A Low Power CMOS UWB LNA with Dual-band Notch Filter Using Forward Body Biasing

References

• S. Pandey and J. Singh, “A 0.6 V, low-power and high-gain ultra-wideband low-noise amplifier with forward-body-bias technique for low-voltage operations,” IET Microwaves Antennas Propag., Vol. 9, no. 8, pp. 728–34, 2015.
   Web of Science ®Google Scholar
• S. Pandey and J. Singh, “A low power and high gain CMOS LNA for UWB applications in 90 nm CMOS process,” Elsevier Microelectron. J., Vol. 46, no. 5, pp. 390–7, May 2015. doi: 10.1016/j.mejo.2015.01.002
   Web of Science ®Google Scholar
• “UWB parameters for EMC coexistence with legacy systems.” Defense Advanced Research Projects Agency (DARPA), Jun. 2003.
   Google Scholar
• T. H. Huang, and J. L. Wang, “New frequency plan and reconfigurable 6.6/7.128 GHz CMOS quadrature VCO for MB-OFDM UWB application,” in 2007 IEEE/MTTS International Microwave Symposium, Honolulu, HI, USA, Jun. 2007, pp. 843–6.
   Google Scholar
• C. Kim, M. Kang, P. Anh, H. Kim, and S. Lee, “An UWB CMOS LNA for 3–5 GHz UWB system,” IEEE J. Solid-State Circuits, Vol. 40, no. 2, pp. 544–7, Feb. 2005. doi: 10.1109/JSSC.2004.840951
   Web of Science ®Google Scholar
• B. Razavi, Design of Analog CMOS Integrated Circuits. Boston: McGrawHill, 2001, pp. 192–256.
   Google Scholar
• A. Bevilacqua and A. M. Niknejad, “An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receiver,” IEEE J. Solid State Circuit, Vol. 39, no. 12, pp. 2259–68, Dec. 2004. doi: 10.1109/JSSC.2004.836338
   Web of Science ®Google Scholar
• Ch. Liang, P. Rao, T. Huang, and Sh. Chung, “Analysis and design of two low-power ultra-wideband CMOS low-noise amplifiers with out-band rejection,” IEEE Trans. Micro Wave Theory Tech., Vol. 58, no. 2, pp. 277–86, Feb. 2010. doi: 10.1109/TMTT.2009.2037855
   Web of Science ®Google Scholar
• A. Vallese, A. Bevilacqua, C. Sandner, M. Tiebout, A. Gerosa, and A. Neviani, “Analysis and design of an integrated notch filter for the rejection of interference in UWB systems,” IEEE J. Solid-State Circuits, Vol. 44, no. 2, pp. 331–43, Feb. 2009. doi: 10.1109/JSSC.2008.2010984
   Web of Science ®Google Scholar
• M. Yargholi and A. P. Tarighat, “Resistive feedback LNA with dual band notch filter for suppressing WLAN signals in UWB receivers,” in IEEE International Conference on UltraWideband, NCC, Kharagpur, India, 2012, pp. 1–4.
   Google Scholar
• A. Bevilacqua, A. Maniero. A. Gerosa, and A. Neviani, “An integrated solution for suppressing WLAN signals in UWB receivers,” IEEE Trans. Circuits Syst. I, Reg. Papers, Vol. 54, no. 8, pp. 1617–25, Aug. 2007. doi: 10.1109/TCSI.2007.902458
   Web of Science ®Google Scholar
• A. Srivastava and D. Govindarajan, “A fast ALU design in CMOS for low voltage operation,” J. VLSI, pp. 315–27, Dec. 2002. doi: 10.1080/10655140290011122
   Web of Science ®Google Scholar
• Gh. R. Karimi and S. B. Sedaghat, “Ultra low voltage, ultra low power LNA for 2 GHz applications,” Int. J. Electron. Commun, Vol. 66, pp. 18–22, 2012. doi: 10.1016/j.aeue.2011.04.008
   Google Scholar
• H. Rastegar, S. Saryazdi and A. Hakimi, “A low power and high linearity UWB low noise amplifier (LNA) for 3.1-10.6 GHz wireless applications in 0.13µm CMOS process,” Microelectron. J., Vol. 44, pp. 201–9, 2013. doi: 10.1016/j.mejo.2013.01.004
   Web of Science ®Google Scholar
• A. Slimane, M. Trabelsi, and M. T. Belaroussi, “A 0.9-V, 7-mW UWB LNA for 3.1-10.6-GHz wireless applications in 0.18µm CMOS technology,” Microelectron. J., Vol. 42, pp. 1263–8, 2011. doi: 10.1016/j.mejo.2011.08.008
   Web of Science ®Google Scholar
• S. K. Tang, K. P. Pun, C. S. Choy, C. F. Chan, and K. N. Leung, “A fully differential band-selective low-noise amplifier for MB-OFDM UWB receivers,” IEEE Trans. Circuits Syst., Vol. 55, no. 7, pp. 653–7, Jul. 2008.
   Google Scholar
• Y. Lu, K. S. Yeo, A. Cabuc, J. Ma, M. Do, and Z. Lu, “A novel CMOS low-noise amplifier design for 3.1 to 10.6 GHz ultra-wideband wireless receivers,” IEEE Trans. Circuits Syst. 1, Vol. 53, no. 8, pp. 1683–92, Aug. 2006. doi: 10.1109/TCSI.2006.879059
   Web of Science ®Google Scholar
• H.-Y. Yang, Y.-S. Lin, and C.-C. Chen, “2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation,” Electron. Lett., Vol. 44, no. 8, pp. 528–9, Apr. 2008. doi: 10.1049/el:20083425
   Web of Science ®Google Scholar
• Y. Gao, Y. J. Zheng, and B. L. Ooi, “0.18-µm CMOS dual-band UWB LNA with interference rejection,” Electron. Lett., Vol. 43, no. 20, pp. 1096–8, Sep. 2007. doi: 10.1049/el:20072054
   Web of Science ®Google Scholar
• J. Adhyaru, “Design and analysis of ultra wide band CMOS LNA,” M.Sc. thesis, San Jose State University, CA, 2007.
   Google Scholar
• A. Nam-Jin, “Low-power 3.1-10.6 GHz ultra-wideband CMOS low-noise amplifier with common-gate input stage,” Curr. Appl. Phys. Vol. 11, pp. 87–92, 2007, IEEE international workshop on RFIT 007, 2011.
   Google Scholar
• K. Shaeffer Derek and T. H. Lee, “A 1.5 V, 1.5vGHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, Vol. 32, pp. 745–59, 1997. doi: 10.1109/4.568846
   Web of Science ®Google Scholar
• M. Yargholi and A. Nabavi, “A highly linear Gilbert cell OTA with multiple gated transistors for non-coherent UWB receivers,” IEICE Electron. Express, Vol. 6, no. 11, pp. 756–62, Jun. 2009. doi: 10.1587/elex.6.756
   Web of Science ®Google Scholar
• A. Van der ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986.
   Google Scholar
• S. Toofan, A. R. Rahmati, A. Abrishamifar, and G. Roientan Lahiji, “A low-power and high-gain fully integrated CMOS LNA,” Microelectron. J., Vol. 38, pp. 1150–5, 2007. doi: 10.1016/j.mejo.2007.10.001
   Web of Science ®Google Scholar