Modeling and Fabrication Aspects of Cu- and Carbon Nanotube-Based Through-Silicon Vias

References

• International Technology Roadmap for Semiconductors, 2011 [online]. http://public.itrs.net.
   Google Scholar
• K. Banerjee, S. J. Souri, P. Kapur, and K. C. Saraswat, “3-D ics: A novel chip design for improving deep-sub micrometer interconnect performance and systems-on-chip integration,”Proc. IEEE, Vol. 89, no. 5, pp. 602–633, May 2001. doi: 10.1109/5.929647
   Web of Science ®Google Scholar
• Z. Xuand and J. –Q. Lu, “High-speed design and broadband modeling of through-strata-vias (TSVs) in 3D integration,” IEEE Trans. Comp Pack Manuf Technol, Vol. 1, no. 2, pp. 154–162, February 2011. doi: 10.1109/TCPMT.2010.2101693
   Web of Science ®Google Scholar
• J. Zheng, Z. Zhang, Y. Chen, and J. Shi, “3D stacked package technology and its application prospects”, Proc. IEEE Int. conf. New trends in information and service science (NISS ‘09), Beijing, pp. 528–533, Jul. 2009.
   Google Scholar
• P. Christie and D. Stroobandt, “The interpretation and application of rent’s rule,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst, vol. 8, no. 6, pp. 639–648, Dec. 2000. doi: 10.1109/92.902258
   Web of Science ®Google Scholar
• Tanu Goyal, Manoj Kumar Majumder, and Brajesh Kumar Kaushik, “Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV,” J Semiconduct, Vol. 36, no. 6, June 2015.
   Web of Science ®Google Scholar
• Yi-An Hsu, Chi-Hsuan Cheng, Yi- Chang Lu, and Tzong-Lin Wu, “An accurate and fast subsrate noise prediction method with octagonal TSV model for 3D ICs,” IEEE Trans. Electromagnet Compab, Vol. 99, issue, pp. 1–9, February 2017.
   Google Scholar
• H. Li, C. Xu, N. Srivastava, and K. Banerjee, “Carbon nanomaterials for next-generation interconnects and passives: physics, status, and prospects,”IEEE Trans. Electron Devices, Vol. 56, no. 9, pp. 1799–1821, Sep. 2009. doi: 10.1109/TED.2009.2026524
   Web of Science ®Google Scholar
• J. –P. Cui, W. –S. Zhao, W. –Y. Yin, and J. Hu, “Signal transmission analysis of multilayer graphene nano-ribbon (MLGNR) interconnects,” IEEE Trans. Electromag.Compat., Vol. 54, no. 1, pp. 126–132, Feb. 2012. doi: 10.1109/TEMC.2011.2172947
   Web of Science ®Google Scholar
• L. L. W. Leung and K. J. Chen, “Microwave characterization and modeling of high aspect ratio through-wafer interconnect vias in silicon substrates,” IEEE Trans. Microwave Theory Techniques, Vol. 53, no. 8, pp. 2472–2480, Aug. 2005. doi: 10.1109/TMTT.2005.852782
   Web of Science ®Google Scholar
• C. Ryu, J. Lee, H. Lee, K. Lee, T. Oh, and J. Kim, “High frequency electrical model of through wafer via for 3-D stacked chip packaging,”Proc. IEEE Int. Conf. Electronics System Integration Technology, Dresden, Germany, pp. 215–220, 2006.
   Google Scholar
• P. A. Thadesar and M. S. Bakir, “Novel photodefined polymer-embedded vias For silicon interposers,” J. Micromech. Microeng., Vol. 23, no. 3, pp. 035003-1–035003-6, Mar. 2013. doi: 10.1088/0960-1317/23/3/035003
   Web of Science ®Google Scholar
• C. Bermond, L. Cadix, A. Farcy, T. Lacrevaz, P. Leduc, and B. Flechet, “High frequency characterization and modeling of high density TSV in 3-D integrated circuits,” Proc.13th IEEE Workshop Signal Propagation Interconnects, Strasbourg, France, pp. 1–4,May 12–15, 2009.
   Google Scholar
• K. J. Han, M. Swaminathan, and T. Bandyopadhyay, “Electromagnetic modeling of through-silicon via (tsv) interconnections using cylindrical modal basis functions,” IEEE Trans. Adv. Pack., Vol. 33, no. 4, pp. 804–817, Nov. 2010. doi: 10.1109/TADVP.2010.2050769
   Google Scholar
• D. H. Kim, S. Mukhopadhyay, and S. K. Lim,“Fast and accurate analytical modeling of through-silicon-via capacitive coupling,” IEEE Trans.Comp Packag Manuf Technol, Vol. 1, no. 2, pp. 168–180, Feb. 2011. doi: 10.1109/TCPMT.2010.2101910
   Web of Science ®Google Scholar
• G. Katti, M. Stucchi, K. D. Meyer, and W. Dehaene, “Electrical modeling and characterization of through silicon via for three-dimensional ICs,” IEEE Trans. Electron Devices, Vol. 57, no. 1, pp. 256–262, Jan. 2010. doi: 10.1109/TED.2009.2034508
   Web of Science ®Google Scholar
• J. Kim, J. S. Pak, J. Cho, E. Song, J. Cho, H. Kim, T. Song, J. Lee, H. Lee, K. Park, S. Yang, M. –S. Suh, K. –Y. Byun, and J. Kim, “High-frequency scalable electrical model and analysis of through silicon via (TSV),” IEEE Trans. Comp Packag Manuf Technol, Vol. 1, no. 2, pp. 181–195, Feb 2011. doi: 10.1109/TCPMT.2010.2101890
   Web of Science ®Google Scholar
• T. –Y. Cheng, C. –D. Wang, Y. –P. Chiou, and T. –L. Wu, “A new model for through-silicon vias on 3-D IC using conformal mapping method,” IEEE Microw Wirel Comp Lett., Vol. 22, no. 6, pp. 303–305, June 2012. doi: 10.1109/LMWC.2012.2195776
   Web of Science ®Google Scholar
• D. –C. Yang, J. Xie, M. Swaminathan, X. –C. Wei, and E. –P. Li, “A rigorous model for through-silicon vias with ohmic contact in silicon interposer,” IEEE Microw Wirel Comp Lett., Vol. 23, no. 8, pp. 1–3, 2013. doi: 10.1109/LMWC.2013.2270459
   Web of Science ®Google Scholar
• P.A. Thadesar and M. S. Bakir, “Novel photo-defined polymer-enhanced through-silicon vias for silicon interposers,” IEEE Trans. Comp. Pack. Manuf. Technol, Vol. 3, no. 7, pp. 1130–1137, Jul. 2013. doi: 10.1109/TCPMT.2013.2261122
   Web of Science ®Google Scholar
• J. –P. Cui, W. –S. Zhao, W. –Y. Yin, and J. Hu, “Signal transmission analysis of multilayer graphene nano-ribbon (MLGNR) interconnects,”IEEE Trans. Electromagn. Compatibil., Vol. 54, no. 1, pp. 126–132, Feb. 2012. doi: 10.1109/TEMC.2011.2172947
   Web of Science ®Google Scholar
• A. Alam, M. K. Majumder, A. Kumari, V. R. Kumar, and B. K. Kaushik, “Performance analysis of single- and multi-walled carbon nanotube based through silicon vias,” Proc. 65th Electron. Compon. Technol. Conf. (ECTC), pp. 1834–1839, May 2015.
   Google Scholar
• A. Naeemi and J. D. Meindl, “Design and performance modeling for single-walled carbon nanotubes as local, semiglobal, and global interconnects in gigascale integrated systems,” IEEE Trans. Electron Devices, Vol. 54, no. 1, pp. 26–37, Jan. 2007. doi: 10.1109/TED.2006.887210
   Web of Science ®Google Scholar
• M. K. Majumder, N. D. Pandya, B. K. Kaushik, and S. K. Manhas, “Analysis of MWCNT and bundled SWCNT interconnects: impact on crosstalk and area,” IEEE Electron Device Lett., Vol. 33, no. 8, pp. 1180–1182, Aug. 2012. doi: 10.1109/LED.2012.2200872
   Web of Science ®Google Scholar
• C. Xu, H. Li, R. Suaya, and K. Banerjee, “Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs,” IEEE Trans. Electron Devices, Vol. 57, no. 12, pp. 3405–3417, Dec. 2010. doi: 10.1109/TED.2010.2076382
   Web of Science ®Google Scholar
• S. Kannan, B. Kim, A. Gupta, S. –H. Noh, and L. Li, “Characterization of high performance CNT-based TSV for high-frequency RF applications,” Adv. Mat. Res., Vol. 1, no. 1, pp. 37–49, Feb. 2012. doi: 10.12989/amr.2012.1.1.037
   Google Scholar
• W. –S. Zhao, W. –Y. Yin, and Y. –X. Guo, “Electromagnetic compatibility-oriented study on through silicon single-walled carbon nanotube bundle via (TS-SWCNTBV) arrays,” IEEE Trans. Electromagn. Compatibil., Vol. 54, no. 1, pp. 149–157, Feb 2012. doi: 10.1109/TEMC.2011.2167336
   Web of Science ®Google Scholar
• B. Safieldeen, H. Mostafa, H. Abdelhamid, and Y. Ismail, “A comparative evaluation of single-walled carbon nanotubes and copper in interconnects and through-silicon vias,” IEEE International Conference on Electronics Circuits and Systems (ICECS), 2015.
   Google Scholar
• J. Zheng, Z. –Q.Su, G. –Y. Wang, M. Li, W. –S. Zhao, and G. Wang, “Circuit modeling of Cu/CNT composite through-silicon vias (TSV)” Proc. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Suzhou, China, pp. 1–3, 2015.
   Google Scholar
• B. K. Kaushik, M. K. Majumder, and V. R. Kumar, “Carbon nanotube based 3-D interconnects – A reality or a distant dream,” IEEE Circuits Syst. Mag., Vol. 14, no. 4, pp. 16–35, November, 2014. doi: 10.1109/MCAS.2014.2360787
   Web of Science ®Google Scholar