, X. Lu, and P. S. Ho, “Electromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k interconnects,” Appl. Phys. Lett., Vol. 82, pp. 2032–34, Mar. 2003. doi: 10.1063/1.1564294
  • C. D. Hartfield, E. T. Ogawa, Y. J. Park, T. C. Chiu, and H. Guo, “Interface reliability assessments for copper/low-k products,” IEEE Trans. Dev. Mater. Reliab., Vol. 4, pp. 129–41, Jun. 2004. doi: 10.1109/TDMR.2004.831990
  • Z. Wu, Y. Yang, C. Chai, Y. Li, J Wang, J. Liu, and B. Liu, “Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects,” Microelectron. Reliab., Vol. 48, pp. 578–83, Apr. 2008. doi: 10.1016/j.microrel.2007.12.001
  • H. A. Schafft, “Thermal analysis of electromigration test structures,” IEEE Trans. Electron. Dev., Vol. 34, pp. 664–72, Mar. 1987. doi: 10.1109/T-ED.1987.22978
  • Z. Li, G. Wu, Y. Wang, Z. Li, and Y. Sun, “Numerical calculation of electromigration under pulse current with Joule heating,” IEEE Trans. Electron. Dev., Vol. 46, pp. 70–7, Jan. 1999. doi: 10.1109/16.737443
  • T. Jiang, N. W. Cheung, and C. Hu, “An electromigration failure model for interconnects under pulsed and bidirectional current stressing,” IEEE Trans. Electron. Dev., Vol. 41, pp. 539–45, Apr. 1994. doi: 10.1109/16.278507
  • B. K. Liew, N. W. Cheung, and C. Hu, “Projecting interconnect electromigration lifetime for arbitrary current waveforms,” IEEE Trans. Electron. Dev., Vol. 37, pp. 1343–51, May 1990. doi: 10.1109/16.108197

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.